Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.

Abstract: A wafer storage elevator and method for detecting wafer position shift. The elevator includes a first storage elevator sidewall, a second storage elevator sidewall, and a storage seat positioned between the first and second storage elevator sidewalls. A first mirror block is coupled to a front side of the storage seat having a mirror positioned on a top surface of the block, and a second mirror block is coupled to the front side of the storage seat having a mirror that is positioned on the top surface of the second mirror block. The mirror of the first mirror block reflects a laser beam from an emission sensor to the second mirror block, and the mirror of the second mirror block reflects the laser beam from the mirror of the first mirror block to a receive sensor. A wafer misalignment is determined based upon an output of the receive sensor.

Abstract: An antenna structure capable of transmitting a WiGig band for a head-mounted wireless transmission display device including a display screen and an overhead device is disclosed. The antenna structure includes at least two body portions, each of the body portions having at least a signal transceiving end, the body portions are respectively arranged at left and right sides of the display screen, and signal transceiving ends of the body portions are extended outward from the left and right sides of the display screen respectively.

Abstract: Memory devices and methods of forming the same are provided. A memory device of the present disclosure includes a bottom dielectric layer, a gate structure extending vertically from the bottom dielectric layer, a stack structure, and a dielectric layer extending between the gate structure and the stack structure. The stack structure includes a first silicide layer, a second silicide layer, an oxide layer extending bet ween the first and second silicide layers, a channel region over the oxide layer and extending between the first and second silicide layers, and an isolation layer over the second silicide layer. The first and second silicide layers include cobalt, titanium, tungsten, or palladium.

Abstract: A transistor includes an insulating layer, a source region, a drain region, a channel layer, a ferroelectric layer, and a gate electrode. The source region and the drain region are respectively disposed on and in physical contact with two opposite sidewalls of the insulating layer. A thickness of the source region, a thickness of the drain region, and a thickness of the insulating layer are substantially the same. The channel layer is disposed on the insulating layer, the source region, and the drain region. The ferroelectric layer is disposed over the channel layer. The gate electrode is disposed on the ferroelectric layer.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.

Abstract: A semiconductor structure includes a plurality of memory cells stacked up along a first direction. Each of the memory cells include a memory stack, connecting lines, and insulating layers. The memory stack includes a first dielectric layer, a channel layer disposed on the first dielectric layer, a charge trapping layer disposed on the channel layer, a second dielectric layer disposed on the charge trapping layer, and a gate layer disposed in between the channel layer and the second dielectric layer. The connecting lines are extending along the first direction and covering side surfaces of the memory stack. The insulating layers are extending along the first direction, wherein the insulating layers are located aside the connecting lines and covering the side surfaces of the memory stack.

Abstract: Various embodiments of the present application are directed towards a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) memory device, as well as a method for forming the MFMIS memory device. According to some embodiments of the MFMIS memory device, a first source/drain region and a second source/drain region are vertically stacked. An internal gate electrode and a semiconductor channel overlie the first source/drain region and underlie the second source/drain region. The semiconductor channel extends from the first source/drain region to the second source/drain region, and the internal gate electrode is electrically floating. A gate dielectric layer is between and borders the internal gate electrode and the semiconductor channel. A control gate electrode is on an opposite side of the internal gate electrode as the semiconductor channel and is uncovered by the second source/drain region. A ferroelectric layer is between and borders the control gate electrode and the internal gate electrode.

Abstract: An immersion cooling system includes a pressure seal tank, an electronic apparatus, a pressure balance pipe and a relief valve. The pressure seal tank is configured to store coolant. A vapor space is formed in the pressure seal tank above the liquid level of the coolant. The electronic apparatus is completely immersed in the coolant. The pressure balance pipe has a gas collection length. The first port of the pressure balance pipe is disposed on the top surface of the pressure seal tank. The relief valve is disposed on the second port of the pressure balance pipe. The second port is farther away from the top surface of the pressure seal tank than the first port. The gas collection length of the pressure equalization tube allows the concentration of vaporized coolant at the first port to be greater than the concentration of vaporized coolant at the second port.

Abstract: The present application provides a torque limiter which includes a first torque limiting module for limiting a first torque with regard to a rotating direction and a second torque limiting module for limiting a second torque with regard to a counter direction of the rotating direction.

Abstract: In some embodiments, a robot comprises a movable base and a torso arranged on the base. The torso comprises a first portion mounted to the base; a second portion installed to the first portion, wherein the second portion could be moved relative to the first portion; and a support substantially connected to the second portion.

Abstract: The present disclosure relates to a robot, comprising: a movable base; and a torso arranged on the base. The torso comprises a first portion mounted to the base; a second portion installed to the first portion, wherein the second portion could be moved relative to the first portion; and a support substantially connected to the second portion.

Abstract: The present application provides a torque limiter which includes a first torque limiting module for limiting a first torque with regard to a rotating direction and a second torque limiting module for limiting a second torque with regard to a counter direction of the rotating direction.

Abstract: A multi-antenna module comprises a ground plane, a primary conductor, a secondary conductor and a plurality of coupling conductors, wherein the framework of the parallel primary radiation arm and secondary radiation arm can infinitely expand the number of antenna units in the same antenna structure. The capacitive coupling effect of parallel radiation arms and the inductance of the radiation arms themselves can effectively reduce the signal interference between antennae, whereby a plurality of antennae can be integrated to achieve antenna miniaturization. The primary conductor, the secondary conductor and the coupling conductors are all connected to the same ground plane, whereby the layout space is reduced, and the multi-antenna module is easy-to-assemble for various electronic devices.

Abstract: The present invention discloses a multi-antenna integration module, which comprises a first antenna, a second antenna and a common unit. The first antenna further comprises a first feeder cable, a first feeder member, a coupling unit, which has a first and second coupling members, and an extension conductor. The second antenna further comprises a second feeder cable, a radiation conductor and a coupling conductor. The common unit further comprises a common conductor which has a first and second conductor, a common short-circuit member and a common ground member. In the present invention, the design of the common unit integrates the radiation conductors, short-circuit members and ground members of different antenna systems into a single structure, whereby the isolation effect is promoted, and the signal interference among different antennae is decreased, and the space occupied by the antenna layout is reduced.

Abstract: A multiband antenna with the broadband function has a radiator, a feed cable, a first extension conductor, and a second extension conductor. The radiator has a microwave substrate, a coupling conductor, a first conductor, a second conductor, a third conductor, and a connecting conductor. The coupling conductor is connected with a positive signal wire of the feed cable. The third conductor is connected with a negative signal of the feed cable for transmitting electrical signals. The radiator generates the multiband mode of the antenna. By connecting the first extension conductor and the second extension conductor with the radiator, the surface current distribution and impedance variation of the antenna can be effectively adjusted to achieve the broadband effect.

Abstract: An antenna module is provided. The antenna module comprises a first radiation conductor, a second radiation conductor, a short-circuit element (s/c element), a ground plane, a feed-in cable and a spurious radiation conductor. One terminal of the second radiation conductor is near the first radiation conductor with a gap. One terminal of the s/c element is connected to the second radiation conductor and the other side of the s/c element is connected to the ground plane. The feed-in cable comprises a centre conductor and an external conductor, wherein the centre conductor is connected to the first radiation conductor and the external conductor is connected to the ground plane. The spurious radiation conductor is connected to the second radiation conductor. The second radiation conductor comprises a spurious radiation plate, a first radiation piece and a second radiation piece within the two sides of the second radiation conductor.

Abstract: An annular antenna is composed of a ground plane, a short-circuit conductor, a radiation conductor and a parasitic conductor. The radiation conductor has a connection member and a feeder member. Two ends of the short-circuit member are respectively connected to the ground plane and connection member. The feeder member is close to the ground plane and has a notch. The short-circuit conductor and radiation conductor run along the ground plane defining an in-annular area. The radiation conductor has a first coupling edge beside the in-annular area. The parasitic conductor is inside the in-annular area with one end coupled to the ground plane and a second coupling edge along the first coupling edge. The first and second coupling edges have a gap therebetween. The radiation and parasitic conductors respectively excite low-frequency and high-frequency resonant modes. The annular antenna covers multiple frequency bands, has UWB features and simplified structure and favors mass-production.

Abstract: A multi-antenna module comprises a ground plane, a primary conductor, a secondary conductor and a plurality of coupling conductors, wherein the framework of the parallel primary radiation arm and secondary radiation arm can infinitely expand the number of antenna units in the same antenna structure. The capacitive coupling effect of parallel radiation arms and the inductance of the radiation arms themselves can effectively reduce the signal interference between antennae, whereby a plurality of antennae can be integrated to achieve antenna miniaturization. The primary conductor, the secondary conductor and the coupling conductors are all connected to the same ground plane, whereby the layout space is reduced, and the multi-antenna module is easy-to-assemble for various electronic devices.

Abstract: An electrical connector includes a top plate, a first clamping plate extending integrally and downwardly from a first side of the top plate, and a second clamping plate extending integrally and downwardly from a second side of the top plate, and cooperating with the top plate and the first clamping plate to define a clamp for clamping a grounding plate. A connecting member extends integrally from the second side of the top plate and is connected electrically to a ground pattern provided on a circuit board of an antenna module.