Abstract: A core-shell particle includes a core and a shell that is wrapped around the core. The core includes aluminum nitride. The shell includes aluminum and a dopant, and the dopant is yttrium, calcium, magnesium, lanthanum, niobium, titanium, copper, or a combination thereof. The aluminum and the dopant in the shell have a weight ratio of 90:10 to 99.9:0.1. The core-shell particle can be sintered to form a ceramic bulk.

Abstract: A precursor structure is provided. The precursor structure has the following chemical formula: ( La 2 ? Zr 2 - x ? M x ? O 7 ) · 1 2 ? ( La 2 - y ? M y ? ? O 3 ) , wherein M is a trivalent ion or a pentavalent ion, M? is a bivalent ion, x=0-1, y=0-1.5, and the precursor structure includes a pyrochlore phase. Since the pyrochlore phase may be transformed into the garnet phase through a lithiation process and the phase transition temperature is lower (e.g., 500-1000° C.), the precursor structure may be co-fired with the cathode material (e.g., lithium cobalt oxide (LiCoO2)) to form a thin lamination structure. That is, the thickness of the solid electrolyte may be effectively reduced, thereby improving the ionic conductivity of the solid electrolyte ion battery.

Abstract: A method of removing fluoride ion from waste liquid is provided, which includes providing a calcium source and a plurality of ceramic particles to a waste liquid containing fluoride ion for forming a plurality of calcium fluoride layers wrapping the ceramic particles. The calcium fluoride layers are connected to form a calcium fluoride bulk. The ceramic particles are embedded in the calcium fluoride bulk. The ceramic particles and the calcium fluoride bulk have a weight ratio of 1:4 to 1:20.

Abstract: A porous material including a composite oxide body containing calcium oxide, iron oxide, and silica, and a plurality of inter-connecting microchannel structures is provided. A preparing method of porous material is further provided. With the inter-connecting microchannel structures of the porous material and the advantages of high porosity and large specific surface area, the porous material has a bright prospect in the fields of catalysts, filters, adsorption materials, and fuel carriers.

Abstract: A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

Abstract: A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600° C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

Abstract: A porous material including a composite oxide body containing calcium oxide, iron oxide, and silica, and a plurality of inter-connecting microchannel structures is provided. A preparing method of porous material is further provided. With the inter-connecting microchannel structures of the porous material and the advantages of high porosity and large specific surface area, the porous material has a bright prospect in the fields of catalysts, filters, adsorption materials, and fuel carriers.

Abstract: A precursor structure is provided. The precursor structure has the following chemical formula: ( La 2 ? Zr 2 - x ? M x ? O 7 ) · 1 2 ? ( La 2 - y ? M y ? ? O 3 ) , wherein M is a trivalent ion or a pentavalent ion, M? is a bivalent ion, x=0-1, y=0-1.5, and the precursor structure includes a pyrochlore phase. Since the pyrochlore phase may be transformed into the garnet phase through a lithiation process and the phase transition temperature is lower (e.g., 500-1000° C.), the precursor structure may be co-fired with the cathode material (e.g., lithium cobalt oxide (LiCoO2)) to form a thin lamination structure. That is, the thickness of the solid electrolyte may be effectively reduced, thereby improving the ionic conductivity of the solid electrolyte ion battery.

Abstract: A method of removing fluoride ion from waste liquid is provided, which includes providing a calcium source and a plurality of ceramic particles to a waste liquid containing fluoride ion for forming a plurality of calcium fluoride layers wrapping the ceramic particles. The calcium fluoride layers are connected to form a calcium fluoride bulk. The ceramic particles are embedded in the calcium fluoride bulk. The ceramic particles and the calcium fluoride bulk have a weight ratio of 1:4 to 1:20.

Abstract: A method of forming a core-shell composite material includes depositing a polysiloxane shell to wrap a ceramic core via chemical vapor deposition for forming a core-shell composite material, wherein the ceramic core is an oxide of metal and silicon, which includes 100 parts by weight of calcium, 50 to 95 parts by weight of iron, 15 to 40 parts by weight of silicon, 2 to 15 parts by weight of magnesium, 2 to 20 parts by weight of aluminum, and 2 to 10 parts by weight of manganese.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.