Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.

Abstract: A computer system and a method for adaptive thermal resistance-capacitance (RC) network analysis of a semiconductor device for use in a portable device are provided. The method includes the steps of: receiving a device input file and a plurality of specific effective heat transfer coefficients (HTCs) associated with the portable device; repeatedly performing a thermal analysis of the portable device based on the device input file and a current effective HTC to estimate a target die temperature of the semiconductor device; calculating a target effective HTC based on the device input file and the target die temperature; and updating the current effective HTC with the target effective HTC; and generating an output file recording the target die temperature of the semiconductor device.

Abstract: A thermoelectric generating apparatus is provided which includes a first and a second thermoelectric (TE) devices. The first TE device and the second TE device have an electrical junction surface that is an interdigitated junction interface. The Seebeck coefficient of the first TE device is more than that of the second TE device. The first TE device includes a first extended portion, and the second TE device includes a second extended portion. The first extended portion is electrically connected with a first power output end with a first contact surface formed therebetween, and the area of the electrical junction surface is larger than that of the first contact surface. The second extended portion is electrically connected with a second power output end with a second contact surface formed therebetween, and the area of the electrical junction surface is larger than that of the second contact surface.

Abstract: An apparatus for measuring a characteristic and a chip temperature of an LED includes a thermal conductive component. An LED chip is disposed on the thermal conductive component. A temperature control unit is connected to the thermal conductive component for providing a temperature to the thermal conductive component, and therefore providing the temperature to the LED chip via the thermal conductive component. A power-source and voltage-meter unit provides a current to the LED chip, and measures a voltage value of the LED chip. Under a measurement mode, the current is featured with a current waveform having a high current level and a low current level which are alternatively changed, for applying to the LED chip. Measurements are conducted respectively corresponding to the high current level and the low current level, and a correlation curve between the voltage and the temperature can be obtained with the results of measurement.

Abstract: An apparatus and a method for measuring a diode chip are provided. The diode chip is placed on a thermal conductive element. The apparatus measures an instant starting current and a first temperature, which is associated with the instant starting current, of the thermal conductive element. After the diode chip operates, the apparatus adjusts the temperature of the thermal conductive element to a second temperature, such that the current of the diode chip is adjusted to be equal to the instant starting current. The apparatus calculates a property of the diode chip according to a real power of the diode chip and a difference between the first temperature and the second temperature.