Patents by Inventor Sheng-Fong CHEN
Sheng-Fong CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11908853Abstract: An integrated circuit includes a cell layer including a first cell and a second cell, a first metal layer over the cell layer and having a first conductive feature, a second metal layer over the first metal layer and having a second conductive feature, and a first via between the first metal layer and the second metal layer and connecting the first conductive feature to the second conductive feature. The first conductive feature spans over a boundary between the first and second cells, and has a lengthwise direction along a first direction. The second conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along a second direction that is perpendicular to the first direction.Type: GrantFiled: December 21, 2022Date of Patent: February 20, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan Chang, Kuo-Nan Yang, Chung-Hsing Wang, Lee-Chung Lu, Sheng-Fong Chen, Po-Hsiang Huang, Hiranmay Biswas, Sheng-Hsiung Chen, Aftab Alam Khan
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Publication number: 20230121153Abstract: An integrated circuit includes a cell layer including a first cell and a second cell, a first metal layer over the cell layer and having a first conductive feature, a second metal layer over the first metal layer and having a second conductive feature, and a first via between the first metal layer and the second metal layer and connecting the first conductive feature to the second conductive feature. The first conductive feature spans over a boundary between the first and second cells, and has a lengthwise direction along a first direction. The second conductive feature spans over the boundary between the first and second cells, and has a lengthwise direction along a second direction that is perpendicular to the first direction.Type: ApplicationFiled: December 21, 2022Publication date: April 20, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan CHANG, Kuo-Nan YANG, Chung-Hsing WANG, Lee-Chung LU, Sheng-Fong CHEN, Po-Hsiang HUANG, Hiranmay BISWAS, Sheng-Hsiung CHEN, Aftab Alam KHAN
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Patent number: 11552068Abstract: A method includes forming a cell layer including first and second cells, each of which is configured to perform a circuit function; forming a first metal layer above the cell layer and including a first conductive feature and a second conductive feature extending along a first direction, in which the first conductive feature extends from the first cell into the second cell, and in which a shortest distance between a center line of the first conductive feature and a center line of the second conductive feature along a second direction is less than a width of the first conductive feature, and the second direction is perpendicular to the first direction; forming a first conductive via interconnecting the cell layer and the conductive feature.Type: GrantFiled: March 26, 2021Date of Patent: January 10, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan Chang, Kuo-Nan Yang, Chung-Hsing Wang, Lee-Chung Lu, Sheng-Fong Chen, Po-Hsiang Huang, Hiranmay Biswas, Sheng-Hsiung Chen, Aftab Alam Khan
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Publication number: 20210217743Abstract: A method includes forming a cell layer including first and second cells, each of which is configured to perform a circuit function; forming a first metal layer above the cell layer and including a first conductive feature and a second conductive feature extending along a first direction, in which the first conductive feature extends from the first cell into the second cell, and in which a shortest distance between a center line of the first conductive feature and a center line of the second conductive feature along a second direction is less than a width of the first conductive feature, and the second direction is perpendicular to the first direction; forming a first conductive via interconnecting the cell layer and the conductive feature.Type: ApplicationFiled: March 26, 2021Publication date: July 15, 2021Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan CHANG, Kuo-Nan YANG, Chung-Hsing WANG, Lee-Chung LU, Sheng-Fong CHEN, Po-Hsiang HUANG, Hiranmay BISWAS, Sheng-Hsiung CHEN, Aftab Alam KHAN
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Patent number: 10964685Abstract: An integrated circuit includes a cell layer, a first metal layer, a first conductive via, and a second conductive via. The cell layer includes first and second cells, in which the first cell is separated from the second cell by a non-zero distance. The first metal layer includes a first conductive feature and a second conductive feature, the first conductive feature overlaps the first cell and does not overlap the second cell, and the second conductive feature overlaps the second cell and does not overlap the first cell, in which the first conductive feature is aligned with the second conductive feature along lengthwise directions of the first and second conductive features. The first conductive via interconnects the cell layer and the first conductive feature of the first metal layer. The second conductive via interconnects the cell layer and the second conductive feature of the first metal layer.Type: GrantFiled: December 20, 2019Date of Patent: March 30, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan Chang, Kuo-Nan Yang, Chung-Hsing Wang, Lee-Chung Lu, Sheng-Fong Chen, Po-Hsiang Huang, Hiranmay Biswas, Sheng-Hsiung Chen, Aftab Alam Khan
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Publication number: 20200126967Abstract: An integrated circuit includes a cell layer, a first metal layer, a first conductive via, and a second conductive via. The cell layer includes first and second cells, in which the first cell is separated from the second cell by a non-zero distance. The first metal layer includes a first conductive feature and a second conductive feature, the first conductive feature overlaps the first cell and does not overlap the second cell, and the second conductive feature overlaps the second cell and does not overlap the first cell, in which the first conductive feature is aligned with the second conductive feature along lengthwise directions of the first and second conductive features. The first conductive via interconnects the cell layer and the first conductive feature of the first metal layer. The second conductive via interconnects the cell layer and the second conductive feature of the first metal layer.Type: ApplicationFiled: December 20, 2019Publication date: April 23, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan CHANG, Kuo-Nan YANG, Chung-Hsing WANG, Lee-Chung LU, Sheng-Fong CHEN, Po-Hsiang HUANG, Hiranmay BISWAS, Sheng-Hsiung CHEN, Aftab Alam KHAN
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Patent number: 10515944Abstract: An integrated circuit includes a cell layer, a first metal layer, and a first conductive via. The cell layer includes first and second cells, each of which is configured to perform a circuit function. The first metal layer is above the cell layer and includes a first conductive feature that extends from the first cell into the second cell and that is configured to receive a supply voltage. A first conductive via interconnects the cell layer and the metal layer.Type: GrantFiled: September 5, 2018Date of Patent: December 24, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan Chang, Kuo-Nan Yang, Chung-Hsing Wang, Lee-Chung Lu, Sheng-Fong Chen, Po-Hsiang Huang, Hiranmay Biswas, Sheng-Hsiung Chen, Aftab Alam Khan
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Publication number: 20190148352Abstract: An integrated circuit includes a cell layer, a first metal layer, and a first conductive via. The cell layer includes first and second cells, each of which is configured to perform a circuit function. The first metal layer is above the cell layer and includes a first conductive feature that extends from the first cell into the second cell and that is configured to receive a supply voltage. A first conductive via interconnects the cell layer and the metal layer.Type: ApplicationFiled: September 5, 2018Publication date: May 16, 2019Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fong-Yuan CHANG, Kuo-Nan YANG, Chung-Hsing WANG, Lee-Chung LU, Sheng-Fong CHEN, Po-Hsiang HUANG, Hiranmay BISWAS, Sheng-Hsiung CHEN, Aftab Alam KHAN