Patents by Inventor Sheng KO

Sheng KO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DEEP TRENCH STRUCTURE FOR A CAPACITIVE DEVICE
    Publication number: 20250331203
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Application
    Filed: June 30, 2025
    Publication date: October 23, 2025
    Inventors: En-Shuo LIN, Sheng KO, Chi-Fu LIN, Che-Yi LIN, Clark LEE
  • Deep trench structure for a capacitive device
    Patent number: 12414314
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Grant
    Filed: April 28, 2023
    Date of Patent: September 9, 2025
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: En-Shuo Lin, Sheng Ko, Chi-Fu Lin, Che-Yi Lin, Clark Lee
  • DEEP TRENCH STRUCTURE FOR A CAPACITIVE DEVICE
    Publication number: 20230268378
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Application
    Filed: April 28, 2023
    Publication date: August 24, 2023
    Inventors: En-Shuo LIN, Sheng KO, Chi-Fu LIN, Che-Yi LIN, Clark LEE
  • Deep trench structure for a capacitive device
    Patent number: 11658206
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Grant
    Filed: November 13, 2020
    Date of Patent: May 23, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: En-Shuo Lin, Sheng Ko, Chi-Fu Lin, Che-Yi Lin, Clark Lee
  • DEEP TRENCH STRUCTURE FOR A CAPACITIVE DEVICE
    Publication number: 20220157929
    Abstract: A deep trench structure may be formed between electrodes of a capacitive device. The deep trench structure may be formed to a depth, a width, and/or an aspect ratio that increases the volume of the deep trench structure relative to a trench structure formed using a metal etch-stop layer. Thus, the deep trench structure is capable of being filled with a greater amount of dielectric material, which increases the capacitance value of the capacitive device. Moreover, the parasitic capacitance of the capacitive device may be decreased by omitting the metal etch-stop layer. Accordingly, the deep trench structure (and the omission of the metal etch-stop layer) may increase the sensitivity of the capacitive device, may increase the humidity-sensing performance of the capacitive device, and/or may increase the performance of devices and/or integrated circuits in which the capacitive device is included.
    Type: Application
    Filed: November 13, 2020
    Publication date: May 19, 2022
    Inventors: En-Shuo LIN, Sheng KO, Chi-Fu LIN, Che-Yi LIN, Clark LEE