Patents by Inventor Sheng-Kai Jou

Sheng-Kai Jou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacturing a semiconductor device
    Patent number: 12165873
    Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.
    Type: Grant
    Filed: May 9, 2022
    Date of Patent: December 10, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: En-Ping Lin, Yu-Ling Ko, I-Chung Wang, Yi-Jen Chen, Sheng-Kai Jou, Chih-Teng Liao
  • METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    Publication number: 20220270886
    Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.
    Type: Application
    Filed: May 9, 2022
    Publication date: August 25, 2022
    Inventors: En-Ping LIN, Yu-Ling KO, I-Chung WANG, Yi-Jen CHEN, Sheng-Kai JOU, Chih-Teng LIAO
  • Method of manufacturing a semiconductor device
    Patent number: 11328931
    Abstract: In a method of manufacturing a semiconductor device, a mask pattern is formed over a target layer to be etched, and the target layer is etched by using the mask pattern as an etching mask. The etching is performed by using an electron cyclotron resonance (ECR) plasma etching apparatus, the ECR plasma etching apparatus includes one or more coils, and a plasma condition of the ECR plasma etching is changed during the etching the target layer by changing an input current to the one or more coils.
    Type: Grant
    Filed: February 12, 2021
    Date of Patent: May 10, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: En-Ping Lin, Yu-Ling Ko, I-Chung Wang, Yi-Jen Chen, Sheng-Kai Jou, Chih-Teng Liao