Abstract: Some implementations described herein provide a reticle cleaning device and a method of use. The reticle cleaning device includes a support member configured for extension toward a reticle within an extreme ultraviolet lithography tool. The reticle cleaning device also includes a contact surface disposed at an end of the support member and configured to bond to particles contacted by the contact surface. The reticle cleaning device further includes a stress sensor configured to measure an amount of stress applied to the support member at the contact surface. During a cleaning operation in which the contact surface is moving toward the reticle, the stress sensor may provide an indication that the amount of stress applied to the support member satisfies a threshold. Based on satisfying the threshold, movement of the contact surface and/or the support member toward the reticle ceases to avoid damaging the reticle.

Abstract: Embodiments of the invention include a method for fabricating a semiconductor device and the resulting structure. A metal line is formed on a bottom liner, a sacrificial hardmask on a top surface of the metal line. Portions of the sacrificial hardmask are selectively removed that that do not correspond a desired location of a top via. The remaining sacrificial hardmask is replaced with the top via, the top via and the metal line each tapered such that a width at each respective bottom surface is greater than a width of each respective top surface.

Abstract: A semiconductor structure provides a spacer directly contacting a sidewall of portion of a hardmask material, a sidewall of a portion of a backside interlayer dielectric material, and a sidewall of a portion of a semiconductor substrate on the portion of a hardmask material. The spacer resides directly below and contacts a liner of a shallow trench isolation that is between a passive device region and an active device region. The spacer prevents undercutting of the semiconductor substrate in the protected region between the active device region and the passive device region during backside contact formation.

Abstract: A semiconductor structure is provided that includes stacked field effect transistors (FETs) that have different shaped inner spacers. Notably, the stacked FETs include a first FET having a horizontal inner spacer and a second FET stacked over the first FET and having a fork shaped inner spacer. The present application also provides a method of forming such as a semiconductor structure. The method avoids gate dielectric spacer fang formation in the source/drain regions and thus avoids problems with forming the stacked nanosheet structure of the first FET.

Abstract: Embodiments of present invention provide a method of forming a semiconductor structure. The method includes forming a first set of nanosheets and a second set of nanosheets on top of the first set of nanosheets, wherein the first set of nanosheets has an uppermost nanosheet and the second set of nanosheets has a lowermost nanosheet, the lowermost nanosheet being separated from the uppermost nanosheet by a first gap; forming a conformal liner covering the first set of nanosheets and the first gap; covering a first portion of the conformal liner at the first gap with a protective stud; selectively removing a second portion of the conformal liner from end surfaces of the first set of nanosheets; and forming source/drain at the end surfaces of the first set of nanosheets. A structure formed thereby is also provided.

Abstract: A semiconductor device comprises at least one epitaxial source/drain region, and a dielectric layer disposed in a trench in the at least one epitaxial source/drain region. The dielectric layer comprises one of a material with a negative coefficient of thermal expansion and a material with a positive coefficient of thermal expansion.

Abstract: A microelectronic structure includes a first nanosheet transistor that includes a first source/drain and a second source/drain. The first source/drain and the second source/drain are doped with a first material. A second nanosheet transistor that includes a third source/drain and fourth source/drain. The third source/drain and the fourth source/drain are doped with a second material. The first material and the second material are different. A placeholder is located on a backside surface of the second source/drain and the placeholder is doped with a third material. The third material is the same as the first material.

Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.

Abstract: A microelectronic structure that includes a nanosheet transistor that includes a first source/drain and a second source/drain. A trench epi extending from a backside surface of the first source/drain. A backside contact that wraps around the trench epi and is in contact with a backside surface of the first source/drain.

Abstract: A microelectronic structure that includes a stacked nanosheet FET transistor that includes an upper nanosheet transistor and a lower nanosheet transistor. The upper nanosheet transistor includes an upper source/drain and the upper source/drain includes an upper tip that is pointed in a first direction. The lower nanosheet transistor includes a lower source/drain and the lower source/drain includes a lower tip pointed in a second direction. The first direction is different than the second direction.

Abstract: A system and method for dynamically controlling a temperature of a thermostatic reticle. A thermostatic reticle assembly that includes a reticle, temperature sensors located in proximity to the reticle, and one or more heating elements. A thermostat component that is in communication with the temperature sensors and the heating element monitors the current temperature of the reticle relative to a steady-state temperature. In response to the current temperature of the reticle being lower than the steady-state temperature, the heating elements are activated to preheat the reticle to the steady-state temperature.

Abstract: A system for monitoring and controlling an EUV light source includes a first temperature sensor, a signal processor, and a process controller. The first temperature sensor includes a portion inserted into a space surrounded by a plurality of vanes through a vane of the plurality of vanes, and obtains an ambient temperature that decreases with time as a function of tin contamination coating on the inserted portion. The signal processor determines an excess tin debris deposition on the vane based on the obtained chamber ambient temperature. The process controller activates a vane cleaning action upon being informed of the excess tin debris deposition by the signal processor, thereby improving availability of the EUV light source tool and reducing risks of tin pollution on other tools such as a reticle.

Abstract: The present invention discloses a non-contact AC/DC sensing probe and a sensing method and application thereof. The non-contact AC/DC sensing probe adopts a Hall sensing module, breaks through the limitation that a traditional induction coil can sense only an AC current, and can directly perform AC/DC sensing on a single wire or a cable composed of two or more wires, so as to allow the target wire to generate an electromagnetic signal to be collected by the Hall sensing module, and sensing of electrical parameters, including a current, a voltage, a frequency, a duty cycle, a phase, a harmonic, a frequency-conversion signal, etc. is realized without peeling and cable branching, so that the non-contact AC/DC current sensing probe is simple and convenient to operate, can be applied to measuring instruments such as a test pen, a multimeter and a clamp meter, and has a wide range of applications.

Abstract: The present invention discloses a non-contact alternating current sensing probe and a sensing method and application thereof. Alternating current measurement can be directly performed on a single wire or a cable composed of two or more wires. During detection, the detection port is adjusted to a better measurement position of a target wire through position adjustment, so that an electromagnetic signal generated by the target wire passes through the detection port and enters the shielding space to be collected by the induction coil, sensing of alternating current-related electrical parameters, including a current, a voltage, a frequency, a duty cycle, a phase, a harmonic, a frequency-conversion signal, etc. is realized, and the probe can work for a long time, cannot lead to the problem of inaccuracy caused by heat, can be applied to measuring instruments such as a test pen, a multimeter and a clamp meter, and has large application prospects.

Abstract: A semiconductor device includes first nanosheet structures at an NFET region of a semiconductor substrate and second nanosheet structures at a PFET region. A first gate wraps around the first nanosheet structures and a second gate wraps around the second plurality of nanosheet structures. A dielectric bar is between the first nanosheet structures and the second nanosheet structures. The semiconductor device further includes a first backside contact in the NFET region and a second backside contact in the PFET region. The first backside contact includes a first backside contact extension that extends to a first side of the at least one dielectric bar. The second backside contact includes a second backside contact extension that extends to an opposing second side of the at least one dielectric bar. One or more backside power elements are on one or both of the first backside contact extension and the second contact extension.

Abstract: A method includes irradiating debris deposited in an extreme ultraviolet (EUV) lithography system with laser, controlling one or more of a wavelength of the laser or power of the laser to selectively vaporize the debris and limit damage to the EUV) lithography system, and removing the vaporized debris.

Abstract: Some implementations described herein provide a reticle cleaning device and a method of use. The reticle cleaning device includes a support member configured for extension toward a reticle within an extreme ultraviolet lithography tool. The reticle cleaning device also includes a contact surface disposed at an end of the support member and configured to bond to particles contacted by the contact surface. The reticle cleaning device further includes a stress sensor configured to measure an amount of stress applied to the support member at the contact surface. During a cleaning operation in which the contact surface is moving toward the reticle, the stress sensor may provide an indication that the amount of stress applied to the support member satisfies a threshold. Based on satisfying the threshold, movement of the contact surface and/or the support member toward the reticle ceases to avoid damaging the reticle.

Abstract: An electronic device is provided, which comprises: a substrate comprising an active region and a peripheral region; a common conductive line disposed corresponding to the peripheral region of the substrate; and a scan line disposed on the substrate, wherein the scan line is electrically connected to a first static discharge conductive line through a first electrostatic protection circuit in the peripheral region, wherein the common conductive line is electrically separated from the first static discharge conductive line; wherein in a top view of the substrate, there is a first distance between the common conductive line and the first static discharge conductive line, and the first distance is greater than or equal to 1.5 ?m and less than or equal to 12 mm.

Abstract: In a method of generating extreme ultraviolet (EUV) radiation in a semiconductor manufacturing system one or more streams of a gas is directed, through one or more gas outlets mounted over a rim of a collector mirror of an EUV radiation source, to generate a flow of the gas over a surface of the collector mirror. The one or more flow rates of the one or more streams of the gas are adjusted to reduce an amount of metal debris deposited on the surface of the collector mirror.

Abstract: Embodiments are disclosed for a semiconductor structure. The semiconductor structure includes a field effect transistor (FET). The FET includes a source/drain (S/D) epitaxy and a metal gate. Additionally, the semiconductor structure includes a backside epitaxy in electrical contact with the S/D epitaxy. Further, the backside epitaxy includes a highly doped epitaxy. Additionally, the semiconductor structure includes a backside contact in electrical contact with the backside epitaxy. Further, the semiconductor structure includes a backside power distribution network in electrical contact with the backside contact.