Patents by Inventor Sheng Hung

Sheng Hung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250236240
    Abstract: A mirror frame of a towing mirror includes a mounting seat, an engaging member, and a retaining set. The mounting seat includes a seat body, at least one first inverted hook, and an engaging structure that has a stopping portion. The stopping portion and the seat body cooperatively define a passage. The engaging member is detachably mounted to the engaging structure and has an engaging plate adapted for engaging the engaging structure. The engaging plate has a hook portion adapted for passing through the passage and engaging the stopping portion. The retaining set has a resilient arm and a guiding block adapted for pushing the resilient arm. The resilient arm is formed with a protrusion. The guiding block has a guiding inclined surface that faces the protrusion and that presses the protrusion to make the resilient arm resiliently bend.
    Type: Application
    Filed: September 9, 2024
    Publication date: July 24, 2025
    Applicant: KEN SEAN INDUSTRIES CO., LTD.
    Inventor: Sheng-Hung CHEN
  • Patent number: 12369327
    Abstract: The present disclosure relates to a ferroelectric memory device that includes a bottom electrode, a ferroelectric structure overlying the bottom electrode, and a top electrode overlying the ferroelectric structure where the bottom electrode includes molybdenum.
    Type: Grant
    Filed: March 28, 2022
    Date of Patent: July 22, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Harry-Hak-Lay Chuang, Fu-Chen Chang, Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu
  • Patent number: 12360933
    Abstract: There is provided a detection system including a detection device and a post processor. The detection device and the post processor exchange data therebetween using a predetermined communication protocol. The detection device outputs at least one of calculated data and raw data to the post processor in response to each polling according to a request from the post processor. The raw data is provided to the post processor for the machine learning.
    Type: Grant
    Filed: December 3, 2021
    Date of Patent: July 15, 2025
    Assignee: PIXART IMAGING INC.
    Inventors: Yao-Hsuan Lin, Bo-Yi Chang, Sheng-Hung Wang, Yu-Chen Fu
  • Publication number: 20250228145
    Abstract: A method of fabricating a resistive random-access memory (RRAM) structure includes forming a first patterned metallization layer; disposing a dielectric layer on the first patterned metallization layer; and etching openings exposing first contact portions of the first patterned metallization layer, each opening having an annular tapered sidewall tapering inward to a corresponding one of the first contact portions.
    Type: Application
    Filed: January 10, 2024
    Publication date: July 10, 2025
    Inventors: Tzu-Yu Chen, Sheng-Hung Shih, Kuo-Chi Tu, Wen-Ting Chu
  • Publication number: 20250228148
    Abstract: A resistive memory device includes a bottom electrode, a switching layer disposed over the bottom electrode, a top electrode disposed over the switching layer, and an auxiliary layer disposed between the switching layer and one of the top electrode and the bottom electrode. The one of the top electrode and the bottom electrode includes a metal and is a relatively inert electrode in comparison with the other one of the top electrode and the bottom electrode. The auxiliary layer includes a nitride of the metal.
    Type: Application
    Filed: January 4, 2024
    Publication date: July 10, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Fu-Chen CHANG, Wen-Ting CHU, Kuo-Chi TU, Sheng-Hung SHIH, Chu-Jie HUANG
  • Patent number: 12356630
    Abstract: A semiconductor device includes a random access memory (RAM) structure and a dielectric layer. The RAM structure is over a substrate and includes a bottom electrode layer, a ferroelectric layer over the bottom electrode layer, and a top electrode layer over the ferroelectric layer. The dielectric layer is over the substrate and laterally surrounds a lower portion of the RAM structure. From a cross-sectional view, the bottom electrode layer of the RAM structure has a lateral portion and a vertical portion, and the vertical portion upwardly extends from the lateral portion to a position higher than a top surface of the dielectric layer.
    Type: Grant
    Filed: November 3, 2023
    Date of Patent: July 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Fu-Chen Chang, Kuo-Chi Tu, Tzu-Yu Chen, Sheng-Hung Shih
  • Publication number: 20250218875
    Abstract: A semiconductor device includes a first semiconductor component, a second semiconductor component, and a damage detection structure. The first semiconductor component includes a first edge region. The second semiconductor component is stacked below the first semiconductor component and includes a second edge region. The damage detection structure includes a plurality of first conductive paths and a plurality of second conductive paths. The first conductive paths are disposed in the first edge region. The second conductive paths are disposed in the second edge region and are electrically coupled to the first conductive paths.
    Type: Application
    Filed: November 27, 2024
    Publication date: July 3, 2025
    Inventors: Cing-Yao JHAN, Chien-Kai HUANG, Ting-Chen SHIH, Sheng-Hung FAN, Tien-Yu LU, Shang-Yu TSAI, Man-Ling LU, Chu-Wei HU
  • Publication number: 20250216413
    Abstract: A position fine-tuning structure includes a first plate, a second plate and a guide slider. A top surface of the first plate is recessed with a first linear groove. A bottom surface of the second plate is recessed with a second linear groove. The bottom surface of the second plate directly covers the top surface of the first plate, so that the second linear groove is orthogonal to and in communication with to the first linear groove. The guide slider includes a first pillar and a second pillar which are overlapped with and orthogonal to each other. The first pillar is parallel to the first linear groove and slidably located within the first linear groove, and the second pillar is parallel to the second linear groove and slidably located within the second linear groove.
    Type: Application
    Filed: October 8, 2024
    Publication date: July 3, 2025
    Inventors: Sheng-Hung WANG, Po-Hsiang CHANG, Zhe-Min LIAO
  • Publication number: 20250177069
    Abstract: A surgical robot arm control system and a surgical robot arm control method are provided. The surgical robot arm control system includes a surgical robot arm, a spatial positioning information acquisition unit, a depth image acquisition unit, and a processor. The spatial positioning information acquisition unit is configured to acquire spatial coordinate data. The depth image acquisition unit is configured to acquire a panoramic depth image. The processor performs image recognition on the panoramic depth image to recognize the surgical robot arm and locates a position of the surgical robot arm based on the spatial coordinate data. The processor defines an environmental space according to the position of the surgical robot arm and plans a movement path of the surgical robot arm in the environmental space. The processor controls the surgical robot arm according to the movement path of the surgical robot arm.
    Type: Application
    Filed: December 5, 2023
    Publication date: June 5, 2025
    Applicant: Metal Industries Research & Development Centre
    Inventors: Bo-Wei Pan, Sheng-Hung Yang, Wei Han Hsieh
  • Patent number: 12314028
    Abstract: An inductor driving device includes multiple switching elements and a control circuit, wherein an inductor is driven according to switching of the multiple switching elements. The control circuit is arranged to generate a control signal for controlling the multiple switching elements. In a first mode, the control signal has a constant frequency. In a second mode, the control circuit adjusts a frequency of the control signal and continuously changes a current direction of the inductor, to generate one of multiple audio signals through the inductor.
    Type: Grant
    Filed: August 18, 2023
    Date of Patent: May 27, 2025
    Assignee: Elite Semiconductor Microelectronics Technology Inc.
    Inventors: Ming-Fu Tsai, Sheng-Hung Hsu
  • Publication number: 20250120097
    Abstract: A memory device includes a two-dimensional array of access transistors located on a semiconductor substrate; metal interconnect structures embedded in dielectric material layers and electrical connected to electrical nodes of the access transistors; and a two-dimensional array of resistive memory structures embedded in the dielectric material layers. The metal interconnect structures include two first source lines located at a first metal line level and laterally extending along a first horizontal direction; a second source line located at a second metal line level and laterally extending along the first horizontal direction; and a vertical connection structure including a plurality of interconnection via structures and at least one line-level metal structure and providing a vertical electrical connection between the two first source lines and the second source line.
    Type: Application
    Filed: April 8, 2024
    Publication date: April 10, 2025
    Inventors: Sheng-Hung Shih, Kuo-Chi Tu, Wan-Chen Chen, Tzu-Yu Chen, Wen-Ting Chu
  • Publication number: 20250072003
    Abstract: A method for manufacturing a semiconductor device includes: forming an etch stop layer with an opening; forming a barrier layer on the etch stop layer to fill the opening, the barrier layer including a layer portion disposed on the etch stop layer and an insert portion protruding from the layer portion to be inserted into the opening of the etch stop layer; forming a bottom electrode layer on the layer portion of the barrier layer opposite to the etch stop layer; forming a ferroelectric layer on the bottom electrode layer opposite to the barrier layer; and forming a top electrode layer on the ferroelectric layer opposite to the bottom electrode layer.
    Type: Application
    Filed: August 23, 2023
    Publication date: February 27, 2025
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzu-Yu CHEN, Chu-Jie HUANG, Yu-Wen LIAO, Sheng-Hung SHIH, Kuo-Chi TU
  • Patent number: 12238934
    Abstract: A method for fabricating a semiconductor device is provided. The method includes depositing a ferroelectric layer over the substrate; performing a first ionized physical deposition process to deposit a top electrode layer over the ferroelectric layer; patterning the top electrode layer into a top electrode; and patterning the ferroelectric layer to into a ferroelectric element below the top electrode.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Tzu-Yu Chen, Hsin-Yu Lai, Sheng-Hung Shih, Fu-Chen Chang, Kuo-Chi Tu
  • Publication number: 20250060724
    Abstract: An inductor driving device includes multiple switching elements and a control circuit, wherein an inductor is driven according to switching of the multiple switching elements. The control circuit is arranged to generate a control signal for controlling the multiple switching elements. In a first mode, the control signal has a constant frequency. In a second mode, the control circuit adjusts a frequency of the control signal and continuously changes a current direction of the inductor, to generate one of multiple audio signals through the inductor.
    Type: Application
    Filed: August 18, 2023
    Publication date: February 20, 2025
    Applicant: Elite Semiconductor Microelectronics Technology Inc.
    Inventors: Ming-Fu Tsai, Sheng-Hung Hsu
  • Publication number: 20250063956
    Abstract: A semiconductor structure includes a ferroelectric layer and a semiconductor layer. Thee ferroelectric layer has a first surface and a second surface opposite to the first surface. The semiconductor layer is formed on one of the first surface and the second surface.
    Type: Application
    Filed: August 18, 2023
    Publication date: February 20, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Tzu-Yu CHEN, Sheng-Hung SHIH, Kuo-Chi TU, Wen-Ting CHU, Kuo-Ching HUANG, Harry-Haklay CHUANG
  • Publication number: 20250048647
    Abstract: In some embodiments, the present disclosure relates to a method of forming an integrated chip including forming a ferroelectric layer over a bottom electrode layer, forming a top electrode layer over the ferroelectric layer, performing a first removal process to remove peripheral portions of the bottom electrode layer, the ferroelectric layer, and the top electrode layer, and performing a second removal process using a second etch that is selective to the bottom electrode layer and the top electrode layer to remove portions of the bottom electrode layer and the top electrode layer, so that after the second removal process the ferroelectric layer has a surface that protrudes past a surface of the bottom electrode layer and the top electrode layer.
    Type: Application
    Filed: October 21, 2024
    Publication date: February 6, 2025
    Inventors: Chih-Hsiang Chang, Kuo-Chi Tu, Sheng-Hung Shih, Wen-Ting Chu, Tzu-Yu Chen, Fu-Chen Chang
  • Publication number: 20250029354
    Abstract: An image segmentation method includes following steps. An input image is provided to a prompter model for generating a first prompt indictor according to a task type of the prompter model. A prompt enhancement procedure, with reference to the task type of the prompter model, is performed to the first prompt indictor for generating a second prompt indictor. The prompt enhancement procedure includes converting a location, a size or a prompt type of the first prompt indictor into the second prompt indictor with reference to the task type. The input image and the second prompt indictor are provided to a segmentation foundation model for generating an output segmentation mask on the input image according to the second prompt indictor.
    Type: Application
    Filed: July 19, 2024
    Publication date: January 23, 2025
    Inventors: Sheng-Hung FAN, Yu-Shao PENG
  • Patent number: 12203140
    Abstract: The present invention discloses a set of novel epigenetic biomarkers for early prediction, treatment response, recurrence and prognosis monitoring of a breast cancer. Aberrant methylation of the genes can be detected in tumor tissues and plasma samples from breast cancer patients but not in normal healthy individual. The present disclosure also discloses primers and probes used herein.
    Type: Grant
    Filed: May 8, 2019
    Date of Patent: January 21, 2025
    Assignee: EG BIOMED CO., LTD.
    Inventors: Ruo-Kai Lin, Chin-Sheng Hung, Sheng-Chao Wang, Yu-Mei Chung, Chih-Ming Su
  • Patent number: D1063925
    Type: Grant
    Filed: January 21, 2021
    Date of Patent: February 25, 2025
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Po-Yang Chien, Hao-Jen Fang, Wei-Yi Chang, Chun-Chieh Chen, Chen-Cheng Wang, Chih-Wen Chiang, Sheng-Hung Lee
  • Patent number: D1072806
    Type: Grant
    Filed: January 24, 2021
    Date of Patent: April 29, 2025
    Assignee: COMPAL ELECTRONICS, INC.
    Inventors: Po-Yang Chien, Hao-Jen Fang, Wei-Yi Chang, Chun-Chieh Chen, Chen-Cheng Wang, Chih-Wen Chiang, Sheng-Hung Lee