Patents by Inventor SHENG-HAUNG HAUNG

SHENG-HAUNG HAUNG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20200119092
    Abstract: A method for fabricating a semiconductor memory device is provided. The method includes: etching a first region of the semiconductor memory device to expose a first capping layer; forming a second capping layer on the first capping layer; etching a portion of the first capping layer and a portion of the second capping layer to form a first trench reaching a first metal line; and forming a second metal line in the first trench to contact the first metal line.
    Type: Application
    Filed: December 16, 2019
    Publication date: April 16, 2020
    Inventors: Harry-Hak-Lay CHUANG, Sheng-Haung HAUNG, Shih-Chang LIU, Chern-Yow HSU
  • SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20180350874
    Abstract: A method for fabricating a semiconductor memory device is provided. The method includes: etching a first region of the semiconductor memory device to expose a first capping layer; forming a second capping layer on the first capping layer; etching a portion of the first capping layer and a portion of the second capping layer to form a first trench reaching a first metal line; and forming a second metal line in the first trench to contact the first metal line.
    Type: Application
    Filed: July 20, 2018
    Publication date: December 6, 2018
    Inventors: Harry-Hak-Lay CHUANG, Sheng-Haung HAUNG, Shih-Chang LIU, Chern-Yow HSU
  • Semiconductor memory device and method for fabricating the same
    Patent number: 10032828
    Abstract: A method for fabricating a semiconductor memory device is provided. The method includes: etching a first region of the semiconductor memory device to expose a first capping layer; forming a second capping layer on the first capping layer; etching a portion of the first capping layer and a portion of the second capping layer to form a first trench reaching a first metal line; and forming a second metal line in the first trench to contact the first metal line.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: July 24, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Sheng-Haung Haung, Shih-Chang Liu, Chern-Yow Hsu
  • SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20180006085
    Abstract: A method for fabricating a semiconductor memory device is provided. The method includes: etching a first region of the semiconductor memory device to expose a first capping layer; forming a second capping layer on the first capping layer; etching a portion of the first capping layer and a portion of the second capping layer to form a first trench reaching a first metal line; and forming a second metal line in the first trench to contact the first metal line.
    Type: Application
    Filed: July 1, 2016
    Publication date: January 4, 2018
    Inventors: HARRY-HAK-LAY CHUANG, SHENG-HAUNG HAUNG, SHIH-CHANG LIU, CHERN-YOW HSU