Patents by Inventor Sheng-Fu Hong

Sheng-Fu Hong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8217670
    Abstract: The invention provides a label-free sensor that includes a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and being in contact with the first electrode and the second electrode. The semiconductor layer has a plurality of probe groups bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance having bonding specificity with the probe groups. The semiconductor layer is bonded with the probe groups, and the detection of detected object is performed in an instant, quick, rapid, and sensitive manner by measuring variation in electric current, avoiding the use of fluorescent reading equipment for reading fluorescent signals.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: July 10, 2012
    Assignee: National Chiao Tung University
    Inventors: Hsin-Fei Meng, Sheng-Fu Hong, Yu-Chiang Chao, Chien-Cheng Liu, Wen-Hsing Liu, Cheng-Chung Chang, Jan-Hao Li, Ming-Zhi Dai
  • Patent number: 7968875
    Abstract: An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.
    Type: Grant
    Filed: July 10, 2009
    Date of Patent: June 28, 2011
    Assignee: National Chiao Tung University
    Inventors: Hsin-Fei Meng, Sheng-Fu Hong, Hsin-Rong Tseng, En-Chen Chen, Chia-Hung Chu
  • Publication number: 20100291703
    Abstract: A biosensor applicable to an environment suitable for biosensing is provided, which is a solid-state element for performing detections in an aqueous environment. The biosensor at least includes a biosensing layer, a light-emitting diode and a photodiode. The biosensing layer causes changes in the light-emitting property thereof after absorbing, adsorbing and/or bonding with a biological substance released during in vivo signal transduction in an organism, and the rays of light generated by excitation of the light-emitting diode causes the biosensing layer to emit fluorescence. After the fluorescence is absorbed by the photodiode, it can be converted into an interpretable photocurrent signal. Afterwards, the meaning of the in vivo signal transduction can be understood by interpretation of the photocurrent signal.
    Type: Application
    Filed: May 7, 2010
    Publication date: November 18, 2010
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Hsin- Fei Meng, Sheng-Fu Hong, Yu-Chiang Chao, Yun-Ru Horng, Pei-Yu Tsai, Chia-Ming Yang
  • Publication number: 20100283039
    Abstract: An organic photosensitive optoelectronic device includes an anode, an organic photosensitive layer formed on the anode and having a donor portion and an acceptor portion, a hole blocking layer formed on the organic photosensitive layer so as for the organic photosensitive layer to be sandwiched between the anode and the hole blocking layer, and a cathode formed on the hole blocking layer so as for the hole blocking layer to be sandwiched between the cathode and the organic photosensitive layer. The highest occupied molecular orbitals (HOMO) of the hole blocking layer is at least 0.3 eV higher than that of the donor portion. Therefore, the optoelectronic device efficiently suppresses dark current so as to enhance sensitivity when applied to a detector.
    Type: Application
    Filed: July 10, 2009
    Publication date: November 11, 2010
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Hsin- Fei Meng, Sheng-Fu Hong, Hsin-Rong Tseng, En-Chen Chen, Chia-Hung Chu
  • Publication number: 20100237885
    Abstract: A label-free sensor is disclosed. The label-free sensor comprises a substrate, a first electrode formed on the substrate, a second electrode formed on the substrate and spaced away from the first electrode, and a semiconductor layer formed on the substrate and is in contact with the first electrode and the second electrode, wherein the semiconductor layer has a plurality of probe groups, which are bonded to the semiconductor layer by functionalization, for sensing a coupling-specific substance, which has bonding specificity with the probe groups. The semiconductor layer of the label-free sensor of the present invention is bonded with probe groups, and the detection of detected object is performed in instant, quick, rapid, and sensitive manner by measuring variation in electric current, thereby avoiding the use of the fluorescent reading equipment for reading fluorescent signals.
    Type: Application
    Filed: July 10, 2009
    Publication date: September 23, 2010
    Applicant: NATIONAL CHIAO TUNG UNIVERSITY
    Inventors: Hsin- Fei Meng, Sheng-Fu Hong, Yu-Chiang Chao, Chien-Cheng Liu, Wen-Hsing Liu, Cheng-Chung Chang, Jan-Hao Li, Ming-Zhi Dai