Abstract: A method for testing LEDs includes: Step 1: providing a wafer including a plurality of LEDs and selecting N LEDs from the plurality of LEDs to form an LED group; Step 2: selecting n LEDs from the LED group, where 1<n<N, and testing the n LEDs at a time to obtain a subgroup optical parameter of the LED group; Step 3: performing the Step 2 on the N LEDs repeatedly and alternately for another n LEDs in the LED group to obtain a plurality of the subgroup optical parameters; and Step 4: obtaining an optical parameter of each of the LEDs in the LED group from the plurality of the subgroup optical parameters.

Abstract: A light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and the second light-emitting structure unit includes a second sidewall; an isolation layer formed on the first sidewall and the second sidewall, including a first edge on the first light-emitting structure unit and wherein the first edge has an acute angle in a cross-sectional view; and an electrical connection formed on the isolation layer, the first light-emitting structure unit and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall and the second sidewall are inclined; and wherein the electrical connection includes a first part on the first light-emitting structure unit, and the first part do

Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

Abstract: A method for testing LEDs includes: Step 1: providing a wafer including a plurality of LEDs and selecting N LEDs from the plurality of LEDs to form an LED group; Step 2: selecting n LEDs from the LED group, where 1<n<N, and testing the n LEDs at a time to obtain a subgroup optical parameter of the LED group; Step 3: performing the Step 2 on the N LEDs repeatedly and alternately for another n LEDs in the LED group to obtain a plurality of the subgroup optical parameters; and Step 4: obtaining an optical parameter of each of the LEDs in the LED group from the plurality of the subgroup optical parameters.

Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

Abstract: Disclosed herein is a light-emitting device.

Abstract: Disclosed herein is a light-emitting device.

Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, comprising a first part formed on the first light-emitting unit or the second light-emitting unit, and a second part conformably formed on the trench covering the bottom portion and sidewalls of the first light-emitting unit and the second light-emitting unit; and an electrical connection, electrically connecting the first light-emitting unit and the second light-emitting unit, comprising a bridging portion formed on the second part of the insulating layer, and only covering a portion of the trench; and a joining portion, extending from the bridging portion and formed on the first part of the insulating layer; wherein the bridging portion is wider than the joining portion in a top view.

Abstract: Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, conformably formed on the trench and covering the bottom portion and sidewalls of the first and the second light-emitting units; and an electrical connection, formed on the insulating layer and electrically connecting the first and the second light-emitting units. The electrical connection includes a bridging portion covering the trench and a joining portion extending from the bridging portion and formed on the first and the second light-emitting units; wherein the bridging portion is wider than the joining portion; wherein a part of the insulating layer is formed under the joining portion.

Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit, comprising a bottom portion exposing the substrate; an insulating layer arranged on the trench, conformably covering the bottom portion and sidewalls of the first unit and the second unit; and an electrical connection, conformably covering the insulating layer, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion covers the trench, and the joining portion covers the first unit and the second unit.

Abstract: A light-emitting structure, comprising a substrate; a first unit and a second unit, separately formed on the substrate; a trench between the first unit and the second unit; and an electrical connection, electrically connecting the first unit and the second unit and comprising a bridging portion and a joining portion extending from the bridging portion, wherein the bridging portion is wider than the joining portion and the bridging portion is configured to cover the trench, and the joining portion is configured to cover first unit and the second unit.

Abstract: An embodiment of the present application discloses a light-emitting structure, comprising a substrate, a first unit and a second unit separately form on the substrate; a trench formed between the first unit and the second unit, and having a bottom portion exposing the substrate, a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection connecting the first unit and the second unit and covering the first unit, the second unit and the less steep sidewall; wherein the sidewalls directly connect to the bottom portion, and the steeper sidewall is devoid of the electrical connection covering.

Abstract: A method of patterning a hard mask layer for defining a deep trench is described. A substrate formed with an isolation structure therein is provided. A hard mask layer is formed over the substrate provided. A patterned photoresist layer is formed over the hard mask layer, having therein a deep-trench opening pattern over the isolation structure. An etching gas not containing hydrogen is used to etch the hard mask layer with the patterned photoresist layer as a mask and thereby transfer the deep-trench opening pattern to the hard mask layer.

Abstract: A method of patterning a hard mask layer for defining a deep trench is described. A substrate formed with an isolation structure therein is provided. A hard mask layer is formed over the substrate provided. A patterned photoresist layer is formed over the hard mask layer, having therein a deep-trench opening pattern over the isolation structure. An etching gas not containing hydrogen is used to etch the hard mask layer with the patterned photoresist layer as a mask and thereby transfer the deep-trench opening pattern to the hard mask layer.

Abstract: An embodiment of the present application discloses a light-emitting structure, comprising a first unit; a second unit; a trench formed between the first unit and the second unit, and having a less steep sidewall and a steeper sidewall steeper than the less steep sidewall; and an electrical connection arranged on the less steep sidewall.

Abstract: A wafer having a metal layer inclding salicide regions and unreacted metal regions disposed thereon is provided. Subsequently, an acidic solution is provided to remove the unreacted metal regions. Following that, a cold APM solution is used to remove particles subsequent to using the acidic solution to remove the unreacted metal regions. Finally, a mega sonic energy is applied to the wafer together with the cold APM solution or separately.