Abstract: A foam is provided. The foam includes a foaming material and a plurality of cells arranged within the foaming material. The foaming material is prepared from a composition, which includes 0.01-2.0 parts by weight of a flow aid and 100 parts by weight of a block copolymer. The block copolymer includes a first block, a second block, and a linking moiety. The first block is connected to the second block via the linking moiety. The first block is an aromatic polyester block. The second block is an aliphatic polyether block, an aliphatic polyester block, or an aliphatic polycarbonate block. The linking moiety is a residue of a dehydrogenated polyol.

Abstract: An improved work function layer and a method of forming the same are disclosed. In an embodiment, the method includes forming a semiconductor fin extending from a substrate; depositing a dielectric layer over the semiconductor fin; depositing a first work function layer over the dielectric layer; and exposing the first work function layer to a metastable plasma of a first reaction gas, a metastable plasma of a generation gas, and a metastable plasma of a second reaction gas, the first reaction gas being different from the second reaction gas.

Abstract: A device includes a fin extending from a semiconductor substrate, a gate stack over and along a sidewall of the fin, an isolation region surrounding the gate stack, an epitaxial source/drain region in the fin and adjacent the gate stack, and a source/drain contact extending through the isolation region, including a first silicide region in the epitaxial source/drain region, the first silicide region including NiSi2, a second silicide region on the first silicide region, the second silicide region including TiSix, and a conductive material on the second silicide region.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: Embodiments described herein relate to plasma processes. A plasma process includes generating a plasma containing negatively charged oxygen ions. A substrate is exposed to the plasma. The substrate is disposed on a pedestal while being exposed to the plasma. While exposing the substrate to the plasma, a negative direct current (DC) bias voltage is applied to the pedestal to repel the negatively charged oxygen ions from the substrate.

Abstract: A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.

Abstract: The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.

Abstract: The present disclosure is related to an automatic material extension machine, and more particularly to a rotatable abutment type extension machine adapted for continuously drawing out rolled up material mounted on rolls by friction for further processing; which includes an abutment balance transmitter and an automatic end-joining device, and is mainly applied to tape, wall paper and leather substance prepared in rolls. The abutment extension transmitter has two sets of developing rollers on which are disposed the rolls ready to be operated; one of the sets is identified as action set and the other is called stand-by set; the former uses driving motor to actuate two cylinders which are in abutment with the roll of material so to make the rolled-up material outwardly extended by friction.