Patents by Inventor Sheng-fu Horng
Sheng-fu Horng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8026186Abstract: The present invention provides a microwave annealing method for a plastic substrate. The method comprises pulsed microwave annealing to an organic photo-voltaic device to avoid warpage and degradation of the plastic substrate. Utilizing pulsed microwave annealing method can improve the wettability of the organic layer on the plastic substrate verified by contact angle measurement, and achieving the organic solar cell fabricated with higher power conversion efficiency.Type: GrantFiled: October 6, 2010Date of Patent: September 27, 2011Assignee: National Tsing Hua UniversityInventors: Sheng-Fu Horng, Jen-Chun Wang, Tse-Pan Yang, Ming-Kun Lee, Tarng-Shiang Hu, Hsin-Fei Meng
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Patent number: 8017175Abstract: A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.Type: GrantFiled: December 20, 2005Date of Patent: September 13, 2011Assignee: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Sheng-Fu Horng, Chain-Shu Hsu, Shi-Cheng Lin, Hua-Hsien Liao
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Publication number: 20110163300Abstract: The present invention provides compound of formula (I) wherein each substituent is defined in the specification. The compound may be used, in combination with other organic light-emitting materials, in a light-emitting layer of an organic light-emitting element. The present invention also provides an organic light-emitting element including a first electrode, a second electrode and at least three layers of organic material layers disposed between the first electrode and the second electrode, wherein the layer used as a light-emitting layer contains a compound of formula (I). Further, an all-solution process, which is used for fabricating the organic light-emitting element of the present invention, has the advantages such as avoiding miscibility among the layers to fabricate an element with a large surface area and lower production cost.Type: ApplicationFiled: July 2, 2010Publication date: July 7, 2011Applicants: NATIONAL CHIAO TUNG UNIVERSITY, LUMINESCENCE TECHNOLOGY CORP.Inventors: Hsin-Fei Meng, Sheng-Fu Horng, Hsin-Rong Tseng, Chia-Da Yu, Chung-Lin Yeh, Sheng-Yang Huang, Feng-Wen Yen, I-Feng Lin
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Patent number: 7973308Abstract: An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.Type: GrantFiled: April 24, 2009Date of Patent: July 5, 2011Assignee: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Sheng-Fu Horng, Chia-Ming Yang
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Publication number: 20110159171Abstract: A method for fabricating an organic light emitting diode and a device thereof are provided. The method includes: providing a substrate; dispensing to the substrate a second organic molecule solution resulting from dissolving a second organic molecule in a solvent; applying the second organic molecule solution to a surface of the substrate so as to form a wet film layer; and heating the wet film layer by a heating unit to remove the solvent therefrom and thereby form a second organic molecule film. The method is effective in fabricating a uniform multilayer structure for use in fabrication of large-area photoelectric components.Type: ApplicationFiled: June 23, 2010Publication date: June 30, 2011Applicant: National Chiao Tung UniversityInventors: Chain-Shu Hsu, Hsin-Fei Meng, Sheng-Fu Horng, Hsiao-Wen Zan, Hsin-Rong Tseng, Chung-Ling Yeh, Hung-Wei Hsu, Chang-Yao Liu, Hsiu-Yuan Yang
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Publication number: 20110151646Abstract: The present invention provides a microwave annealing method for a plastic substrate. The method comprises pulsed microwave annealing to an organic photo-voltaic device to avoid warpage and degradation of the plastic substrate. Utilizing pulsed microwave annealing method can improve the wettability of the organic layer on the plastic substrate verified by contact angle measurement, and achieving the organic solar cell fabricated with higher power conversion efficiency.Type: ApplicationFiled: October 6, 2010Publication date: June 23, 2011Inventors: Sheng-Fu Horng, Jen-Chun Wang, Tse-Pan Yang, Ming-Kun Lee, Tarng-Shiang Hu, Hsin-Fei Meno
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Patent number: 7955915Abstract: The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.Type: GrantFiled: July 29, 2009Date of Patent: June 7, 2011Assignee: National Tsing Hua UniversityInventors: Chien-Cheng Liu, Hsin-Fei Meng, Sheng-Fu Horng
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Publication number: 20110108936Abstract: A pressure detector is disclosed having an organic transistor, a pressure-detecting layer and a first electrode. The organic transistor includes an emitter, an organic layer, a grid formed with holes, and a collector, the organic layer being sandwiched between the emitter and the collector. The pressure-detecting layer is formed on the organic transistor such that the collector is sandwiched between the organic layer and the pressure-detecting layer. The first electrode is formed on the pressure-detecting layer such that the pressure-detecting layer is sandwiched between the collector and the first electrode. The area of the active region of the pressure detector is determined by the overlapped area of the electrodes, thereby reducing the pitch of the electrodes and thus the size of the pressure detector.Type: ApplicationFiled: May 24, 2010Publication date: May 12, 2011Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsin- Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao, Chun-Yu Chen, Wei-Jen Lai
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Publication number: 20110100431Abstract: A tandem solar cell and fabricating method thereof are disclosed. The steps of the fabricating method comprises: a top inverted solar cell having a plurality of inverted solar sub-cells is provided; a bottom normal solar cell having a plurality of normal solar sub-cells accompanying with the inverted solar sub-cells is provided; and processing fit process of the top inverted solar cell and the bottom normal solar cell is executed, wherein an interlayer is disposed between the bottom normal solar cell and the top inverted solar cell, and the interlayer includes a plurality of conductive dots. The plurality of inverted solar sub-cells and normal solar sub-cells are placed with an offset distance from each other, and a plurality of solar sub-cells are formed after the pressing fit process, and the plurality of solar sub-cells are series/parallel connection each other by electrically connecting the plurality of conductive dots.Type: ApplicationFiled: March 25, 2010Publication date: May 5, 2011Inventors: Sheng-Fu HORNG, Hsin-Fe Meng, Ming-Kun Lee, Jen-Chun Wang, Tsung-Te Chen
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Publication number: 20110100465Abstract: The present invention provides an organic solar cell with oriented distribution of carriers, which forming variation of distribution of electron donors and electron acceptors between active sub-layers of an active layer by utilizing buffer layer method, for improving carrier extraction efficiency and thus effectively enhancing performance of the organic solar. The present invention also provides a method for manufacturing an organic solar cell with oriented distribution of carriers.Type: ApplicationFiled: March 31, 2010Publication date: May 5, 2011Inventors: Sheng-Fu Horng, Hsin-Fei Meng, Ming-Kun Lee, Jen-Chun Wang, Tsung-Hang Kuo
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Patent number: 7791068Abstract: A vertical organic light emitting transistor assembly and a horizontal organic light emitting transistor assembly are provided. The vertical organic light emitting transistor assembly comprises a first/second vertical transistor and a first/second organic light emitting diode perpendicularly integrated with the first/second vertical transistor, respectively. The horizontal organic light emitting transistor assembly comprises a substrate, a third vertical transistor and a third organic light emitting diode. The third vertical transistor and the third organic light emitting diode are arranged abreast on the substrate. By integrating the organic light emitting diode and the vertical transistor into a unitary electronic element, the vertical transistor can efficiently drive the organic light emitting diode so that the organic light emitting transistor assembly can overcome limitations caused by existing manufacturing processes and adapt to extensive applications.Type: GrantFiled: May 15, 2008Date of Patent: September 7, 2010Assignee: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao
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Patent number: 7772079Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.Type: GrantFiled: February 20, 2009Date of Patent: August 10, 2010Assignee: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao
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Publication number: 20100140594Abstract: An organic optoelectronic component is provided, which includes a first electrode, an active layer formed on the first electrode, a second intermediate layer formed on the active layer, and a second electrode formed on the second intermediate layer, wherein the second intermediate layer is formed with a second mixture containing a second polymer and at least a second organic molecule. The second organic molecule is one for forming hole transferring material, electron transferring material, electron blocking material or hole blocking material. The organic optoelectronic component of the present invention is prepared by a solution process, thereby simplifying the process, improving film-formation property, and enhancing component efficiency.Type: ApplicationFiled: April 28, 2009Publication date: June 10, 2010Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsin-Fei Meng, Sheng-Fu Horng, Hsin-Rong Tseng, Guan-Cheng Li
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Publication number: 20100133434Abstract: An organic semiconductor infrared distance sensing apparatus and an organic infrared emitting apparatus thereof are disclosed. The organic semiconductor infrared distance sensing apparatus comprises an organic infrared emitting apparatus and an organic infrared receiving apparatus. The organic infrared emitting apparatus has a positive electrode layer and a negative electrode layer to form an electric field, and organic light emitting molecules are sandwiched between the two layers and correspond to the positive electrode layer and the negative electrode layer. Under a positive bias, a plurality of electrons and holes are respectively injected from electrodes and recombine with each other to emit photons. An infrared organic conversion layer absorbs and transfers the energy to infrared emitting molecules to emit infrared light.Type: ApplicationFiled: April 6, 2009Publication date: June 3, 2010Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsin-Fei Meng, Sheng-Fu Horng, Hsin-Rong Tseng, Chia-Ming Yang, En-Chen Chen
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Patent number: 7692269Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.Type: GrantFiled: February 15, 2007Date of Patent: April 6, 2010Assignee: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao
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Publication number: 20100025667Abstract: The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.Type: ApplicationFiled: July 29, 2009Publication date: February 4, 2010Applicant: NAIONAL TSING HUA UNIVERSITYInventors: Chien-Cheng Liu, Hsin-Fei Meng, Sheng-Fu Horng
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Publication number: 20100021622Abstract: Apparatus and method for forming multilayer polymer thin film. The method uses a solution container with a gap to prevent the huge amount of solution from directly falling on the first layer. Then the wet film is formed by moving the container with the thin film thickness is decided by the distance between the gap and the substrate. The wet film is dried in a very short time by the heater therefore there is no time for the second solvent to dissolve the first layer. The method can effectively achieve the large-area and multilayer structure in organic devices through solution processing.Type: ApplicationFiled: July 24, 2008Publication date: January 28, 2010Applicant: National Chiao Tung UniversityInventors: Hsin-Fei Meng, Sheng-Fu Horng, Hsin-Rong Tseng, Chi-Shen Tuan
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Publication number: 20090289247Abstract: An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.Type: ApplicationFiled: April 24, 2009Publication date: November 26, 2009Applicant: NATIONAL CHIAO TUNG UNIVERSITYInventors: Hsin-Fei Meng, Sheng-Fu Horng, Chia-Ming Yang
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Publication number: 20090256140Abstract: A light-detecting device structure comprises a substrate, a vertical organic light-emitting transistor and a light-detecting unit, wherein the vertical organic light-emitting transistor is disposed at a first location on the substrate, and the light-detecting unit is disposed at a second location on the substrate, in which the first and the second locations can be spaced out an appropriate distance as needed. The vertical organic light-emitting transistor emits a light to an object, and the light-detecting unit receives a reflected light from the object. The reflected light received is analyzed to determine a distance between the light-detecting device structure and the object, as well as a shape or a composition of the object.Type: ApplicationFiled: May 21, 2008Publication date: October 15, 2009Inventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao
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Publication number: 20090230383Abstract: A passive matrix organic light emitting diode display device comprises a plurality of vertical organic light emitting transistors, each having a first collector, a first grid/base, and a first emitter. Therein, the first collectors are electrically connected and arranged parallelly to form a plurality of first scan units, and the first grids/bases are electrically connected and arranged parallelly to form a plurality of second scan units, while the first emitters are integrated into a common electrode, in which the first scan units and the second scan units are perpendicularly crossed. By perpendicularly combining vertical transistors onto organic light emitting diodes so as to drive the organic light emitting diodes, an active area as well as a luminance of the organic light emitting diode display device are enhanced and consequently an aperture ratio of each pixel unit in the organic light emitting diode display device is increased.Type: ApplicationFiled: May 15, 2008Publication date: September 17, 2009Inventors: Hsin-Fei Meng, Sheng-Fu Horng, Yu-Chiang Chao