Abstract: A MOS circuit arrangement includes a silicon substrate, a semiconductor device, a field oxide layer, and a poly-protective layer. The silicon substrate has a conductive doping incorporated therein, wherein the semiconductor device is electrically connected with the silicon substrate. The field oxide layer is formed on the silicon substrate at a position spaced apart from the terminal of the semiconductor device to form an active region between the field oxide layer and the semiconductor device. The poly-protective layer deposited on the active region to communicate the field oxide layer with the terminal of the semiconductor device, wherein the poly-protective layer provides a junction breakdown path between the semiconductor device and the silicon substrate to increase a junction breakdown voltage of the semiconductor device.

Abstract: A sensor device has a field oxide layer deposited over a substrate. The field oxide layer has opposing sharp edges that define a window. A sensor is formed in the window with a distance between the sensor and each sharp edge that defines the window. The distance forms a gap that reduces the effects of the sharp edges on the sensor, thereby reducing the current leakage from the sensor. In addition, a protective layer may be disposed over the distance and the sharp edges of the field oxide layer to further protect the sharp edges from damage that may be caused from further processing.

Abstract: A contact image sensor is provided with a modified photodevice module and method of operation. The photodevice modules convert the video signals created by the sensed lights from an electrical charge to electrical voltage immediately upon stimulation of the photodevice, and hold the electrical voltage at another element in the photodevice module so that the voltage can be immediately output when the shift register output switch is turned on. A dark current elimination circuit is also provided and includes a light-shielded photodevice which produces a dark current reference signal representative of the expected dark current in the photodevices of the photodevice modules. This dark current reference signal is used to adjust the electrical charge created by the light stimulation of the photodevice.