Abstract: The present disclosure provides a semiconductor structure. The structure includes a semiconductor substrate, a gate stack over a first portion of a top surface of the semiconductor substrate; and a laminated dielectric layer over at least a portion of a top surface of the gate stack. The laminated dielectric layer includes at least a first sublayer and a second sublayer. The first sublayer is formed of a material having a dielectric constant lower than a dielectric constant of a material used to form the second sublayer and the material used to form the second sublayer has an etch selectivity higher than an etch selectivity of the material used to form the first sublayer.

Abstract: A backlight control circuit for a surface light emitting device is provided. The backlight control circuit includes a driving circuit. The driving circuit is configured to generate a plurality of driving currents to drive the surface light emitting device such that a plurality of backlight blocks of the surface light emitting device generate a plurality of brightness values. The surface light emitting device is divided into a first backlight area and a second backlight area. The second backlight area is closer to an edge of the surface light emitting device than the first backlight area. A first driving current of the plurality of driving currents is utilized for driving the light source of the first backlight area. A second driving current of the plurality of driving currents is utilized for driving the light source of the second backlight area. The second driving current is greater than the first driving current.

Abstract: A method for transferring an electronic device includes steps as follows. A flexible carrier is provided and has a surface with a plurality of electronic devices disposed thereon. A target substrate is provided corresponding to the surface of the flexible carrier. A pin is provided, and a pin end thereof presses on another surface of the flexible carrier without the electronic devices disposed thereon, so that the flexible carrier is deformed, causing at least one of the electronic devices to move toward the target substrate and to be in contact with the target substrate. A beam is provided to transmit at least a portion of the pin and emitted from the pin end to melt a solder. The electronic device is fixed on the target substrate by soldering. The pin is moved to restore the flexible carrier to its original shape, allowing the electronic device fixed by soldering to separate from the carrier.

Abstract: A radar signal processing system with a self-interference cancelling function includes an analog front end (AFE) processor, an analog to digital converter (ADC), an adaptive interference canceller (AIC), and a digital to analog converter (DAC). The AFE processor receives an original input signal and generates an analog input signal. The ADC converts the analog input signal to a digital input signal. The AIC generates a digital interference signal digital interference signal by performing an adaptive interference cancellation process according to the digital input signal. The DAC converts the digital interference signal to an analog interference signal. Finally, the analog interference signal is fed back to the AFE and cancelled from the original input signal in the AFE processor while performing the front end process, reducing the interference of the static interference from the leaking of a close-by transmitter during the front end process.

Abstract: The present disclosure relates to a welding quality detecting field, and specifically relates to a quality detection device. The quality detection device includes an integrated probe set, a driving module and a collecting module. The integrated probe set includes a plurality of integrated probe assemblies. The integrated probe assemblies are disposed in pairs and each integrated probe assembly includes a driving end and a collecting end. The driving end of one integrated probe assembly is matched with the driving end of another integrated probe assembly disposed in pairs with the one integrated probe assembly. The collecting end of one integrated probe assembly is matched with the collecting end of another integrated probe assembly disposed in pairs with the one integrated probe assembly.

Abstract: The present disclosure relates to a welding quality detecting field, and specifically relates to a quality detection device. The quality detection device includes an integrated probe set, a driving module and a collecting module. The integrated probe set includes a plurality of integrated probe assemblies. The integrated probe assemblies are disposed in pairs and each integrated probe assembly includes a driving end and a collecting end. The driving end of one integrated probe assembly is matched with the driving end of another integrated probe assembly disposed in pairs with the one integrated probe assembly. The collecting end of one integrated probe assembly is matched with the collecting end of another integrated probe assembly disposed in pairs with the one integrated probe assembly.