Patents by Inventor Shen-Li Chen

Shen-Li Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for manufacturing low power high efficiency non-volatile erasable programmable memory cell structure
    Patent number: 6331463
    Abstract: A low power high efficiency non-volatile erasable programmable memory cell structure has a characteristic, distributed, floating gate structure comprising an assembly of independent crystalline silicon crystals. Each crystalline silicon crystal has a diameter of roughly between 10 Å and 100 Å and is separated from the other crystals by a distance greater than 50 Å.
    Type: Grant
    Filed: January 18, 1999
    Date of Patent: December 18, 2001
    Assignee: United Microelectronics Corp.
    Inventor: Shen-Li Chen
  • Method of measuring the threshold voltage of metal-oxide semiconductor field-effect transistors
    Patent number: 5838164
    Abstract: A method for accurately measuring the threshold voltage of a MOSFET device. A variable DC voltage is connected between the drain and the source, and the source and the substrate are grounded. The drain-to-source voltage is varied among a first predetermined number of levels in a first range that approaches zero volts. The value of one K parameter for each level of the drain-to-source voltage is obtained. A curve representing the K parameter versus drain-to-source voltage characteristic is plotted. The intercept of the curve with the K parameter axis, by linear extrapolation of the curve is obtained, the intercept represents the threshold voltage of the MOSFET device.
    Type: Grant
    Filed: August 16, 1996
    Date of Patent: November 17, 1998
    Assignee: United Microelectronics Corporation
    Inventor: Shen-Li Chen