Abstract: A system and method for chemical dry etching system. The present invention provides a method for performing an etching process for manufacture of integrated circuits. The method includes providing a semiconductor wafer. The method also includes the step of maintaining the semiconductor wafer in a predetermined environment. The method includes subjecting a portion of the layer to a plasma environment. The plasma environment includes one or more plasma species. For example, the plasma species are used to perform etching. The method also includes monitoring a pressure condition within a first transport device using a sensing device. The sensing device is spatially configured between a valve and a pumping device. The valve is coupled to a second exhaust coupled to the plasma chamber. The method additionally includes determining if the pressure condition within the first exhaust is within a predetermined condition.