Patents by Inventor Sheng Te Yang
Sheng Te Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240138152Abstract: In accordance with embodiments, a memory array is formed with a multiple patterning process. In embodiments a first trench is formed within a multiple layer stack and a first conductive material is deposited into the first trench. After the depositing the first conductive material, a second trench is formed within the multiple layer stack, and a second conductive material is deposited into the second trench. The first conductive material and the second conductive material are etched.Type: ApplicationFiled: January 2, 2024Publication date: April 25, 2024Inventors: Feng-Cheng Yang, Meng-Han Lin, Sheng-Chen Wang, Han-Jong Chia, Chung-Te Lin
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Publication number: 20240090230Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.Type: ApplicationFiled: January 9, 2023Publication date: March 14, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Ling Lu, Chen-Jun Wu, Ya-Yun Cheng, Sheng-Chih Lai, Yi-Ching Liu, Yu-Ming Lin, Feng-Cheng Yang, Chung-Te Lin
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Publication number: 20240090336Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.Type: ApplicationFiled: November 17, 2023Publication date: March 14, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chang-Lin YANG, Chung-Te LIN, Sheng-Yuan CHANG, Han-Ting LIN, Chien-Hua HUANG
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Patent number: 9561465Abstract: An ecosystem operated in a plant having a drying unit is provided. The ecosystem includes: a regenerative thermal oxidization unit for processing a waste gas to produce a hot gas; a first hot gas pipeline connected to the regenerative thermal oxidization unit and the drying unit, wherein the hot gas is transferred from the regenerative thermal oxidization unit to the drying unit via the first hot gas pipeline; a heat recovery unit disposed at the first hot gas pipeline to absorb heat from the first hot gas pipeline; an absorption refrigeration unit connected to a target to be cooled; and a hot liquid pipeline connected to the heat recovery unit and the absorption refrigeration unit, wherein the heat recovery unit transfers heat from the first hot gas pipeline to the absorption refrigeration unit via the hot liquid pipeline to actuate the absorption refrigeration unit to cool the target.Type: GrantFiled: November 29, 2013Date of Patent: February 7, 2017Assignee: TSRC CorporationInventors: Jung Chang Lu, Cheng Hsien Lin, Sheng-Te Yang
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Publication number: 20150093297Abstract: An ecosystem operated in a plant having a drying unit is provided. The ecosystem includes: a regenerative thermal oxidization unit for processing a waste gas to produce a hot gas; a first hot gas pipeline connected to the regenerative thermal oxidization unit and the drying unit, wherein the hot gas is transferred from the regenerative thermal oxidization unit to the drying unit via the first hot gas pipeline; a heat recovery unit disposed at the first hot gas pipeline to absorb heat from the first hot gas pipeline; an absorption refrigeration unit connected to a target to be cooled; and a hot liquid pipeline connected to the heat recovery unit and the absorption refrigeration unit, wherein the heat recovery unit transfers heat from the first hot gas pipeline to the absorption refrigeration unit via the hot liquid pipeline to actuate the absorption refrigeration unit to cool the target.Type: ApplicationFiled: November 29, 2013Publication date: April 2, 2015Applicant: TSRC CorporationInventors: Jung Chang Lu, Cheng Hsien Lin, Sheng-Te Yang
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Patent number: 8058356Abstract: The present invention relates to a method for manufacturing a substantially hydrogenated vinyl aromatic/conjugated diene block copolymer, which has a hydrogenation level of greater than 90 percent. The resulting substantially hydrogenated vinyl aromatic/conjugated diene block copolymer has advantageous physical properties suitable for use in discs, optical films, light guide plates, etc.Type: GrantFiled: February 10, 2009Date of Patent: November 15, 2011Assignee: TSRC CorporationInventors: Huan-Chun Kao, Sheng-Te Yang, Hung-Chieh Hou, Chung-Ming Tsai
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Publication number: 20100168298Abstract: The present invention relates to a method for manufacturing a substantially hydrogenated vinyl aromatic/conjugated diene block copolymer, which has a hydrogenation level of greater than 90 percent. The resulting substantially hydrogenated vinyl aromatic/conjugated diene block copolymer has advantageous physical properties suitable for use in discs, optical films, light guide plates, etc.Type: ApplicationFiled: February 10, 2009Publication date: July 1, 2010Applicant: TSRC CORPORATIONInventors: Huan-Chun Kao, Sheng-Te Yang, Hung-Chieh Hou, Chung-Ming Tsai
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Publication number: 20080316694Abstract: A latching mechanism for being mounted between a housing and a cover of an electronic device includes a sliding member, a first latching portion, a second latching portion and an elastic member. The sliding member is slidably disposed on the cover and has a pushed portion located at a side of the cover. The first latching portion is fixed to the sliding element. The second latching portion is fixed to the housing and adapted for engaging with the first latching portion. The elastic member is disposed between the sliding member and the cover for providing an elastic force to the sliding member against the cover.Type: ApplicationFiled: February 22, 2008Publication date: December 25, 2008Applicant: COMPAL ELECTRONICS, INC.Inventors: Sheng-Te Yang, Chun-Ching Hsu, Kuo-Chun Ling, Chia-Wei Fu, Jen-Chieh Tsai, Yen-Chieh Chiu
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Patent number: 6498212Abstract: A polyester composition with improved hydrolytic stability is prepared by heating a molten mixture of: (A) a polyester resin; and (B) 0.05-10 wt %, based on the weight of the polyester resin, of a polymeric end-capping agent having an epoxy or amino functional group.Type: GrantFiled: March 14, 2000Date of Patent: December 24, 2002Assignee: Industrial Technology Research InstituteInventors: Hsin-Ching Kao, Lee-Hua Chen, Chi-Lang Wu, Jinn-Jong Wong, Szu-Yuan Chan, Sheng-Te Yang
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Patent number: 6376624Abstract: Compositions based on high viscosity, high molecular weight polyesters are prepared by heating a molten mixture of: (A) a prepolymer of a polyester resin; and (B) 0.05-10 wt %, based one the weight of the polyester prepolymer, of a multifunctional polymeric chain extender having functional groups selected from the group consisting of epoxy and isocyanate.Type: GrantFiled: April 6, 2000Date of Patent: April 23, 2002Assignee: Industrial Technology Research InstituteInventors: Hsin-Ching Kao, Lee-Hua Chen, Chi-Lang Wu, Jinn-Jong Wong, Szu-Yuan Chan, Sheng-Te Yang
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Patent number: 6239200Abstract: A composition suitable for use as a starting material for preparing a high molecular weight polyester through melt polymerization and solid state polymerization is disclosed. The composition comprises (a) a dicarboxylic acid or diester; (b) a glycol; (c) 0.1-5 mol %, relative to said component (a), of a multifunctional acid and/or a multifunctional alcohol; and (d) 0.05-5 wt %, based on the weight of the polyester, of a hindered phenolic aromatic phosphate. A process for preparing a high molecular weight polyester utilizing the above composition is also disclosed.Type: GrantFiled: March 14, 2000Date of Patent: May 29, 2001Assignee: Industrial Technology Research InstituteInventors: Hsin-Ching Kao, Lee-Hua Chen, Chi-Lang Wu, Jinn-Jong Wong, Szu-Yuan Chan, Sheng-Te Yang
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Patent number: 6211106Abstract: A catalyst composition for preparing high-syndiotacticity polystyrene polymers which comprises: (a) a titanium complex represented by the following formula of TiR′1R′2R′3R′4 or TiR′1R′2R′3, wherein R′1, R′2, R′3, and R′4 are, independently, an alkyl group, an aryl group, an alkoxy group, an aryloxy group, an amino group, a hydrogen atom, or a halogen atom; (b) a cyclopentadienyl complex represented by the following formula: wherein R1-R13 are, independently, alkyl group, aryl group, silyl group, halogen atom, or hydrogen atom; Ra and Rb are, independently, alkyl group, aryl group, alkoxy, aryloxy group, cyclopentadienyl group, hydrogen atom, or halogen atom; and Xa is a Group IIA element and Xb is a Group IIIA element.Type: GrantFiled: June 18, 1998Date of Patent: April 3, 2001Assignee: Industrial Technology Research InstituteInventors: Jing-Cherng Tsai, Yi-Chun Chen, Sheng Te Yang, Meei-Hwa Wang, Shian-Jy Wang
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Patent number: 5344964Abstract: A method for preparing ester end-capped polyalkylene ether is disclosed. Cyclic ether monomers are subjected to ring-opening polymerization at a temperature of 10.degree.-80.degree. C. and a pressure of 0-10 atm in the presence of a solid acid of a mixed oxide of group III and group IV elements serving as catalyst and a mixture of acid and acid anhydride serving as molecular weight moidifier. The group III and group IV elements used should have a Ho index of +3.0 to -10.0.Type: GrantFiled: November 24, 1993Date of Patent: September 6, 1994Assignee: Industrial Technology Research InstituteInventors: Shiao-Jung Chu, Fu-Chen Liu, Ching-Tang Lin, Wen-Fa Lin, Kuei-Chih Wang, Sheng-Te Yang