Abstract: A semiconductor structure includes first metal lines located above at least one semiconductor device, and a continuous metal organic framework (MOF) material layer including lower MOF portions that are located between neighboring pairs of first metal lines and an upper MOF matrix portion that continuously extends over the first metal lines and connected to each of the lower MOF portions.

Abstract: According to a least one feature of the present disclosure, a method includes the steps: (a) providing a metallosilicate catalyst that has been used to catalyze a chemical reaction; and (b) heating the metallosilicate catalyst to a temperature from 200° C. to 425° C. for a period of 0.5 hours to 5 hours.

Abstract: A method includes the steps of (a) contacting a solvent having a Water Solubility of 1 g or greater per 100 g of water with a metallosilicate catalyst having an alumina to silica ratio from 5 to 1500; and (b) heating the metallosilicate catalyst to a temperature from 125 C to 300 C fora period of 0.5 hours to 5 hours.

Abstract: A linear motion system comprises a guiding member, a moving member, a plurality of rolling members and a preload adjusting module. The moving member is slidably disposed on the guiding member. The moving member and the guiding member together form a circulation path. When the guiding member moves with relative to the moving member, the moving member can generate a linear movement with relative to the guiding member. The rolling members are accommodated in the circulation path. The preload adjusting module is disposed on the moving member, and comprises a preload assembly and a preload regulator. The preload regulator applies a thrust to the preload assembly to adjust a preload value generated by the rolling members and applied to the moving member.

Abstract: A shell structure includes a shell and a shielding cover. The shell has an accommodating space, the accommodating space has an inner wall, and the inner wall has a first buckling portion. The shielding cover is arranged in the accommodating space, the shielding cover has an outer wall, the outer wall corresponds to the inner wall, and the outer wall has a second buckling portion corresponding to the first buckling portion. The first buckling portion and the second buckling portion are buckled with each other to limit relative degrees of freedom of the shell and the shielding cover.

Abstract: The invention unexpectedly found that an isolated and modified QPSC population has multi-potentiality, including: osteoblasts (bone cells), chondrocytes (cartilage cells), and adipocytes (fat cells). The QPSC population of the invention features a desirable immunomodulation ability, including inducing, enhancing, or suppressing an immune response and thus has potential value in the prevention and/or treatment of various immune diseases/disorders/conditions. The invention has effective homing ability and regulation ability in complement-dependent cytotoxicity, including the ability to block the activation of host complements and direct migration to the target area and the ability to enhance cell viability, and thus offers better cell protection and therapeutic efficacy in vivo in the prevention and/or treatment of various acute tissue injury, ischemic or degenerative diseases/disorders/conditions.

Abstract: A three-dimensional memory device includes a vertically alternating stack of insulating layers and electrically conductive layers located over a top surface of a substrate and memory stack structures extending through the alternating stack. Each of the memory stack structures contains a respective memory film and a respective vertical semiconductor channel, and each of the insulating layers contains a metal-organic framework (MOF) material portion. The MOF material portion has a low dielectric constant, and reduces RC coupling between the electrically conductive layers. An optional airgap may be located within the MOF material portion to further reduce the effective dielectric constant. Optionally, discrete charge storage regions or floating gates may be formed only at the levels of the electrically conductive layers to reduce program disturb and noise in the device.

Abstract: An alternating stack of insulating layers and spacer material layers can be formed over a substrate. The spacer material layers may be formed as, or may be subsequently replaced with, electrically conductive layers. A memory opening can be formed through the alternating stack, and annular lateral recesses are formed at levels of the insulating layers. Metal portions are formed in the annular lateral recesses, and a semiconductor material layer is deposited over the metal portions. Metal-semiconductor alloy portions are formed by performing an anneal process, and are subsequently removed by performing a selective etch process. Remaining portions of the semiconductor material layer include a vertical stack of semiconductor material portions, which may be optionally converted, partly or fully, into silicon nitride material portions. The semiconductor material portions and/or the silicon nitride material portions can be employed as discrete charge storage elements.

Abstract: An alternating stack of first material layers and second material layers is formed over a substrate. A hard mask layer is formed over the alternating stack. Optionally, an additional hard mask layer can be formed over the hard mask layer. A photoresist layer is applied and patterned, and cavities are formed in the hard mask layer by performing a first anisotropic etch process that transfers a pattern of the openings in the photoresist layer through the hard mask layer. Via openings are formed through an upper portion of the alternating stack by performing a second anisotropic etch process. A cladding liner can be optionally formed on sidewalls of the cavities in the hard mask layer. The via openings can be vertically extend through all layers within the alternating stack by performing a third anisotropic etch process.

Abstract: A vibration sensor senses vibrations generated by an object to generate a noise signal. A processor obtains a structure vibration level spectrum from the noise signal, uses equalization parameters and A_weighting parameters to adjust the structure vibration level spectrum to generate a sound pressure level spectrum, and uses the sound pressure level spectrum to calculate a noise value of the object.

Abstract: A four-piece dual waveband optical lens system includes, in order from the object side to the image side: a stop; a first lens element with a positive refractive power having an object-side surface being convex near an optical axis, an image-side surface being convex near the optical axis; a second lens element with a negative refractive power having an object-side surface being concave near the optical axis, an image-side surface being convex near the optical axis; a third lens element with a positive refractive power having an object-side surface being concave near the optical axis, an image-side surface being convex near the optical axis; a fourth lens element with a negative refractive power having an object-side surface being convex near the optical axis, an image-side surface being concave near the optical axis, which has a short length and good performance without re-focusing in visible light and infrared dual waveband.

Abstract: A projector and a projection method that effectively protect a to-be-protected object existing in a sensing area are provided. The projector includes a first sensor, a second sensor, an optical engine and a processor. The optical engine includes a light source. The first sensor receives a first sensed signal, generates a first signal corresponding to the first sensed signal and transmits the first signal to the processor. The second sensor receives a second sensed signal different from the first sensed signal, generates a second signal corresponding to the second sensed signal and transmits the second signal to the processor. The processor determines whether the first signal and the second signal fall into their respective pre-determined ranges. The processor transmits a light adjusting signal to control a light source.

Abstract: A patch is provided. The patch comprises: a base layer; and an adhesive layer formed on a surface of the base layer, the adhesive layer has a wave pattern such that 95% or less of the area of the surface of the base layer is covered by the adhesive of the adhesive layer, wherein, the patch has an elongation of at least 120% in both machine direction and cross-machine direction.

Abstract: A quilt structure with non-powered energy layer having an insulating layer, a first barrier layer, a second barrier layer, a first fabric layer and a second fabric layer is provided. The first barrier layer and the second barrier layer are disposed on two opposite sides of the insulating layer. The first fabric layer is disposed on one of the first barrier layer or the second barrier layer opposite the insulating layer, and the second fabric layer is disposed on another of the first barrier layer or the second barrier layer opposite the insulating layer. At least one of the insulating layer, the first fabric layer and the second fabric layer has bio-energetic fibers or far-infrared fibers.

Abstract: A structure, such as a semiconductor device, includes metal line structures located over a substrate and laterally spaced apart from each other. Each of the metal line structures includes planar metallic liner including a first metal element and a metal line body portion includes a second metal element that is different from the first metal element. Metal-organic framework (MOF) material portions are located between neighboring pairs of the metal line structures and contain metal ions or clusters of the first metal element and organic ligands connected to the metal ions or clusters of the first metal element. Air gaps may be formed in the MOF material portions to further reduce the effective dielectric constant.

Abstract: A three-dimensional memory device includes a first-tier alternating stack of first insulating layers and first electrically conductive layers located over a substrate, an etch stop material layer located over the first-tier alternating stack, a second-tier alternating stack of second insulating layers and second electrically conductive layers located over the etch stop material layer, inter-tier memory openings vertically extending through the second-tier alternating stack, the etch stop material layer, and the first-tier alternating stack, and memory opening fill structures each including a memory film and a vertical semiconductor channel located in the inter-tier memory openings. The material of the etch stop material layer is different from materials of the first insulating layers, the second insulating layers, the first electrically conductive layers, and the second electrically conductive layers.

Abstract: A seven-piece optical lens system, in order from the object side to the image side: a first lens element with a positive refractive power; a second lens element with a negative refractive power; a third lens element with a refractive power, a fourth lens element with a refractive power; a fifth lens element with a positive refractive power; a sixth lens element with a refractive power; and a seventh lens element with a negative refractive power. Such arrangements can provide a miniaturized seven-piece optical lens system having a big stop and high image quality.

Abstract: A seven-piece optical lens system includes, in order from the object side to the image side: a stop; a first lens element with a positive refractive power; a second lens element with a negative refractive power; a third lens element with a refractive power, a fourth lens element with a positive refractive power; a fifth lens element with a refractive power; a sixth lens element with a positive refractive power; and a seventh lens element with a negative refractive power. Such arrangements can provide a miniaturized seven-piece optical lens system having a big stop and high image quality.

Abstract: A fingerprint identification module collimating light reflected by fingertip skin patterns defines a fingerprint identification area and a peripheral area, for identifying fingerprints. The module includes a first light-shielding layer, optical sensors, a second light-shielding layer, a supporting portion, and a gap portion. The first and second light-shielding layers each define through holes (first and second through holes). Each second through hole exposes one optical sensor and is aligned with one first through hole. The supporting portion in the peripheral area bonds the first and second substrates, maintaining a certain distance between the first and second light-shielding layers. The gap portion is in the fingerprint identification area. Light reflected by a fingerprint is collimated by the first through holes, the gap portion, and the second through holes and then received as optical signals by the sensors to realize fingerprint imaging.

Abstract: A patient monitoring system includes a microphone that collects audio data from a patient. The audio data is used to generate audio characteristics for categorization of the audio data and analysis of the audio data to determine a patient health status. The audio characteristics and the patient health status are tracked over time and utilized to monitor a respiratory condition of the patient. The system determines the patient health status based on a comparison of the audio characteristics with a database of audio characteristics associated with recorded health statuses of various patients. The system generates a report of the current patient health status based on the database of audio characteristics and associated health statuses.