Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: A mode switching system including a first electronic device and the second electronic device is provided. The first electronic device includes a main control unit, a USB Type-C interface controller and a USB hub. The interface controller is coupled to the main control unit. The USB hub is coupled to the interface controller. The second electronic device is coupled to the interface controller of the first electronic device. The main control unit is configured to: (1) disable the USB hub in response to a mode switching instruction; (2) switch the mode of the interface controller from a first mode to a second mode; (3) command the interface controller to re-communicate with the second electronic device.

Abstract: A mode switching system including a first electronic device and the second electronic device is provided. The first electronic device includes a main control unit, a USB Type-C interface controller and a USB hub. The interface controller is coupled to the main control unit. The USB hub is coupled to the interface controller. The second electronic device is coupled to the interface controller of the first electronic device. The main control unit is configured to: (1) disable the USB hub in response to a mode switching instruction; (2) switch the mode of the interface controller from a first mode to a second mode; (3) command the interface controller to re-communicate with the second electronic device.