Abstract: A digital image comparator includes an Faster R-CNN configured to generate a filtered set of local feature maps of an input image, a match head, and logic to preserve the local feature maps in an indexed data structure and to make the local feature maps retrievable by the match head via local feature map indexes.

Abstract: A scanning control for a photocopier includes a pair of identically weighted networks configured to perform feature extraction on images and a memory storing registered security patterns. A match head of the scanning control receives an image pair, wherein a first image of the image pair is generated by a scanning element of the photocopier, and a second image of the image pair is obtained from the registered security patterns, and outputs a match score for the image pair. The output of the match head coupled controls operation of the scanning element.

Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.

Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.

Abstract: A lighting apparatus includes a first substrate, a plurality of first light-emitting devices disposed on the first substrate, a second substrate disposed over the first substrate, and a plurality of second light-emitting devices disposed on the second substrate. A reflective surface is disposed between the first substrate and the second substrate. The reflective surface is configured to reflect light emitted by at least some of the first light-emitting devices in a direction that is at least partially toward the first substrate. The reflective surface has one of: a saw-patterned side view profile, or a curved side view profile that is free of having an inflection point.

Abstract: A lamp includes a substrate having a center region and a peripheral region, a first subset of light-emitting devices disposed on the center region, and a second subset of light-emitting devices disposed on the peripheral region. A temperature difference between the center region and the peripheral region is greater than 10 degrees.

Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.

Abstract: The present disclosure provides one embodiment of an illumination structure. The illumination structure includes a substrate. A light-emitting diode (LED) is disposed over the substrate. A first lens is disposed over the LED. A second lens is disposed over the first lens. The first lens and the second lens are configured to refract light that is emitted by the LED backward.

Abstract: An optical emitter is fabricated by bonding a Light-Emitting Diode (LED) die to a package wafer, electrically connecting the LED die and the package wafer, forming a phosphor coating over the LED die on the package wafer, molding a lens over the LED die on the package wafer, molding a reflector on the package wafer, and dicing the wafer into at least one optical emitter.

Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.

Abstract: A lamp includes a substrate having a center region and a peripheral region, a first subset of light-emitting devices disposed on the center region, and a second subset of light-emitting devices disposed on the peripheral region. A temperature difference between the center region and the peripheral region is greater than 10 degrees.

Abstract: A lamp includes a substrate, a plurality of light-emitting devices located over the substrate, and a cap that is located over the light-emitting devices. The plurality of light-emitting devices include a first subset of light-emitting devices and a second subset of light-emitting devices. Each light-emitting device in the first subset is free of a phosphor coating. Each light-emitting device in the second subset includes a phosphor coating. The cap has both photo-conversion properties and light-scattering properties, and the cap is located over the first subset of the light-emitting devices but exposes the second subset of the light-emitting devices.

Abstract: A lighting apparatus includes a first substrate, a plurality of first light-emitting devices disposed on the first substrate, a second substrate disposed over the first substrate, and a plurality of second light-emitting devices disposed on the second substrate. A reflective surface is disposed between the first substrate and the second substrate. The reflective surface is configured to reflect light emitted by at least some of the first light-emitting devices in a direction that is at least partially toward the first substrate. The reflective surface has one of: a saw-patterned side view profile, or a curved side view profile that is free of having an inflection point.

Abstract: The present disclosure provides one embodiment of an illumination structure. The illumination structure includes a substrate. A light-emitting diode (LED) is disposed over the substrate. A first lens is disposed over the LED. A second lens is disposed over the first lens. The first lens and the second lens are configured to refract light that is emitted by the LED backward.

Abstract: The present disclosure involves an LED lamp. The LED lamp includes a plurality of light-emitting diode (LED) light sources located on a substrate. At least a subset of the LED light sources is free of a phosphor coating. The LED lamp includes a multi-layered cap structure located over at least the subset of the LED light sources. The cap structure contains a phosphor material and a diffuser material. The cap structure is physically separated from the subset of the LED light sources by a gap. The LED lamp includes a cover structure positioned over and surrounding the LED light sources and the cap structure.

Abstract: The embodiments of a light-emitting-diode-based (LED-based) light bulb and an LED assembly described provide mechanisms of reflecting generated by LED emitters toward the back of the LED-based light bulb. An upper substrate and a lower substrate are used to support upper and lower LED emitters. A slanted and reflective surface between the upper substrate and the lower substrate reflects light generated by the lower LED emitters toward the backside of the LED-based light bulb.

Abstract: The present disclosure provides one embodiment of an illumination structure. The illumination structure includes a light-emitting diode (LED) device on a substrate; a lens secured on the substrate and over the LED device; and a diffuser cap secured on the substrate and covering the lens, wherein the lens and diffuser cap are designed and configured to redistribute emitting light from the LED device for wide angle illumination.

Abstract: The present disclosure involves an LED lamp. The LED lamp includes a plurality of light-emitting diode (LED) light sources located on a substrate. At least a subset of the LED light sources is free of a phosphor coating. The LED lamp includes a multi-layered cap structure located over at least the subset of the LED light sources. The cap structure contains a phosphor material and a diffuser material. The cap structure is physically separated from the subset of the LED light sources by a gap. The LED lamp includes a cover structure positioned over and surrounding the LED light sources and the cap structure.

Abstract: An optical emitter is fabricated by bonding a Light-Emitting Diode (LED) die to a package wafer, electrically connecting the LED die and the package wafer, forming a phosphor coating over the LED die on the package wafer, molding a lens over the LED die on the package wafer, molding a reflector on the package wafer, and dicing the wafer into at least one optical emitter.

Abstract: An optical emitter is fabricated by bonding a Light-Emitting Diode (LED) die to a package wafer, electrically connecting the LED die and the package wafer, forming a phosphor coating over the LED die on the package wafer, molding a lens over the LED die on the package wafer, molding a reflector on the package wafer, and dicing the wafer into at least one optical emitter.