Abstract: A process tube device can detect the presence of any external materials that may reside within a fluid flowing in the tube. The process tube device detects the external materials in-situ which obviates the need for a separate inspection device to inspect the surface of a wafer after applying fluid on the surface of the wafer. The process tube device utilizes at least two methods of detecting the presence of external materials. The first is the direct measurement method in which a light detecting sensor is used. The second is the indirect measurement method in which a sensor utilizing the principles of Doppler shift is used. Here, contrary to the first method that at least partially used reflected or refracted light, the second method uses a Doppler shift sensor to detect the presence of the external material by measuring the velocity of the fluid flowing in the tube.

Abstract: In a method of inspection of a semiconductor substrate a first beam of light is split into two or more second beams of light. The two or more second beams of light are respectively transmitted onto a first set of two or more first locations on top of the semiconductor substrate. In response to the transmitted two or more second beams of light, two or more reflected beams of light from the first set of two or more first locations are received. The received two or more reflected beams of light are detected to generate two or more detected signals. The two or more detected signals are analyzed to determine whether a defect exists at the set of the two or more first locations.

Abstract: In a method of inspection of a semiconductor substrate a first beam of light is split into two or more second beams of light. The two or more second beams of light are respectively transmitted onto a first set of two or more first locations on top of the semiconductor substrate. In response to the transmitted two or more second beams of light, two or more reflected beams of light from the first set of two or more first locations are received. The received two or more reflected beams of light are detected to generate two or more detected signals. The two or more detected signals are analyzed to determine whether a defect exists at the set of the two or more first locations.

Abstract: A process tube device can detect the presence of any external materials that may reside within a fluid flowing in the tube. The process tube device detects the external materials in-situ which obviates the need for a separate inspection device to inspect the surface of a wafer after applying fluid on the surface of the wafer. The process tube device utilizes at least two methods of detecting the presence of external materials. The first is the direct measurement method in which a light detecting sensor is used. The second is the indirect measurement method in which a sensor utilizing the principles of Doppler shift is used. Here, contrary to the first method that at least partially used reflected or refracted light, the second method uses a Doppler shift sensor to detect the presence of the external material by measuring the velocity of the fluid flowing in the tube.

Abstract: In a method of inspection of a semiconductor substrate a first beam of light is split into two or more second beams of light. The two or more second beams of light are respectively transmitted onto a first set of two or more first locations on top of the semiconductor substrate. In response to the transmitted two or more second beams of light, two or more reflected beams of light from the first set of two or more first locations are received. The received two or more reflected beams of light are detected to generate two or more detected signals. The two or more detected signals are analyzed to determine whether a defect exists at the set of the two or more first locations.