Abstract: A method for forming a UV transmission passivation coating on an integrated circuit, such as EPROM, after completion of the active device and metal routing circuitry comprises depositing a first barrier dielectric layer over the integrated circuit; smoothing out underlying features by applying a layer of flowable dielectric over the first dielectric layer; and depositing a second dielectric layer over the flowable dielectric. Next a photoresist pattern is made over the second dielectric coating, having an opening layer over the at least one conductive pad. A wet etch process is used to remove portions of the second dielectric layer exposed by the opening. A dry etch process is used to remove portions of the remaining layers exposed through the opening, including the remaining portions of the second dielectric layer, the flowable dielectric layer and the first dielectric layer, down to the conductive pad. Finally, the photoresist is removed.