Abstract: A method of determining interaction information, an electronic device and a storage medium are provided, which relates to a field of artificial intelligence technology, in particular to a large model, a generative model, an NLP, an intelligent search and other fields. An implementation is to determine a plurality of questioning dimensions according to query information of a subject and historical query information, where each questioning dimension includes a dimension name and a plurality of options; determine a target questioning dimension from the plurality of questioning dimensions according to evaluation values of the plurality of questioning dimensions and whether semantic information of the plurality of questioning dimensions are consistent with semantic information of a query result associated with the query information; and determine the interaction information according to the dimension name and the plurality of options in the target questioning dimension.

Abstract: A fluid-tight envelope (13) encloses an RFID chip (11), a first array of conductors (14a-d) on an internal surface (19), and a second array of conductors (15a-d) fixed to an opposing internal surface (20) of a flexible outer wall (22) of the envelope (13). The outer wall (22) is urged inwardly by ambient pressure to press the conductors of the second array (15a-d) into electrical contact with the conductors of first array (14a-d) to thereby form an antenna (12). Fluid pressure in the chamber (21) that holds the antenna (12) tends to displace the outer wall (22) outwardly to thereby separate conductors of the first and second arrays (14a-d, 15a-d).

Abstract: The present invention provides a method of treating targeted abnormal cells that are resistant, refractory, insensitive, non-responsive, or inadequately responsive to an ingredient, as well as cytotoxic cells used therein, comprising administering an effective amount of the ingredient-complexed cytotoxic cells to a subject with the disease.

Abstract: A horizontally oriented calibration jig for a wafer gripper arm of an ion implanter is disclosed. The calibration jig is mounted within the process chamber of the ion implanter. The calibration jig includes a mounting plate that spans a diameter of the wafer gripper arm, a support stand passing through the mounting plate, and a calibration plate at a bottom end of the support stand. The perimeter of the calibration plate includes a plurality of notches. The calibration plate is rotated. If any finger of the wafer gripper arm falls into a notch, the rotating calibration plate stops. The finger is then adjusted until it does not fall into a notch.

Abstract: Systems, computer program products, and methods are described herein for analyzing micro-anomalies in anonymized electronic data. The present disclosure is configured to import or retrieve a first data set, process the first data set to develop at least one event-outcome projection, define an outcome projection data set, import or receive a monitored user data set, anonymize the monitored user data set, define an avatar data set process the avatar data set, wherein the steps of import or receive a monitored user data set, anonymize the monitored user data set, and define an avatar data set are repeated one or more times.

Abstract: An integrated circuit includes a device region and an overlay mark region. The device region includes a plurality of stacked channels of a transistor, a source/drain region of the transistor, a source/drain contact of a first material on the source/drain region, and a conductive via of a second material in contact with the source/drain contact. The overlay mark region includes a first diffraction grating of first metal structures of the first material and a second first diffraction grating of second metal structures above of the second material above and offset from the first metal structures.

Abstract: A method for manufacturing a memory device includes forming a dielectric layer over a wafer, wherein the wafer has a device region and a peripheral region adjacent to the device region. A bottom via opening is formed in the dielectric layer and over the device region of the wafer and a trench is formed in the dielectric layer and over the peripheral region of the wafer. A bottom electrode via is formed in the bottom via opening. A bottom electrode layer is conformally formed over the bottom electrode via and lining a sidewall and a bottom of the trench. A memory layer and a top electrode are formed over the bottom electrode layer.

Abstract: A semiconductor die is provided. The semiconductor die includes a substrate having a front surface, a rear surface opposite to the front surface, and a sidewall connected between the front surface and the rear surface. The sidewall includes a first primary segment immediately connected to the front surface, a second primary segment immediately connected to the rear surface, and a middle segment between the first primary segment and the second primary segment. The slope of the second primary segment is less than the slope of the first primary segment, and the slope of the middle segment is less than the slope of the second primary segment. Each of the first primary segment, the second primary segment, and the middle segment is a flat surface having a slope greater than 0 degrees relative to a line parallel to the front surface of the substrate.

Abstract: A linker, comprising an Lb structure fragment, the Lb structure being selected from the following formula, wherein subscript q is selected from any integer from 1 to 20, preferably from 3 to 10, and most preferably from 5 to 8. The present application also relates to a use of the linker in the preparation of a linker-drug and a ligand-drug conjugate.

Abstract: A method for manufacturing a memory device includes forming a dielectric layer over a wafer, wherein the wafer has a device region and a peripheral region adjacent to the device region. A bottom via opening is formed in the dielectric layer and over the device region of the wafer and a trench is formed in the dielectric layer and over the peripheral region of the wafer. A bottom electrode via is formed in the bottom via opening. A bottom electrode layer is conformally formed over the bottom electrode via and lining a sidewall and a bottom of the trench. A memory layer and a top electrode are formed over the bottom electrode layer.

Abstract: A method for sawing a semiconductor wafer is provided. The method includes sawing the semiconductor wafer with a first dicing blade to form a first opening. The semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape. The first opening is formed in the upper portion of the substrate. The method also includes sawing the semiconductor wafer with a second dicing blade from the first opening to form a second opening under the first opening and in the middle portion of the substrate. The method further includes sawing the semiconductor wafer with a third dicing blade from the second opening to form a third opening under the second opening and penetrating the lower portion of the substrate, so that the semiconductor wafer is divided into two dies. The first dicing blade, the second dicing blade, and the third dicing blade have different widths.

Abstract: According to an embodiment, a method for estimating robustness of a trained machine learning model is disclosed. The method comprises receiving a labelled dataset, a model of an object for which defect detection is required, and the trained machine learning model. Further, the method comprises determining one or more parameters associated with image capturing conditions in the environment. Furthermore, the method comprises performing an auto extraction of one or more defects using the model of the object and the labelled dataset based on image processing. Furthermore, the method comprises generating one or more images based on the one or more parameters and the one or more defects. Additionally, the method comprises testing the trained machine learning model using the generated images. Moreover, the method comprises estimating a robustness report for the machine learning model based on the testing of the machine learning model.

Abstract: Systems, computer program products, and methods are described herein for analyzing micro-anomalies in anonymized electronic data. The present disclosure is configured to import or retrieve a first data set, process the first data set to develop at least one event-outcome projection, define an outcome projection data set, import or receive a monitored user data set, anonymize the monitored user data set, define an avatar data set process the avatar data set, wherein the steps of import or receive a monitored user data set, anonymize the monitored user data set, and define an avatar data set are repeated one or more times.

Abstract: According to an embodiment, a method for estimating robustness of a trained machine learning model is disclosed. The method comprises receiving a labelled dataset, a model of an object for which defect detection is required, and the trained machine learning model. Further, the method comprises determining one or more parameters associated with image capturing conditions in the environment. Furthermore, the method comprises performing an auto extraction of one or more defects using the model of the object and the labelled dataset based on image processing. Furthermore, the method comprises generating one or more images based on the one or more parameters and the one or more defects. Additionally, the method comprises testing the trained machine learning model using the generated images. Moreover, the method comprises estimating a robustness report for the machine learning model based on the testing of the machine learning model.

Abstract: The present invention provides a method for determining hydrogen sulfide (H2S) by headspace single-drop liquid phase microextraction and intelligent device colorimetry, which comprises: taking a silver-gold core-shell triangular nanosheet (Ag@Au TNS) as a nanodetection probe, in combination with an analysis method of headspace single-drop microextraction (HS-SDME), specifically extracting H2S volatilized from a sample to be detected by the nanodetection probe, and detecting H2S in the extracted sample with the help of the photographing function of an intelligent device and a color picking software. Compared with the prior art, the present invention adopts intelligent device colorimetry, with the limit of detection of about 65 nM and the linear range of 0.1-100 ?M, and the established method can be applied to the determination of H2S in actual samples such as egg white, milk and other opaque samples, and has the advantages of few procedures, simple operation, high detection efficiency and the like.

Abstract: Disclosed are a pallet configured to bear a battery cell. The pallet includes an external fixing rack and a plurality of supporting beams. A mounting space is formed inside the external fixing rack. The plurality of supporting beams are disposed in the mounting space. The plurality of supporting beams are arranged along a first direction. The plurality of supporting beams are connected to the external fixing rack separately. At least two of the supporting beams are spaced apart. The plurality of supporting beams are configured to bear the battery cell.

Abstract: A constraining apparatus and a constraining device are described. The constraining apparatus includes a base, a positioning assembly, and a cushion assembly. The positioning assembly includes a plurality of positioning members arranged in sequence and located between two end plate assemblies. The cushion assembly is disposed on at least one of two sides of the positioning member that are opposite each other in the first direction. The constraining apparatus includes a first state and a second state, where in the first state, adjacent two of the positioning members abut against each other, such that an accommodating space for accommodating a battery cell is formed between the adjacent two of the positioning members, and the cushion assembly is configured to abut against the battery cell and the positioning members. In the second state, the plurality of positioning members are spaced apart from each other in the first direction.

Abstract: According to the present disclosure, a measuring method of liquid mixture purity includes steps as follows. A storage tank is provided, wherein the storage tank is configured for storing a liquid mixture including formic acid and water. A calculating unit is provided, wherein a plurality of formic acid purity values are saved in the calculating unit. A pressure-decreasing and heating step is performed by reducing a pressure of the storage tank and heating the storage tank. A measuring step is performed by measuring in the inner space of the storage tank to obtain a pressure value, and measuring the liquid mixture simultaneously to obtain a temperature value. A calculating step is performed by inputting the pressure value and the temperature value into the calculating unit, wherein the calculating unit outputs one of the formic acid purity values corresponding thereto.

Abstract: In a method of patterning an integrated circuit, test layer thickness variation data is received when a test layer with a known thickness disposed over a test substrate undergoes tilted angle plasma etching. Overlay offset data per substrate locations caused by the tilted angle plasma etching is determined. The overlay offset data is determined based on the received thickness variation data. The overlay offset data is associated with an overlay between first circuit patterns of a first layer on the semiconductor substrate and corresponding second circuit patterns of a second layer disposed over the first layer on the substrate. A location of the substrate is adjusted based on the overlay offset data during a lithography operation to pattern a resist layer over the second layer. The second layer is patterned based on the projected layout patterns of the reticle and using the tilted angle plasma etching.

Abstract: The present invention relates to the field of air conditioners, and in particular to an air conditioner front panel control method and a front panel apparatus. A first air outlet and a front panel movably provided on the front end face are provided on the front end face of an air conditioner; when moving forward and backward relative to the front end face, the front panel forms, with the front end face, an air outlet channel communicated with the first air outlet, and the air outlet channel forms at least one second air outlet at the peripheral edge of the front panel. The front panel control method comprises the steps of: controlling a front panel to move and adjusting a spatial position thereof, so as to control an air inlet volume of the air outlet channel.