Patents by Inventor Sheng-Hsiu Peng

Sheng-Hsiu Peng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process control method and process control system
    Patent number: 9864363
    Abstract: A process control method is provided for performing a deposition process on a plurality of wafers of a batch. The process control method includes: deciding a placement location of the wafers of the batch according to the history information of a tool and the product information of the batch; calculating a target value of each placement location according to the placement location of the wafers of the batch and the history information of the tool; calculating a process parameter according to the history information of the tool, the product information of the batch, and the target value of each placement location; and performing a deposition process according to the placement location of the wafers of the batch and the process parameter.
    Type: Grant
    Filed: October 31, 2014
    Date of Patent: January 9, 2018
    Assignee: Powerchip Technology Corporation
    Inventors: Jyun-Da Wu, Shih-Tsung Hsiao, Chien-Chung Chen, Huang-Wei Wu, Huang-Wen Chen, Sheng-Hsiu Peng
  • PROCESS CONTROL METHOD AND PROCESS CONTROL SYSTEM
    Publication number: 20160047045
    Abstract: A process control method is provided for performing a deposition process on a plurality of wafers of a batch. The process control method includes: deciding a placement location of the wafers of the batch according to the history information of a tool and the product information of the batch; calculating a target value of each placement location according to the placement location of the wafers of the batch and the history information of the tool; calculating a process parameter according to the history information of the tool, the product information of the batch, and the target value of each placement location; and performing a deposition process according to the placement location of the wafers of the batch and the process parameter.
    Type: Application
    Filed: October 31, 2014
    Publication date: February 18, 2016
    Inventors: Jyun-Da Wu, Shih-Tsung Hsiao, Chien-Chung Chen, Huang-Wei Wu, Huang-Wen Chen, Sheng-Hsiu Peng
  • HSG PROCESS AND PROCESS OF FABRICATING LARGE-AREA ELECTRODE
    Publication number: 20070059880
    Abstract: A hemispherical silicon grain (HSG) process is described. A doped poly-Si layer is formed on a substrate, and then an oxidative gas is used to oxidize the surface of the doped poly-Si layer to form an oxide layer. An a-Si layer is then formed on the oxide layer, and the a-Si layer is converted into HSG.
    Type: Application
    Filed: September 14, 2005
    Publication date: March 15, 2007
    Inventors: Li-Fang Yang, Kun-Shu Huang, Sheng-Hsiu Peng, Tzung-Hua Ying