Patents by Inventor Sheng C. Lai

Sheng C. Lai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for laser annealing to form an epitaxial growth layer
    Patent number: 7880115
    Abstract: A method for forming an epitaxial layer in a capacitor over interconnect structure, includes selecting a laser having a suitable wavelength for absorption at a seeding layer/annealing layer interface of the capacitor over interconnect structure, and directing laser energy from the selected laser at the capacitor over interconnect structure. The laser energy anneals a feature of the capacitor over interconnect structure to form an epitaxial layer. The annealing is accomplished at a temperature below about 450° C. The selected laser can be an excimer laser using a pulse extender. The capacitor over interconnect structure can be a ferroelectric capacitor formed over a conventional CMOS structure.
    Type: Grant
    Filed: June 22, 2007
    Date of Patent: February 1, 2011
    Assignee: Macronix International Co., Ltd.
    Inventors: Sheng C. Lai, Ruichen Liu
  • Method of laser annealing to form an epitaxial growth layer
    Patent number: 7247503
    Abstract: A method for forming an epitaxial layer in a capacitor over interconnect structure, includes selecting a laser having a suitable wavelength for absorption at a seeding layer/annealing layer interface of the capacitor over interconnect structure, and directing laser energy from the selected laser at the capacitor over interconnect structure. The laser energy anneals a feature of the capacitor over interconnect structure to form an epitaxial layer. The annealing is accomplished at a temperature below about 450° C. The selected laser can be an excimer laser using a pulse extender. The capacitor over interconnect structure can be a ferroelectric capacitor formed over a conventional CMOS structure.
    Type: Grant
    Filed: March 4, 2004
    Date of Patent: July 24, 2007
    Assignee: Macronix International Co., Ltd.
    Inventors: Sheng C. Lai, Ruichen Liu