Patents by Inventor Sheng-Chih WANG
Sheng-Chih WANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240395783Abstract: A package structure includes a package substrate, a first die, a second die, a first underfill, and a second underfill. The first die and a second die are disposed on the package substrate. The first underfill is between the first die and the package substrate, and the first underfill includes a first extension portion extending from a first sidewall of the first die toward the second die. The second underfill is between the second die and the package substrate, and the second underfill includes a second extension portion extending from a second sidewall of the second die toward the first die, the second extension portion overlapping the first extension portion on the package substrate.Type: ApplicationFiled: July 30, 2024Publication date: November 28, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jen-Yuan CHANG, Sheng-Chih WANG
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Publication number: 20240107414Abstract: This disclosure provides systems, methods and apparatus, including computer programs encoded on computer storage media, for switching a secondary cell to a primary cell. A user equipment (UE) monitors a first radio condition of the UE for beams of a primary cell and a second radio condition for beams of one or more secondary cells configured for the UE in carrier aggregation. The UE transmits a request to configure a candidate beam of at least one candidate secondary cell as a new primary cell in response to the first radio condition not satisfying a first threshold and the second radio condition for the at least one candidate secondary cell satisfying a second threshold. A base station determines to reconfigure at least one secondary cell as the new primary cell. The base station and the UE perform a handover of the UE to the new primary cell.Type: ApplicationFiled: September 23, 2022Publication date: March 28, 2024Inventors: Yu-Chieh HUANG, Kuhn-Chang LIN, Jen-Chun CHANG, Wen-Hsin HSIA, Chia-Jou LU, Sheng-Chih WANG, Chenghsin LIN, Yeong Leong CHOO, Chun-Hsiang CHIU, Chihhung HSIEH, Kai-Chun CHENG, Chung Wei LIN
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Publication number: 20240048965Abstract: Various aspects of the present disclosure generally relate to wireless communication. In some aspects, a user equipment (UE) may receive, from a network node, a network assistant information (NAI) message identifying a set of characteristics of a network connection. The UE may communicate with the network node using a communication configuration associated with the set of characteristics of the network connection. Numerous other aspects are described.Type: ApplicationFiled: August 4, 2022Publication date: February 8, 2024Inventors: Kai-Chun CHENG, Jen-Chun CHANG, Kuhn-Chang LIN, Wen-Hsin HSIA, Chia-Jou LU, Sheng-Chih WANG, Chenghsin LIN, Yu-Chieh HUANG, Chun-Hsiang CHIU, ChihHung HSIEH, Chung Wei LIN, Yeong Leong CHOO
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Publication number: 20240038741Abstract: A package structure includes a package substrate, a first die, a second die, a first underfill, and a second underfill. The first die and a second die are disposed on the package substrate. The first underfill is between the first die and the package substrate, and the first underfill includes a first extension portion extending from a first sidewall of the first die toward the second die. The second underfill is between the second die and the package substrate, and the second underfill includes a second extension portion extending from a second sidewall of the second die toward the first die, the second extension portion overlapping the first extension portion on the package substrate.Type: ApplicationFiled: October 6, 2023Publication date: February 1, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jen-Yuan CHANG, Sheng-Chih WANG
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Patent number: 11837586Abstract: A package structure includes a package substrate, a first die, a second die, a first underfill, and a second underfill. The first die and a second die are disposed on the package substrate. The first underfill is between the first die and the package substrate, and the first underfill includes a first extension portion extending from a first sidewall of the first die toward the second die. The second underfill is between the second die and the package substrate, and the second underfill includes a second extension portion extending from a second sidewall of the second die toward the first die, the second extension portion overlapping the first extension portion on the package substrate.Type: GrantFiled: June 17, 2021Date of Patent: December 5, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jen-Yuan Chang, Sheng-Chih Wang
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Publication number: 20220278083Abstract: A package structure includes a package substrate, a first die, a second die, a first underfill, and a second underfill. The first die and a second die are disposed on the package substrate. The first underfill is between the first die and the package substrate, and the first underfill includes a first extension portion extending from a first sidewall of the first die toward the second die. The second underfill is between the second die and the package substrate, and the second underfill includes a second extension portion extending from a second sidewall of the second die toward the first die, the second extension portion overlapping the first extension portion on the package substrate.Type: ApplicationFiled: June 17, 2021Publication date: September 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jen-Yuan CHANG, Sheng-Chih WANG
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Patent number: 10930701Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.Type: GrantFiled: April 22, 2019Date of Patent: February 23, 2021Assignee: EPISTAR CORPORATIONInventors: Chen Ou, Chun-Wei Chang, Chih-Wei Wu, Sheng-Chih Wang, Hsin-Mei Tsai, Chia-Chen Tsai, Chuan-Cheng Chang
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Publication number: 20190252459Abstract: A light-emitting device includes a first semiconductor layer having an uppermost surface and a bottommost surface; a first light-emitting structure and a second light-emitting structure formed on the same first semiconductor layer, wherein the first semiconductor layer is continuous; a first trench formed between the first and the second light-emitting structures; and a second electrode formed on the second semiconductor layer and including a second pad and a plurality of second extending parts extending from the second pad; wherein the second pad is between the first and the second light-emitting structures, and the plurality of second extending parts extends to the first and the second light-emitting structures, respectively; wherein the first trench passes through the uppermost surface but does not extend to the bottommost surface; wherein the first trench includes an equal width in a top view.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventors: Chen OU, Chun-Wei CHANG, Chih-Wei WU, Sheng-Chih WANG, Hsin-Mei TSAI, Chia-Chen TSAI, Chuan-Cheng CHANG
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Patent number: 10319780Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.Type: GrantFiled: August 11, 2017Date of Patent: June 11, 2019Assignee: EPISTAR CORPORATIONInventors: Chen Ou, Chun-Wei Chang, Chih-Wei Wu, Sheng-Chih Wang, Hsin-Mei Tsai, Chia-Chen Tsai, Chuan-Cheng Chang
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Publication number: 20170365637Abstract: A light-emitting device includes a first semiconductor layer; a first, a second and a third light-emitting structures formed on the same first semiconductor layer; a first trench between the first and the second light-emitting structures; a second trench between the second and the third light-emitting structures, wherein the first and the second trenches include bottom portions exposing a surface of the first semiconductor layer; a third trench in one of the light-emitting structures, exposing the first semiconductor layer and extending along a direction parallel with the first semiconductor layer; an insulating bridge part in the first and the second trenches, connecting the light-emitting structures; a first electrode in the third trench, electrically connecting to the first semiconductor layer; and a second electrode, including a pad on one of the light-emitting structures and an extending part; wherein the extending part is formed on the insulating bridge part and extends to the light-emitting structures.Type: ApplicationFiled: August 11, 2017Publication date: December 21, 2017Inventors: Chen OU, Chun-Wei CHANG, Chih-Wei WU, Sheng-Chih WANG, Hsin-Mei TSAI, Chia-Chen TSAI, Chuan-Cheng CHANG
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Patent number: 9768227Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, a first trench between the first light-emitting structure and the second light-emitting structure, exposing a first upper surface of the first semiconductor layer, and a second trench formed in the first light-emitting structure, exposing a second upper surface of the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein, wherein the first electrode is formed in the second trench.Type: GrantFiled: August 27, 2014Date of Patent: September 19, 2017Assignee: EPISTAR CORPORATIONInventors: Chen Ou, Chun-Wei Chang, Chih-Wei Wu, Sheng-Chih Wang, Hsin-Mei Tsai, Chia-Chen Tsai, Chuan-Cheng Chang
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Publication number: 20150076536Abstract: A light-emitting element comprises a first semiconductor layer, a first light-emitting structure and a second light-emitting structure on the first semiconductor layer, a first electrode on the first semiconductor layer, a second electrode on the first light-emitting structure, and a first trench between the first light-emitting structure and the second light-emitting structure, exposing the first semiconductor layer, wherein the first trench is devoid of the first electrode and the second electrode formed therein.Type: ApplicationFiled: August 27, 2014Publication date: March 19, 2015Inventors: Chen OU, Chun-Wei CHANG, Chih-Wei WU, Sheng-Chih WANG, Hsin-Mei TSAI, Chia-Chen TSAI, Chuan-Cheng CHANG