Patents by Inventor Sheng-Min Yu

Sheng-Min Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10974994
    Abstract: A method of forming a core-shell composite material includes depositing a polysiloxane shell to wrap a ceramic core via chemical vapor deposition for forming a core-shell composite material, wherein the ceramic core is an oxide of metal and silicon, which includes 100 parts by weight of calcium, 50 to 95 parts by weight of iron, 15 to 40 parts by weight of silicon, 2 to 15 parts by weight of magnesium, 2 to 20 parts by weight of aluminum, and 2 to 10 parts by weight of manganese.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: April 13, 2021
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Sheng-Min Yu, Chien-Chung Hsu, Kai-Hsiang Chuang, Ming-Hui Chang
  • Patent number: 10483326
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.
    Type: Grant
    Filed: December 21, 2017
    Date of Patent: November 19, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Sheng-Min Yu, Wen-Ching Sun, Pei-Wen Yen, Yan-Rung Lin
  • Patent number: 10418392
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Grant
    Filed: June 22, 2018
    Date of Patent: September 17, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang, Sheng-Min Yu
  • Patent number: 10403657
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Grant
    Filed: November 14, 2017
    Date of Patent: September 3, 2019
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang, Sheng-Min Yu
  • Publication number: 20190074326
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.
    Type: Application
    Filed: December 21, 2017
    Publication date: March 7, 2019
    Inventors: Sheng-Min YU, Wen-Ching SUN, Pei-Wen YEN, Yan-Rung LIN
  • Publication number: 20180301485
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Application
    Filed: June 22, 2018
    Publication date: October 18, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen YEN, Yan-Rung LIN, Kai-Ping CHUANG, Sheng-Min YU
  • Patent number: 10038019
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Grant
    Filed: December 29, 2016
    Date of Patent: July 31, 2018
    Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen Yen, Yan-Rung Lin, Kai-Ping Chuang, Sheng-Min Yu
  • Publication number: 20180083054
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Application
    Filed: November 14, 2017
    Publication date: March 22, 2018
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen YEN, Yan-Rung LIN, Kai-Ping CHUANG, Sheng-Min YU
  • Publication number: 20170186788
    Abstract: An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.
    Type: Application
    Filed: December 29, 2016
    Publication date: June 29, 2017
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Wen YEN, Yan-Rung LIN, Kai-Ping CHUANG, Sheng-Min YU
  • Publication number: 20150162196
    Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
    Type: Application
    Filed: February 19, 2015
    Publication date: June 11, 2015
    Inventors: Wen-Ching SUN, Sheng-Min YU, Tai-Jui WANG, Tzer-Shen LIN
  • Patent number: 9040401
    Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
    Type: Grant
    Filed: February 19, 2015
    Date of Patent: May 26, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Ching Sun, Sheng-Min Yu, Tai-Jui Wang, Tzer-Shen Lin
  • Patent number: 9040983
    Abstract: A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.
    Type: Grant
    Filed: October 21, 2013
    Date of Patent: May 26, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Ching Sun, Tzer-Shen Lin, Sheng-Min Yu
  • Patent number: 9012314
    Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
    Type: Grant
    Filed: December 11, 2012
    Date of Patent: April 21, 2015
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Ching Sun, Sheng-Min Yu, Tai-Jui Wang, Tzer-Shen Lin
  • Publication number: 20140087549
    Abstract: A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.
    Type: Application
    Filed: December 11, 2012
    Publication date: March 27, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wen-Ching SUN, Sheng-Min YU, Tai-Jui WANG, Tzer-Shen LIN
  • Publication number: 20140080313
    Abstract: An etching composition for a semiconductor wafer is provided, including 0.5-50 wt % base, 10-80 wt % alcohol, 0.01-15 wt % additive and water. A method for etching a semiconductor wafer is also provided. When the etching composition is applied to the entire surface or a partial surface of the semiconductor wafer at 60-200° C., the etching composition reacts on the semiconductor wafer to form a foam that etches the semiconductor wafer and includes a solid, a liquid and a gas. At the same time, the additive forms an oxide mask on the surface of the semiconductor wafer. Therefore, an excellent texture structure is formed on the surface of the semiconductor wafer, and a single surface of the semiconductor wafer is etched.
    Type: Application
    Filed: December 21, 2012
    Publication date: March 20, 2014
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Sheng-Min YU, Wen-Ching SUN, Tai-Jui WANG, Yi-Fan CHEN, Chia-Liang SUN, Hao-Hsiang CHIANG, Pin-Guan LIAO, Chi-Fan CHIANG, Tzer-Shen LIN
  • Publication number: 20140042440
    Abstract: A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.
    Type: Application
    Filed: October 21, 2013
    Publication date: February 13, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Wen-Ching SUN, Tzer-Shen LIN, Sheng-Min YU
  • Patent number: 8564104
    Abstract: According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.
    Type: Grant
    Filed: April 11, 2011
    Date of Patent: October 22, 2013
    Assignee: Industrial Technology Research Institute
    Inventors: Wen-Ching Sun, Tzer-Shen Lin, Sheng-Min Yu
  • Publication number: 20130125961
    Abstract: An optical passivation film includes Tii-xAlxOy:Z, where Z represents a halogen, x is from 0.05 to 0.95, and y is greater than 0. A method for manufacturing the optical passivation film includes preparing a spray solution including an aluminium oxide precursor, a titanium oxide precursor, a halogen solution and a solvent. A substrate is disposed on a heating device to heat the substrate. The spray solution is sprayed on the substrate to form the optical passivation film. A solar cell having the optical passivation film is also provided.
    Type: Application
    Filed: April 30, 2012
    Publication date: May 23, 2013
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wen-Ching Sun, Sheng-Min Yu, Tai-Jui Wang, Chia-Liang Sun, Tzer-Shen Lin
  • Publication number: 20120104566
    Abstract: According to an embodiment of the invention, a passivation layer structure of a semiconductor device for disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.
    Type: Application
    Filed: April 11, 2011
    Publication date: May 3, 2012
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Wen-Ching Sun, Tzer-Shen Lin, Sheng-Min Yu