Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: A semiconductor structure includes a ferroelectric layer and a semiconductor layer. Thee ferroelectric layer has a first surface and a second surface opposite to the first surface. The semiconductor layer is formed on one of the first surface and the second surface.

Abstract: The present invention discloses a vessel power safety control system and operating method thereof. The vessel power safety control system includes a load power management module, a real-time monitoring module, an integration module and a power module. The present invention can assist the autonomous ship as any occurrence of fault during navigation. Once the accident occurs, the load power management module will give an instruction to control the DC bus to switch from closed circuit to open circuit to protect other equipment. After determining whether the errors of the equipment on board is eliminated, the load power management system performs automatic system reset procedure. As such, the DC bus can be converted from an open circuit to a closed circuit to restart the power supply for the facility.

Abstract: A multi-layer display module includes a first display panel, and a second display panel. The second display panel is located on one side of the first display panel and overlapped with the first display panel. There is a space between the first display panel and the second display panel. Transmittance of the second display panel is T2, luminance of the first display panel is L1, and luminance of the second display panel is L2. The multi-layer display module complies with T ? 2 > 40 ? % and 0.8 ? L ? 1 L ? 2 * ( 1 - T ? 2 ) .

Abstract: A semiconductor device includes a gate structure over a substrate. The device further includes an isolation feature in the substrate and adjacent to an edge of the gate structure. The device also includes a spacer overlying a sidewall of the gate structure. The spacer has a bottom lower than a top surface of the substrate.

Abstract: A semiconductor device includes a gate structure over a substrate. The device further includes an isolation feature in the substrate and adjacent to an edge of the gate structure. The device also includes a spacer overlying a sidewall of the gate structure. The spacer has a bottom lower than a top surface of the substrate.