Patents by Inventor Sheng-Shin Lin

Sheng-Shin Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Non-contact method to monitor and quantify effective work function of metals
    Patent number: 10763179
    Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.
    Type: Grant
    Filed: February 26, 2016
    Date of Patent: September 1, 2020
    Assignee: SEMILAB Semiconductor Physics Laboratory Co., Ltd.
    Inventors: Dmitriy Marinskiy, Thye Chong Loy, Jacek Lagowski, Sung-Li Wang, Lin-Jung Wu, Shyh-Shin Ferng, Yi-Hung Lin, Sheng-Shin Lin
  • System and method for damage reduction in light-assisted processes
    Patent number: 10049886
    Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.
    Type: Grant
    Filed: October 30, 2014
    Date of Patent: August 14, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yi-Hung Lin, Sheng-Shin Lin, Ying-Chieh Hung, Yu-Ting Huang, Tze-Liang Lee
  • NON-CONTACT METHOD TO MONITOR AND QUANTIFY EFFECTIVE WORK FUNCTION OF METALS
    Publication number: 20160252565
    Abstract: An example semiconductor wafer includes a semiconductor layer, a dielectric layer disposed on the semiconductor layer, and a layer of the metal disposed on the dielectric layer. An example method of determining an effective work function of a metal on the semiconductor wafer includes determining a surface barrier voltage of the semiconductor wafer, and determining a metal effective work function of the semiconductor wafer based, at least in part, on the surface barrier voltage.
    Type: Application
    Filed: February 26, 2016
    Publication date: September 1, 2016
    Inventors: Dmitriy Marinskiy, Thye Chong Loy, Jacek Lagowski, Sung-Li Wang, Lin-Jung Wu, Shyh-Shin Ferng, Yi-Hung Lin, Sheng-Shin Lin
  • System and Method for Damage Reduction in Light-Assisted Processes
    Publication number: 20160126105
    Abstract: A method embodiment for forming a semiconductor device includes providing a dielectric layer having a damaged surface and repairing the damaged surface of the dielectric layer. Repairing the damaged surface includes exposing the damaged surface of the dielectric layer to a precursor chemical, activating the precursor chemical using light energy, and filtering out a spectrum of the light energy while activating the precursor chemical.
    Type: Application
    Filed: October 30, 2014
    Publication date: May 5, 2016
    Inventors: Yi-Hung Lin, Sheng-Shin Lin, Ying-Chieh Hung, Yu-Ting Huang, Tze-Liang Lee