Abstract: An electromigration (EM) sign-off methodology that analyzes an integrated circuit design layout to identify heat sensitive structures, self-heating effects, heat generating structures, and heat dissipating structures. The EM sign-off methodology includes adjustments of an evaluation temperature for a heat sensitive structure by calculating the effects of self-heating within the temperature sensitive structure as well as additional heating and/or cooling as a function of thermal coupling to surrounding heat generating structures and/or heat sink elements located within a defined thermal coupling range.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a gate stack, and an interconnect structure over the gate stack and the semiconductor substrate. The semiconductor device structure also includes a resistive element over the interconnect structure, and the resistive element is directly above the gate stack. The semiconductor device structure further includes a thermal conductive element over the interconnect structure. The thermal conductive element at least partially overlaps the resistive element. In addition, the semiconductor device structure includes a dielectric layer separating the thermal conductive element from the resistive element.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a gate stack, and an interconnect structure over the gate stack and the semiconductor substrate. The semiconductor device structure also includes a resistive element over the interconnect structure, and the resistive element is directly above the gate stack. The semiconductor device structure further includes a thermal conductive element over the interconnect structure. A direct projection of the thermal conductive element on a main surface of the resistive element extends across a portion of a first imaginary line and a portion of a second imaginary line of the main surface. The first imaginary line is perpendicular to the second imaginary line. The first imaginary line and the second imaginary line intersect at a center of the main surface. The semiconductor device structure includes a dielectric layer separating the thermal conductive element from the resistive element.

Abstract: A semiconductor device including a substrate having a major surface. The semiconductor device further includes a dielectric material on the major surface of the substrate. The semiconductor device further includes a first plurality of fins extending from the major surface of the substrate, wherein the dielectric material surrounding each fin of the first plurality of fins has a first thickness. The semiconductor device further includes a second plurality of fins extending from the major surface of the substrate, wherein a first fin of the second plurality of fins is on a first side of the first plurality of fins, a second fin of the second plurality of fins is on a second side of the first plurality of fins opposite the first side, the dielectric material surround each fin of the second plurality of fins has a second thickness, and the second thickness is different from the first thickness.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate, a gate stack, and an interconnect structure over the gate stack and the semiconductor substrate. The semiconductor device structure also includes a resistive element over the interconnect structure, and the resistive element is directly above the gate stack. The semiconductor device structure further includes a thermal conductive element over the interconnect structure. A direct projection of the thermal conductive element on a main surface of the resistive element extends across a portion of a first imaginary line and a portion of a second imaginary line of the main surface. The first imaginary line is perpendicular to the second imaginary line. The first imaginary line and the second imaginary line intersect at a center of the main surface. The semiconductor device structure includes a dielectric layer separating the thermal conductive element from the resistive element.

Abstract: A semiconductor apparatus including a substrate having a substrate major surface, a dielectric material on the substrate major surface and having a second major surface distanced from the substrate major surface, and a plurality of fins extending from the substrate major surface through the dielectric material where the plurality of fins includes a first subset of fins and a second subset of fins, the first subset of fins located closer to a center of the plurality of fins than the second subset of fins, and an amount of heat generated during operation of the semiconductor device by each fin of the first subset of fins is less than an amount of heat generated by each fin of the second subset of fins during operation of the semiconductor device.

Abstract: A semiconductor apparatus including a substrate having a substrate major surface, a dielectric material on the substrate major surface and having a second major surface distanced from the substrate major surface, and a plurality of fins extending from the substrate major surface through the dielectric material where the plurality of fins includes a first subset of fins and a second subset of fins, the first subset of fins located closer to a center of the plurality of fins than the second subset of fins, and an amount of heat generated during operation of the semiconductor device by each fin of the first subset of fins is less than an amount of heat generated by each fin of the second subset of fins during operation of the semiconductor device.

Abstract: A method for protecting a substrate with gold fingers in tin-welding process comprising the steps of: taking a substrate with gold fingers thereon; forming circuit pattern and holes on the substrate; forming holes on at least one heat-tolerant film for tin-welding; coating the at least one heat-tolerant film upon the substrate as a protecting film; positioning the at least one heat-tolerant film; pressing the at least one heat-tolerant film; passing a tin furnace; removing the dregs upon the at least one heat-tolerant film; taking the at least one heat-tolerant film; checking whether the at least one heat-tolerant film is destroyed; if the at least one heat-tolerant film is not destroyed, returning to fourth step using the at least one heat-tolerant film to another substrate; and if the at least one heat-tolerant film is destroyed, returning to first step, using another heat-tolerant film to work with another substrate.

Abstract: An automatic carton slitting machines includes a transmission means for moving cartons, a sensing and positioning means for detecting and positioning the cartons at locations desired, a slitting means for slitting the carton and a control unit for coordinate and control the operations of all other means. The cutter means includes two spaced cutter sets each has a motor driven rotating saw cutter with adjustable slitting angle. One of the cutter sets is movable by a cutter set moving means for changing spacing distance between the cutter sets to process carton of different width. The cutter means also has a frame lifting means to adjust cutter sets height for processing cartons of different height. Through coordinating the transmission means, cutter set moving means and frame lifting means may coordinate their motion so that the cutter sets may move in three dimensions against the carton for automatically cleaving cartons of different size.

Abstract: An automatic goods picking device has a frame provided at least in one side thereof with a placing platform and a support rod which is provided with a plurality of goods placing areas each being fastened by two fastening members to form a stacking space along with the placing platform. The support rod is provided with a horizontal connection portion. The fastening members are respectively provided with a vertical connection portion enabling the fastening member to move adjustably upwards, downwards, leftwards, and rightwards such that a predetermined position of the vertical connection portion is corresponding in location to a predetermined position of the horizontal connection portion of the support rod, so as to form jointly with the placing platform a stacking space for goods of various heights and widths by using a fastening object.