Patents by Inventor Shen Zhu

Shen Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Targeted DNA demethylation method, fusion protein and application thereof preliminary class
    Patent number: 11965187
    Abstract: A targeted DNA demethylation method (Mini-CRISD) and a fusion protein used in the method are provided. The Mini-CRISD method can targets delivery of demethylation activity through engineered miniature dCjCas9 to deliver engineered miniature ROS1 demethylation effector to specific DNA sequences and/or specific genomic locations (such as CpG islands) to achieve targeted demethylation of specific DNA.
    Type: Grant
    Filed: January 17, 2023
    Date of Patent: April 23, 2024
    Assignees: GUANGZHOU MEDICAL UNIVERSITY, GMU NEW DRUG DEVELOPMENT CO., LTD.
    Inventors: Xi-Yong Yu, Yu-Guang Zhu, Ao Shen, Ling-Min Zhang, Ji-Shuo Chang
  • URINE QUANTIFYING BED PAD
    Publication number: 20230141612
    Abstract: An absorbent pad including a top layer. The top layer including a first sheet, the first sheet including an outward face and an inward face, wherein the first sheet comprises a wicking material, the first sheet further including a volume approximation grid having a plurality of fluid volume estimation regions. The top layer including a second sheet, the second sheet comprising an absorbent material, the second sheet attached to the inward face of the first sheet. The absorbent pad including a bottom layer including an outward face and an inward face, the inward face of the bottom layer attached to the second sheet. The absorbent pad including a visual fluid indicator disposed on at least a portion of the top layer or the bottom layer.
    Type: Application
    Filed: November 7, 2022
    Publication date: May 11, 2023
    Inventors: Bianca De, Ian Christman, Jillian Gallagher, Brian Kolich, Yajnesh Vedanaparti, Toby Shen Zhu
  • Process for preparing p-n junctions having a p-type ZnO film
    Publication number: 20070022947
    Abstract: A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3.
    Type: Application
    Filed: March 28, 2006
    Publication date: February 1, 2007
    Applicant: The Curators of the University of Missouri
    Inventors: Henry White, Shen Zhu, Yungryel Ryu
  • Process for preparing p-n junctions having a p-type ZnO film
    Patent number: 7033435
    Abstract: A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3.
    Type: Grant
    Filed: July 8, 2003
    Date of Patent: April 25, 2006
    Assignee: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Process for preparing p-n junctions having a p-type ZnO film
    Publication number: 20040094085
    Abstract: A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3.
    Type: Application
    Filed: July 8, 2003
    Publication date: May 20, 2004
    Applicant: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Zinc oxide films containing p-type dopant and process for preparing same
    Patent number: 6610141
    Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
    Type: Grant
    Filed: November 15, 2001
    Date of Patent: August 26, 2003
    Assignee: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Process for preparing zinc oxide films containing p-type dopant
    Patent number: 6475825
    Abstract: A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
    Type: Grant
    Filed: April 26, 2001
    Date of Patent: November 5, 2002
    Assignee: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Zinc oxide films containing P-type dopant and process for preparing same
    Patent number: 6410162
    Abstract: A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
    Type: Grant
    Filed: July 30, 1999
    Date of Patent: June 25, 2002
    Assignee: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Zinc oxide films containing p-type dopant and process for preparing same
    Publication number: 20020055003
    Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
    Type: Application
    Filed: November 15, 2001
    Publication date: May 9, 2002
    Applicant: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Zinc oxide films containing p-type dopant and process for preparing same
    Publication number: 20020031680
    Abstract: A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
    Type: Application
    Filed: April 26, 2001
    Publication date: March 14, 2002
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Oxide films and process for preparing same
    Patent number: 6342313
    Abstract: A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
    Type: Grant
    Filed: November 12, 1999
    Date of Patent: January 29, 2002
    Assignee: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu
  • Zinc oxide films containing P-type dopant and process for preparing same
    Patent number: 6291085
    Abstract: A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 1015 acceptors/cm3, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm2/Vs.
    Type: Grant
    Filed: August 3, 1998
    Date of Patent: September 18, 2001
    Assignee: The Curators of the University of Missouri
    Inventors: Henry W. White, Shen Zhu, Yungryel Ryu