Patents by Inventor Sheng-Chun Yang
Sheng-Chun Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11972957Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.Type: GrantFiled: July 31, 2020Date of Patent: April 30, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-chun Yang, Chih-Lung Cheng, Yi-Ming Lin, Po-Chih Huang, Yu-Hsiang Juan, Xuan-Yang Zheng
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Publication number: 20240084454Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.Type: ApplicationFiled: November 22, 2023Publication date: March 14, 2024Inventors: Yung-Tsun LIU, Kuang-Wei CHENG, Sheng-chun YANG, Chih-Tsung LEE, Chyi-Tsong NI
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Patent number: 11851761Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.Type: GrantFiled: April 16, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yung-Tsun Liu, Kuang-Wei Cheng, Sheng-chun Yang, Chih-Tsung Lee, Chyi-Tsong Ni
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Patent number: 11735436Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: GrantFiled: August 10, 2022Date of Patent: August 22, 2023Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Chih-Tsung Lee, Sheng-Chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20230260764Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.Type: ApplicationFiled: April 28, 2023Publication date: August 17, 2023Inventors: Sheng-chun YANG, Po-Wei LIANG, Chao-Hung WAN, Yi-Ming LIN, Liu Che KANG
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Patent number: 11685994Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.Type: GrantFiled: September 13, 2019Date of Patent: June 27, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-chun Yang, Yi-Ming Lin, Chih-tsung Lee, Yun-Tzu Chiu, Chao-Hung Wan
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Publication number: 20230197421Abstract: A method includes loading a wafer over a wafer chuck in a process chamber; performing a deposition process on the loaded wafer; supplying a fluid medium to a fluid guiding structure in the wafer chuck from a fluid inlet port on the wafer chuck, the fluid guiding structure comprising a plurality of arc-shaped channels fluidly communicated with each other; guiding the fluid medium from a first one of the arc-shaped channels of the fluid guiding structure to a second one of the arc-shaped channels of the fluid guiding structure. The second one of the arc-shaped channels of the fluid guiding structure is concentric with the first one of the arc-shaped channels of the fluid guiding structure from a top view.Type: ApplicationFiled: February 22, 2023Publication date: June 22, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Po-Wei LIANG, Chu-Han HSIEH, Chih-Lung CHENG, Po-Chih HUANG
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Patent number: 11670491Abstract: A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.Type: GrantFiled: July 15, 2020Date of Patent: June 6, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sheng-chun Yang, Po-Wei Liang, Chao-Hung Wan, Yi-Ming Lin, Liu Che Kang
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Publication number: 20230098570Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.Type: ApplicationFiled: December 6, 2022Publication date: March 30, 2023Inventors: Chih-Hung YEH, Tsung-Lin LEE, Yi-Ming LIN, Sheng-Chun YANG, Tung-Ching TSENG
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Publication number: 20230069237Abstract: The present disclosure provides a method and a system therefore for processing wafer. The method includes: extracting a first gas from a chamber via a first route; blocking a second route used to be pumped down to chuck a wafer placed in the chamber, wherein the second route connects the chamber and the first route; and providing a second gas via a third route to purge a junction of the first route and the second route.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: SHENG-CHUN YANG, CHIH-LUNG CHENG, YI-MING LIN, PO-CHIH HUANG, YU-HSIANG JUAN, XUAN-YANG ZHENG, REN-JYUE WANG, CHIH-YUAN WANG
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Publication number: 20230067115Abstract: A system and method for generating a gas curtain over an access port of a processing chamber for a semiconductor substrate. A gas flow stabilizer and a gas flow receiver, each including a horizontal flow section and a vertical flow section cooperate to generate a gas curtain that impedes gas, e.g., oxygen, from outside the processing chamber, from flowing into the chamber, for example, when the access port is opened to add/or to remove a workpiece from the processing chamber.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Inventors: Sheng-chun YANG, Po-Chih HUANG, Chih-Lung CHENG, Yi-Ming LIN, Chen-Hao LIAO, Min-Cheng CHUNG
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Patent number: 11594401Abstract: A method for processing semiconductor wafer is provided. The method includes loading a semiconductor wafer on a top surface of a wafer chuck. The method also includes supplying a gaseous material between the semiconductor wafer and the top surface of the wafer chuck through a first gas inlet port and a second gas inlet port located underneath a fan-shaped sector of the top surface. The method further includes supplying a fluid medium to a fluid inlet port of the wafer chuck and guiding the fluid medium from the fluid inlet port to flow through a number of arc-shaped channels located underneath the fan-shaped sector of the top surface. In addition, the method includes supplying a plasma gas over the semiconductor wafer.Type: GrantFiled: February 25, 2020Date of Patent: February 28, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun Yang, Yi-Ming Lin, Po-Wei Liang, Chu-Han Hsieh, Chih-Lung Cheng, Po-Chih Huang
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Publication number: 20220403945Abstract: A valve for throttling gas flow from a semiconductor processing tool includes a valve body. A shaft extends through the valve body. The shaft defines an internal cavity and a first opening communicating with the internal cavity. A first deflector is positioned on the shaft proximate the first opening and directed at a first interface between the shaft and the valve body. A method for throttling gas flow from a semiconductor processing tool includes providing a gas in an internal cavity defined in a shaft of a valve and directing the gas through an opening defined in the shaft and communicating with the bore toward an interface between the shaft and a valve body of the valve supporting the shaft.Type: ApplicationFiled: April 8, 2022Publication date: December 22, 2022Inventors: Sheng-Chun Yang, Po-Chih Huang, Chang Chun, Xuan-Yang Zheng, Tzu-Chuan Chao, Ren-Jyue Wang
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Patent number: 11532459Abstract: A chemical vapor deposition (CVD) apparatus is provided. The CVD apparatus includes a CVD chamber including multiple wall portions. A pedestal is disposed inside the CVD chamber, configured to support a substrate. A gas inlet port is disposed on one of the wall portions and below a substrate support portion of the pedestal. In addition, a gas flow guiding member is disposed inside the CVD chamber, coupled to the gas inlet port, and configured to dispense cleaning gases from the gas inlet port into the CVD chamber.Type: GrantFiled: June 28, 2018Date of Patent: December 20, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hung Yeh, Tsung-Lin Lee, Yi-Ming Lin, Sheng-Chun Yang, Tung-Ching Tseng
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Publication number: 20220392782Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: ApplicationFiled: August 10, 2022Publication date: December 8, 2022Inventors: Chih-Tsung LEE, Sheng-chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20220384239Abstract: A wafer fabricating system includes a wafer chuck, a gas inlet port, a fluid inlet port, first and second arc-shaped channels, a gas source, and a fluid containing source. The wafer chuck has a top surface, and orifices are formed on the top surface. The gas inlet port is formed in the wafer chuck and located underneath a fan-shaped sector of the top surface, wherein the gas inlet port is fluidly communicated with the orifices. The fluid inlet port is formed in the wafer chuck. The first and second arc-shaped channels are fluidly communicated with the fluid inlet port and located underneath the fan-shaped sector of the top surface and located at opposite sides of the gas inlet port from a top view. The gas source fluidly is connected to the gas inlet port. The fluid containing source fluidly is connected to the fluid inlet port.Type: ApplicationFiled: August 8, 2022Publication date: December 1, 2022Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Sheng-Chun YANG, Yi-Ming LIN, Po-Wei LIANG, Chu-Han HSIEH, Chih-Lung CHENG, Po-Chih HUANG
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Publication number: 20220356574Abstract: Pumping liners for use in an apparatus for depositing a material on a work piece by chemical vapor deposition includes a plurality of unevenly spaced apertures are disclosed. Uneven spacing of the plurality of apertures produces a uniform flow of processing gases within a processing chamber with which the pumping liner is associated. Films of materials deposited onto a work piece by chemical vapor deposition techniques using disclosed pumping liners exhibit desirable properties such as uniform thickness and smooth and uniform surfaces.Type: ApplicationFiled: July 20, 2022Publication date: November 10, 2022Inventors: Sheng-chun YANG, Yi-Ming LIN, Chih-tsung LEE, Yun-Tzu CHIU, Chao-Hung WAN
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Publication number: 20220333240Abstract: A chuck vacuum line of a semiconductor processing tool includes a first portion that penetrates a sidewall of a main pumping line of the semiconductor processing tool. The chuck vacuum line includes a second portion that is substantially parallel to the sidewall of the main pumping line and to a direction of flow in the main pumping line. A size of the second portion increases between an inlet end of the second portion and an outlet end of the second portion along the direction of flow in the main pumping line.Type: ApplicationFiled: April 16, 2021Publication date: October 20, 2022Inventors: Yung-Tsun LIU, Kuang-Wei CHENG, Sheng-chun YANG, Chih-Tsung LEE, Chyi-Tsong NI
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Patent number: 11443961Abstract: An apparatus for fabricating a semiconductor device has a housing defining a buffer chamber, a plurality of reactor ports formed in the housing for establishing interfaces with a plurality of process chambers that are to receive a wafer during a fabrication process to fabricate the semiconductor device, a wafer positioning robot positioned within the buffer chamber to transport the wafer between the plurality of process chambers through the plurality of reactor ports, a purge port formed in the housing for introducing a purge gas into the buffer chamber, a pump port formed in the housing for exhausting a portion of the purge gas from the buffer chamber, and a first flow enhancer that directs the purge gas flowing in an axial direction along a longitudinal axis of the purge port into the buffer chamber in a plurality of radial directions relative to the longitudinal axis.Type: GrantFiled: August 26, 2020Date of Patent: September 13, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, ltd.Inventors: Chih-Tsung Lee, Sheng-Chun Yang, Yun-Tzu Chiu, Chao-Hung Wan, Yi-Ming Lin, Chyi-Tsong Ni
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Publication number: 20220037169Abstract: A gas flow accelerator may include a body portion, and a tapered body portion including a first end integrally formed with the body portion. The gas flow accelerator may include an inlet port connected to the body portion and to receive a process gas to be removed from a semiconductor processing tool by a main pumping line. The semiconductor processing tool may include a chuck and a chuck vacuum line to apply a vacuum to the chuck to retain a semiconductor device. The tapered body portion may be configured to generate a rotational flow of the process gas to prevent buildup of processing byproduct on interior walls of the main pumping line. The gas flow accelerator may include an outlet port integrally formed with a second end of the tapered body portion. An end portion of the chuck vacuum line may be provided through the outlet port.Type: ApplicationFiled: July 31, 2020Publication date: February 3, 2022Inventors: Sheng-chun YANG, Chih-Lung CHENG, Yi-Ming LIN, Po-Chih HUANG, Yu-Hsiang JUAN, Xuan-Yang ZHENG