Abstract: The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

Abstract: A modified high-brightness flat lamp structure comprises a reflecting plate, a plurality of UV light sources and a transparent substrate. The reflecting plate has titanium dioxide and macromolecular polymer coated thereon. The transparent substrate has macromolecular polymer and fluorescent powder coated thereon. The UV light sources are arranged in the reflecting plate. The transparent substrate covers the reflecting plate. UV light emitted by the UV light sources and reflected by the reflecting plate will thus excite the fluorescent powder layer to radiate high-brightness visible light.