Abstract: A rotary positioning apparatus includes a fixing base, a rotation mechanism, two driving modules and a carrier. The rotation mechanism is disposed on the fixing base, the first driving module is disposed on the fixing base and coupled to the rotation mechanism to drive the rotation mechanism rotating around a first rotation axis relatively to the fixing base. The carrier has plural accommodating slots on a circular-arc surface thereof and is pivoted to the rotation mechanism through a second rotation axis passing through the curvature center of the circular-arc surface and perpendicular to the first rotation axis, on which the curvature center is located. The second driving module is disposed on the rotation mechanism and coupled to the carrier to drive the carrier rotating around the second rotation axis relatively to the rotation mechanism. An automatic pick-and-place system and an operation method using the rotary positioning apparatus are also provided.

Abstract: A rotatable locating apparatus including a fixing base, a rotatable rack, a first driving module, a carrier, and a second driving module is provided. The rotatable rack is pivoted on the fixing base through a first rotation axis. The first driving module is coupled to the rotatable rack to drive the rotatable rack rotating with respect to the fixing base along the first rotation axis. The carrier is provided with accommodating slots on an arc surface of the carrier, and the carrier is pivoted on the rotatable rack through a second rotation axis. The second rotation axis passes through a curvature center of the arc surface and is perpendicular to the first rotation axis. The curvature center is located on the first rotation axis. The second driving module is coupled to the carrier to drive the carrier rotating with respect to the rotatable rack along the second rotation axis.

Abstract: A rotary positioning apparatus includes a fixing base, a rotation mechanism, two driving modules and a carrier. The rotation mechanism is disposed on the fixing base, the first driving module is disposed on the fixing base and coupled to the rotation mechanism to drive the rotation mechanism rotating around a first rotation axis relatively to the fixing base. The carrier has plural accommodating slots on a circular-arc surface thereof and is pivoted to the rotation mechanism through a second rotation axis passing through the curvature center of the circular-arc surface and perpendicular to the first rotation axis, on which the curvature center is located. The second driving module is disposed on the rotation mechanism and coupled to the carrier to drive the carrier rotating around the second rotation axis relatively to the rotation mechanism. An automatic pick-and-place system and an operation method using the rotary positioning apparatus are also provided.

Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.

Abstract: This prevent disclosure provides a plasma enhanced atomic layer deposition apparatus and the controlling method thereof. The plasma enhanced atomic layer deposition apparatus includes: a plurality of reaction chambers, each of the reaction chambers having a first reaction space and a second reaction space; an adjustable partition unit controlled to separate or communicate the first and the second reaction spaces; and a plurality of heating carriers respectively disposed in the plurality of reaction chambers. The method manipulates the movement of the partition plate, leading to separation or communication between the first and second reaction spaces, so as to avoid the interference or inter-reaction between process gases and the resultant particles contaminating the substrates.

Abstract: A method for depositing a microcrystalline silicon film is disclosed, including performing an open loop and close loop plasma enhanced deposition process without and with modulating process parameters, respectively. A film is deposited by the open loop plasma enhanced deposition process till a required film crystallinity and then performing a closed loop plasma enhanced deposition process which monitors species plasma spectrum intensities SiH* and H? and modulates process parameters of the plasma enhanced deposition process resulting in the species concentration stabilization which controls the intensities variation of SiH* and H? within an allowed range of a target value for improving film depositing rate.

Abstract: A system and a method for plasma enhanced thin film deposition are disclosed, in which the system comprises a plasma enhanced thin film deposition apparatus and a plasma process monitoring device. The plasma enhanced thin film deposition apparatus receives pulsed power and a reactive gas, whereby plasma discharging occurs to ionize the reactive gas into a plurality of radicals for thin film deposition. The plasma process monitoring device comprises an optical emission spectroscopy (OES) and a pulsed plasma modulation device, in which the OES detects spectrum intensities of the radicals and the pulsed plasma modulation device calculates a spectrum intensity ratio of the radicals so as to modulate the plasma duty time of pulsed power, thereby high deposition rate as well as real-time monitoring on thin film deposition quality can be achieved.

Abstract: The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.

Abstract: The present invention provides a fountain-type electroplating apparatus with functions of voltage detection and flow rectification, comprising: an electroplating tank, a rectification device, and an overflow tank, wherein the electroplating tank is positioned inside the overflow tank, and the rectification device is arranged under the electroplating tank, in addition, the electroplating tank is composed of a shell, a cathode electrode, and an mesh shaped anode. The apparatus of the present invention further comprises: a power supplier, a switcher, a plurality of detection circuits, and a plurality of connecting line, which is used for monitoring the same.

Abstract: A resin plunging apparatus for molding resin to seal an electronic device, in which a ball screw is rotated to move a movable base plate and two load elements at the movable base plate, enabling a plunger holder which is supported on the load elements to be moved with the movable base plate along guide bars, so that plungers which are securely mounted on the plunger holder are positively smoothly forced into cavities in upper and lower molds to plunge resin tablets.