Abstract: A modulator heater structure may include a plurality of regions having different thicknesses. For example, a heater ring of the modulator heater structure may have a first thickness. A heater pad of the modulator heater structure, that is configured to provide an electrical current to the heater ring, may have a second thickness that is greater than the first thickness. The lesser thickness of the heater ring of the modulator heater structure provides high electrical resistance in the heater ring, which enables the heater ring to quickly and efficiently generate heat. The greater thickness of the heater pad provides low electrical resistance in the second region, which enables the electrical current to be efficiently provided through the heater pad to the heater ring with reduced heat dissipation in the hear pad due to the lower electrical current dissipation in the heater pad.

Abstract: A semiconductor structure includes a substrate, a piezoelectric layer, and a stress structure. The substrate includes a first surface and a second surface, wherein a portion of the substrate proximal to the first surface defines a diaphragm. The piezoelectric layer is disposed over the first surface of the substrate and surrounds the diaphragm, wherein the piezoelectric layer includes a first portion and a second portion arranged along a periphery of the diaphragm from a top view. The stress structure includes a plurality of dielectric layers disposed over the piezoelectric layer and between the substrate and the piezoelectric layer, and a total thickness of a first portion of the stress structure overlapping the first portion of the piezoelectric layer is different from a total thickness of a second portion of the stress structure overlapping the second portion of the piezoelectric layer. A method for manufacturing a semiconductor structure is also provided.

Abstract: A semiconductor device and a method are provided. The semiconductor device includes a first semiconductor component, a bonding layer and a second semiconductor component. The first semiconductor component includes a first transistor formed on a substrate and a second transistor formed on the substrate and separated from the first transistor. The bonding layer is provided on the first semiconductor component. The second semiconductor component is provided on the bonding layer and includes an acoustic transducer. The acoustic transducer is controlled by the first transistor and the second transistor to execute a photoacoustic sensing. The acoustic transducer comprises a space gap and a least a portion of the space gap is surrounded by the bonding layer.

Abstract: The present invention provides a micro tactility-simulating sensing device, including: a chip including a first top surface and a first inductor, wherein the first top surface has wiring through holes configured to allow an external circuit to connect to the first inductor, and the first top surface is a flat surface except the wiring through holes; a magnetic rigid body coupled with the first inductor to allow the first inductor to sense a magnetic flux passing therethrough, and configured to receive a tactile load; and a polymer configured between the chip and the magnetic rigid body to have a characteristic distance therebetween, wherein the characteristic distance and the magnetic flux have a functional relationship. The micro tactility-simulating sensing device of the present invention can effectively increase the magnitude of the measured signal and provide two different ways to read the signal.

Abstract: A semiconductor device and method of forming such a device includes a MEMS component including one or more MEMS pixels and having a MEMS membrane substrate and a MEMS sidewall. The semiconductor device includes an analog circuit component bonded to the MEMS component, and which includes at least one analog CMOS component within an analog circuit insulative layer, and an analog circuit component substrate. The semiconductor device includes an HPC component bonded to the analog circuit component substrate. The HPC component includes at least one HPC metal component disposed within an HPC insulative layer, at least one bond pad, at least one bond pad via connecting the at least one bond pad and the at least one HPC metal component, and an HPC substrate. Additionally, the semiconductor device includes a DTC component bonded to the HPC substrate, and which includes a DTC die disposed in a DTC substrate.

Abstract: A method for manufacturing a semiconductor structure is provided. The method may include several operations. A piezoelectric capacitor is formed over a substrate, wherein the piezoelectric capacitor includes a metal electrode. An intermediate layer is formed on the metal electrode, and is patterned using a first mask layer as a mask. A metal layer is formed on the intermediate layer, wherein the metal layer electrically connects to the metal electrode. The metal layer is patterned using a second mask layer, wherein the intermediate layer is within a coverage area of the metal layer from a top-view perspective after the patterning of the metal layer. A semiconductor structure thereof is also provided.

Abstract: The present invention provides a micro tactility-simulating sensing device, including: a chip including a first top surface and a first inductor, wherein the first top surface has wiring through holes configured to allow an external circuit to connect to the first inductor, and the first top surface is a flat surface except the wiring through holes; a magnetic rigid body coupled with the first inductor to allow the first inductor to sense a magnetic flux passing therethrough, and configured to receive a tactile load; and a polymer configured between the chip and the magnetic rigid body to have a characteristic distance therebetween, wherein the characteristic distance and the magnetic flux have a functional relationship. The micro tactility-simulating sensing device of the present invention can effectively increase the magnitude of the measured signal and provide two different ways to read the signal.