Patents by Inventor Sheng-Hsiung Tsao

Sheng-Hsiung Tsao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Contact pad supporting structure and integrated circuit for crack suppresion
    Patent number: 8080881
    Abstract: The invention provides a contact pad supporting structure. The contact pad supporting structure includes an underlying first conductive plate and an overlying second conductive plate, wherein the first and second conductive plates are separated by a first dielectric layer. A plurality of circular ring-shaped via plug groups comprising a plurality of circular ring-shaped via plugs is through the first dielectric layer, electrically connecting to the first and second conductive plates. All of the circular ring-shaped via plugs of each of the circular ring-shaped via plug groups are disorderly arranged.
    Type: Grant
    Filed: April 28, 2009
    Date of Patent: December 20, 2011
    Assignee: Vanguard International Semiconductor Corporation
    Inventors: Sheng-Hsiung Tsao, Yung-Lung Lin, Yun-Lung Huang
  • CONTACT PAD SUPPORTING STRUCTURE AND INTEGRATED CIRCUIT
    Publication number: 20100176515
    Abstract: The invention provides a contact pad supporting structure. The contact pad supporting structure includes an underlying first conductive plate and an overlying second conductive plate, wherein the first and second conductive plates are separated by a first dielectric layer. A plurality of circular ring-shaped via plug groups comprising a plurality of circular ring-shaped via plugs is through the first dielectric layer, electrically connecting to the first and second conductive plates. All of the circular ring-shaped via plugs of each of the circular ring-shaped via plug groups are disorderly arranged.
    Type: Application
    Filed: April 28, 2009
    Publication date: July 15, 2010
    Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Sheng-Hsiung TSAO, Yung-Lung LIN, Yun-Lung HUANG