Abstract: An electronic apparatus including an image capturing device, a storage device and a processor and an operation method thereof are provided. The image capturing device captures an image for a user, and the storage device records a plurality of modules. The processor is coupled to the image capturing device and the storage device and is configured to: configure the image capturing device to capture a head image of a user; perform a face recognition operation to obtain a face region; detect a plurality of facial landmarks within the face region; estimate a head posture angle of the user according to the facial landmarks; calculate a gaze position where the user gazes on the screen according to the head posture angle, a plurality of rotation reference angle, and a plurality of predetermined calibration positions; and configure the screen to display a corresponding visual effect according to the gaze position.

Abstract: A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: The invention provides an operation method for multi-monitor applicable to an electronic system including a plurality of monitors. The operation method for multi-monitor includes capturing a current image including a user by using a camera, calculating a current gaze direction of the user according to the current image, and determining a target monitor according to the current gaze direction of the user. After the target monitor is determined, the operation method for multi-monitor further includes moving an object to a display area of the target monitor. In addition to the operation method for multi-monitor, an electronic system using the operation method is also provided.

Abstract: An electronic apparatus including an image capturing device, a storage device and a processor and an operation method thereof are provided. The image capturing device captures an image for a user, and the storage device records a plurality of modules. The processor is coupled to the image capturing device and the storage device and is configured to: configure the image capturing device to capture a head image of a user; perform a face recognition operation to obtain a face region; detect a plurality of facial landmarks within the face region; estimate a head posture angle of the user according to the facial landmarks; calculate a gaze position where the user gazes on the screen according to the head posture angle, a plurality of rotation reference angle, and a plurality of predetermined calibration positions; and configure the screen to display a corresponding visual effect according to the gaze position.

Abstract: A circuit substrate includes a dielectric layer, a first conductive structure and a second conductive structure. The first conductive structure includes a first conductive circuit and a first conductive via. The first conductive circuit is disposed on the dielectric layer. The first conductive via is disposed in the dielectric layer, and the first conductive circuit is connected to the first conductive via. The second conductive structure includes a second conductive circuit and a second conductive via. The second conductive circuit is disposed in the dielectric layer, the second conductive circuit and the first conductive circuit of the first conductive structure are arranged with an interval, and the second conductive via surrounds the first conductive via with an interval. The second conductive structure has an extending portion. The extending portion protrudes toward the first conductive via and does not contact the first conductive via.

Abstract: A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Abstract: A semiconductor chip is provided. The semiconductor chip includes at least one interlayer dielectric layer, a transmission pattern and a stress absorption structure. The at least one interlayer dielectric layer is disposed on a substrate. The transmission pattern is disposed on the at least one interlayer dielectric layer and within a peripheral region of the semiconductor chip. The transmission pattern is electrically connected to an external signal source. The stress absorption structure is disposed in the at least one interlayer dielectric layer within the peripheral region, and electrically connected to the transmission pattern. The stress absorption structure is covered by the transmission pattern.

Abstract: A semiconductor chip is provided. The semiconductor chip includes at least one interlayer dielectric layer, a transmission pattern and a stress absorption structure. The at least one interlayer dielectric layer is disposed on a substrate. The transmission pattern is disposed on the at least one interlayer dielectric layer and within a peripheral region of the semiconductor chip. The transmission pattern is electrically connected to an external signal source. The stress absorption structure is disposed in the at least one interlayer dielectric layer within the peripheral region, and electrically connected to the transmission pattern. The stress absorption structure is covered by the transmission pattern.

Abstract: A circuit substrate includes a dielectric layer, a first conductive structure and a second conductive structure. The first conductive structure includes a first conductive circuit and a first conductive via. The first conductive circuit is disposed on the dielectric layer. The first conductive via is disposed in the dielectric layer, and the first conductive circuit is connected to the first conductive via. The second conductive structure includes a second conductive circuit and a second conductive via. The second conductive circuit is disposed in the dielectric layer, the second conductive circuit and the first conductive circuit of the first conductive structure are arranged with an interval, and the second conductive via surrounds the first conductive via with an interval. The second conductive structure has an extending portion. The extending portion protrudes toward the first conductive via and does not contact the first conductive via.

Abstract: A memory system includes a memory cell array, a bit line switch, first and second page buffers, a column switch, an error correction circuit, and control circuits. The second page buffer can swap data with the first page buffer. The control circuits controls the bit line switch and the first and second page buffers, sequentially reads, page by page, one or more pages from the mth (m is a positive integer) page to the nth (n is an integer greater than m) page of the first block in the memory cell array, controls the error correction circuit to perform error correction calculation by the error correction circuit, controls the first and second data buffers and the bit line switch, and controls to perform write in the second block in the erase state in the memory cell array.

Abstract: A memory system includes a memory cell array, a bit line switch, first and second page buffers, a column switch, an error correction circuit, and control circuits. The second page buffer can swap data with the first page buffer. The control circuits controls the bit line switch and the first and second page buffers, sequentially reads, page by page, one or more pages from the mth (m is a positive integer) page to the nth (n is an integer greater than m) page of the first block in the memory cell array, controls the error correction circuit to perform error correction calculation by the error correction circuit, controls the first and second data buffers and the bit line switch, and controls to perform write in the second block in the erase state in the memory cell array.