Abstract: A method includes forming a gate structure on a semiconductor substrate; depositing a carbon-containing seal layer over the gate structure; depositing a nitrogen-containing seal layer over the carbon-containing seal layer; introducing an oxygen-containing precursor on the nitrogen-containing seal layer; heating the substrate to dissociate the oxygen-containing precursor into an oxygen radical to dope into the nitrogen-containing seal layer; after heating the substrate, etching the nitrogen-containing seal layer and the carbon-containing seal layer, such that a remainder of the nitrogen-containing seal layer and the carbon-containing seal layer remains on a sidewall of the gate structure as a gate spacer.

Abstract: A method for making a semiconductor device includes patterning at least one dielectric layer disposed over a conductive cap layer to form a via opening penetrating through the at least one dielectric layer to expose the conductive cap layer and to form a top portion of the conductive cap layer into a metal oxide layer; converting the metal oxide layer to a metal oxynitride layer by a soft ashing process using a processing gas containing nitrogen gas; removing the metal oxynitride layer from a remaining portion of the conductive cap layer; and forming a via contact in the via opening to electrically connect the remaining portion of the conductive cap layer.

Abstract: A package module includes an interposer, a plurality of semiconductor dies on the interposer, a module stiffener on the interposer adjacent to the plurality of semiconductor dies, and a molding material layer on the interposer around the plurality of semiconductor dies and the module stiffener.

Abstract: A shortcircuiting and circuit-breaking alarm includes a Darlington amplifier comprised of two NPN transistors connected in series, a PNP transistor connected to the Darlington amplifier, a first planar or linear conductor connected between a base of a first NPN transistor of the Darlington amplifier and a positive pole of a power source, a second planar or linear conductor connected between the Darlington amplifier and the PNP transistor having an insulator interposed between the first conductor and the second conductor, the first NPN transistor having its base connected to the positive pole of the power source through a resistor of large resistance, and the PNP transistor having its base connected to a negative pole of a power source through a resistor of small resistance, whereby upon a cutting of either the first or the second conductor or a shortcircuiting of the two conductors, the PNP transistor will be conducted to conduct a silicon control rectifier, which is connected to a sounding integrated circuit

Abstract: An alarming wallet includes: an alarm switch having two contactors respectively formed on two leaves of the wallet whereby upon a withdrawal of the wallet from an owner's pocket, the two contactors of the alarm circuit will be closed by a pickpocket's fingers to sound the alarm for alerting a wallet owner and preventing the theft of his or her wallet.

Abstract: A missing reminder for pocket article includes: a wallet for storing credit card or the like, a gravitational actuator clamped on the wallet and an alarming circuit which is operatively sensed when withdrawing the wallet from an owner's pocket by seating a weight disk of the actuator on a receiver to close two contacts of the alarming circuit formed on the receiver to sound the alarm and give warning to the wallet owner.