Patents by Inventor Sheng-Hsiung Cheu

Sheng-Hsiung Cheu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication process for low resistivity tungsten layer with good adhesion to insulator layers
    Patent number: 6274484
    Abstract: A process for forming a low resistivity tungsten layer, for use as a metal gate structure, or a metal damascene structure, has been developed. The process features initial deposition of a metastable tungsten nitride layer, via a plasma enhanced, or metal organic chemical vapor deposition procedures, resulting in good adhesion, in addition to good step coverage, of the tungsten nitride layer, to underlying or adjacent insulator layers. The high resistivity, tungsten nitride layer is then converted to a lower resistivity tungsten layer, via a rapid thermal anneal procedure, performed in an argon ambient, or in vacuum.
    Type: Grant
    Filed: March 17, 2000
    Date of Patent: August 14, 2001
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Ming-Hsing Tsai, Sheng-Hsiung Cheu