Abstract: In an embodiment, a method includes: heating a byproduct transport ring of an extreme ultraviolet source, the byproduct transport ring disposed beneath vanes of the extreme ultraviolet source; after heating the byproduct transport ring for a first duration, heating the vanes; after heating the vanes, cooling the vanes; and after cooling the vanes for a second duration, cooling the byproduct transport ring.

Abstract: Example implementations described herein include a laser source and associated methods of operation that can balance or reduce uneven beam profile problem and even improve plasma heating efficiency to enhance conversion efficiency and intensity for extreme ultraviolet radiation generation. The laser source described herein generates an auxiliary laser beam to augment a pre-pulse laser beam and/or a main-pulse laser beam, such that uneven beam profiles may be corrected and/or compensated. This may improve an intensity of the laser source and also improve an energy distribution from the laser source to a droplet of a target material, effective to increase an overall operating efficiency of the laser source.

Abstract: A network quality measurement method and system are provided. In the method, a movement path and a movement speed of a vehicle device are determined according to a size of a space and an endurance time of the vehicle device, and the vehicle device is controlled to move on the movement path at the movement speed. During a movement of the vehicle device, a network quality in the space is measured according to a measurement frequency to generate network quality data. Whether the network quality in the space is changed is determined according to the network quality data. Whether there is an obstacle around the vehicle device is detected. When it is determined that the network quality in the space is changed or the obstacle is detected around the vehicle device, at least one of the movement path, the movement speed, and the measurement frequency is adjusted.

Abstract: A radiation source apparatus includes a vessel, a laser source, a collector, a horizontal obscuration bar, and a reflective mirror. The vessel has an exit aperture. The laser source is configured to emit a laser beam to excite a target material to form a plasma. The collector is disposed in the vessel and configured to collect a radiation emitted by the plasma and to reflect the collected radiation to the exit aperture of the vessel. The horizontal obscuration bar extends from a sidewall of the vessel at least to a position between the laser source and the exit aperture of the vessel. The reflective mirror is in the vessel and connected to the horizontal obscuration bar.

Abstract: The present disclosure provides an extreme ultraviolet (EUV) lithography system including a radiation source and an EUV control system integrated with the radiation source. The EUV control system includes a 3-dimensional diagnostic module (3DDM) designed to collect a laser beam profile of a laser beam from the radiation source in a 3-dimensional (3D) mode, an analysis module designed to analyze the laser beam profile, a database designed to store the laser beam profile, and an EUV control module designed to adjust the radiation source. The analysis module is coupled with the database and the EUV control module. The database is coupled with the 3DDM and the analysis module. The EUV control module is coupled with the analysis module and the radiation source.

Abstract: An organic electro-luminescence device including an anode, a cathode, an organic light emitting layer and a hole-transporting layer is provided. The cathode has a calcium electrode and an aluminum electrode adjacent thereto. The organic light emitting layer is disposed between the anode and the calcium electrode, and has a polymer, a phosphorescence dopant and an organic electron-transporting material, wherein a ratio of contents of the organic electron-transporting material to contents of the polymer in the organic light emitting layer is substantially between 0.1 and 1. The organic electron-transporting material is 1,3-bis(N,Nt-butyl-phenyl)-1,3,4-oxadiazole. The hole-transporting layer is disposed between the light emitting layer and the anode.