Patents by Inventor Sheng-I Chen

Sheng-I Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240099695
    Abstract: A capacitive ultrasonic transducer device includes a substrate, a first capacitive structure, a second capacitive structure, a first film structure and a second film structure. The first capacitive structure is disposed on the substrate, and includes a first electrode and a second electrode. A first gap and a dielectric layer are located between the first electrode and the second electrode. The second capacitive structure is disposed on the substrate, and includes a third electrode and a fourth electrode. A second gap is located between the third electrode and the fourth electrode. The first film structure is configured to seal the first gap. The second film structure is connected to the third electrode and the fourth electrode, and configured to seal the second gap. A first width between the first electrode and the second electrode is different from a second width of the second gap.
    Type: Application
    Filed: December 18, 2022
    Publication date: March 28, 2024
    Inventors: Sheng-Shian LI, Hung-Yu CHEN, Ming-Huang LI, Po-I SHIH
  • Publication number: 20230147897
    Abstract: A detection device including a substrate, a switch element, a photoelectric element, and a scintillator is provided. The switch element is disposed on the substrate. The photoelectric element is disposed on the substrate and coupled to the switch element. The photoelectric element includes a semiconductor, and the semiconductor includes a monocrystalline material or a polycrystalline material. The scintillator is at least partially overlapped with the photoelectric element in a top view direction of the detection device.
    Type: Application
    Filed: October 20, 2022
    Publication date: May 11, 2023
    Applicant: InnoCare Optoelectronics Corporation
    Inventors: Hsin-Hung Lin, Sheng-I Chen
  • Patent number: 11618935
    Abstract: A manufacturing method of an aluminum alloy with high thermal conductivity comprising steps of: preparing materials including pure aluminum ingots, silicon alloy, iron alloy and magnesium alloy; melting the pure aluminum ingots in a reverberatory furnace at two stages, melting, stirring, sampling for compositions determination; transferring the molten aluminum into a holding furnace, putting the ingots in, melting, removing slag, determining the compositions; calculating amount of the alloys to be added; melting the silicon alloy and iron alloy in the molten aluminum and analyzing the compositions; adding the ingots to cool the temperature of the molten aluminum down and then adding the magnesium alloy, confirming and making corrections if insufficient compositions; degassing and purifying the molten aluminum by adding drossing flux in the furnace and making a final compositions determination; transferring the molten aluminum into online degassing system to degas and purify; casting the molten aluminum into a
    Type: Grant
    Filed: March 30, 2022
    Date of Patent: April 4, 2023
    Assignee: CHARNG CHYI ALUMINUM CO., LTD.
    Inventor: Sheng-I Chen