Abstract: A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.

Abstract: A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the active layer; and a second electron blocking layer formed between the second semiconductor layer and the active layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.

Abstract: Disclosed is a light-emitting device. The light-emitting device comprises: a first conductivity type semiconductor layer; a second conductivity type semiconductor layer; and an active region comprising a material having a composition of AlxInyGa(1-x-y)N (0?x?1, 0?y?1, 0?x+y?1) between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer, wherein the active region comprising: a plurality of barriers and one well disposed between any two of adjacent barriers, wherein the barriers comprises a composite barrier and a single barrier while the composite barrier is composed of a gradient layer having an element with a gradient concentration therein and a first non-gradient layer having a non-gradient composition, and the single barrier is composed of a second non-gradient layer adjacent to the first conductivity type semiconductor layer or the second conductivity type semiconductor layer.

Abstract: A light-emitting device comprises a first semiconductor layer; a second semiconductor layer; a light-emitting layer formed between the first semiconductor layer and the second semiconductor layer; a first electron blocking layer formed between the first semiconductor layer and the light-emitting layer; and a second electron blocking layer formed between the second semiconductor layer and the light-emitting layer, wherein the thickness of the second electron blocking layer is not equal to that of the first electron blocking layer, and/or the band gap energy of the second electron blocking layer is not equal to that of the first electron blocking layer.

Abstract: A fabrication method of a light-emitting device comprises providing a growth substrate; forming a protective layer on a first surface of the growth substrate; and forming a first semiconductor layer on a second surface of the growth substrate opposite to the first surface, wherein the coefficient of thermal expansion of the growth substrate is smaller than that of the protective layer and the first semiconductor layer.

Abstract: A light emitting device comprising a first semiconductor layer, a second semiconductor layer and a quantum well layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on the opposite sides of the quantum well layer, the quantum well layer comprising a plurality of quantum well rods which are separated from each other, and each of the quantum well rods has only one quantum well.

Abstract: A light emitting diode device is provided, which comprises a substrate comprising a first growth surface and a bottom surface opposite to the first growth surface; a dielectric layer with a plurality of openings therein formed on the first growth surface; a plurality of semiconductor nano-scaled structures formed on the substrate protruding through the openings; a layer formed on the plurality of semiconductor nano-scaled structures with a second growth surface substantially parallel with the bottom surface; a light emitting diode structure formed on the second growth surface; wherein the diameters of the openings are smaller than 250 nm, and wherein the diameters of the plurality semiconductor nano-scaled structures are larger than the diameters of the corresponding openings.