Abstract: In an embodiment, a device includes: a word line extending in a first direction; a data storage layer on a sidewall of the word line; a channel layer on a sidewall of the data storage layer; a back gate isolator on a sidewall of the channel layer; and a bit line having a first main region and a first extension region, the first main region contacting the channel layer, the first extension region separated from the channel layer by the back gate isolator, the bit line extending in a second direction, the second direction perpendicular to the first direction.

Abstract: A semiconductor device and method of manufacture are provided. In embodiments a memory array is formed by manufacturing portions of a word line during different and separate processes, thereby allowing the portions formed first to act as a structural support during later processes that would otherwise cause undesired damage to the structures.

Abstract: A memory array device includes a stack of transistors over a semiconductor substrate, a first transistor of the stack being disposed over a second transistor of the stack. The first transistor includes a first memory film along a first word line and a first channel region along a source line and a bit line, the first memory film being disposed between the first channel region and the first word line. The second transistor includes a second memory film along a second word line and a second channel region along the source line and the bit line, the second memory film being disposed between the second channel region and the second word line. The memory array device includes a first via electrically connected to the first word line and a second via electrically connected to the second word line, the second staircase via and the first staircase via having different widths.

Abstract: In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.

Abstract: A control device includes a sensor, an analysis unit, and a control unit. The sensor includes a stationary member and a rotatable member. The stationary member includes a first electrode and at least two second electrodes. The rotatable member includes a third electrode and a fourth electrode. The first electrode electrically contacts the third electrode and each second electrode electrically contacts the fourth electrode in sequence when the stationary member is rotated. The analysis unit is configured for determining which second electrode electrically contacts the fourth electrode. The control unit is configured for executing a corresponding command based upon the determination of the analysis unit.

Abstract: A control device includes a sensor, an analysis unit, and a control unit. The sensor includes a stationary member and a rotatable member. The stationary member includes a first electrode and at least two second electrodes. The rotatable member includes a third electrode and a fourth electrode. The first electrode electrically contacts the third electrode and each second electrode electrically contacts the fourth electrode in sequence when the stationary member is rotated. The analysis unit is configured for determining which second electrode electrically contacts the fourth electrode. The control unit is configured for executing a corresponding command based upon the determination of the analysis unit.