Patents by Inventor Sheng-Tsung Hsu
Sheng-Tsung Hsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200274027Abstract: A light emitting diode and manufacturing method thereof are provided. The light emitting diode includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first current conducting layer is connected to the first-type semiconductor layer by the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapped with the first metal layer.Type: ApplicationFiled: February 17, 2020Publication date: August 27, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Yu-Chen Kuo, Sheng-Tsung Hsu, Chih-Ming Shen, Yao-Tang Li, Tung-Lin Chuang, Tsung-Syun Huang, Jing-En Huang
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Patent number: 10734551Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: GrantFiled: October 21, 2019Date of Patent: August 4, 2020Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Patent number: 10608144Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.Type: GrantFiled: May 9, 2018Date of Patent: March 31, 2020Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Chih-Ming Shen, Sheng-Tsung Hsu, Kuan-Chieh Huang, Jing-En Huang, Shao-Ying Ting
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Publication number: 20200052159Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: October 21, 2019Publication date: February 13, 2020Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Patent number: 10453999Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: GrantFiled: May 16, 2018Date of Patent: October 22, 2019Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20190214374Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.Type: ApplicationFiled: March 13, 2019Publication date: July 11, 2019Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Chih-Ming Shen, Sheng-Tsung Hsu, Kuan-Chieh Huang, Jing-En Huang
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Publication number: 20180337310Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.Type: ApplicationFiled: July 30, 2018Publication date: November 22, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting
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Publication number: 20180261727Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: May 16, 2018Publication date: September 13, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20180261729Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a barrier layer and a ductility layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The barrier layer is between the eutectic layer and the semiconductor epitaxial structure. The barrier layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The ductility layer is between the eutectic layer and the semiconductor epitaxial structure. The ductility layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.Type: ApplicationFiled: May 9, 2018Publication date: September 13, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Chih-Ming Shen, Sheng-Tsung Hsu, Kuan-Chieh Huang, Jing-En Huang, Shao-Ying Ting
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Patent number: 10038121Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.Type: GrantFiled: February 17, 2016Date of Patent: July 31, 2018Assignee: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting
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Publication number: 20180130926Abstract: An LED includes a first-type semiconductor layer, a light emitting layer, a second-type semiconductor layer, a first metal layer, a first current conducting layer, a first bonding layer, and a second current conducting layer. The light emitting layer is located between the first-type semiconductor layer and the second-type semiconductor layer. The first metal layer is located on the first-type semiconductor layer and electrically connected to the first-type semiconductor layer. The first metal layer is located between the first current conducting layer and the first-type semiconductor layer. The first current conducting layer is located between the first bonding layer and the first metal layer. The first bonding layer is electrically connected to the first-type semiconductor layer via the first current conducting layer and the first metal layer. The first bonding layer has through holes overlapping with the first metal layer.Type: ApplicationFiled: October 6, 2017Publication date: May 10, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Sheng-Tsung Hsu, Yu-Chen Kuo, Chih-Ming Shen, Tung-Lin Chuang, Tsung-Syun Huang, Jing-En Huang
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Publication number: 20180019232Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.Type: ApplicationFiled: September 25, 2017Publication date: January 18, 2018Applicant: Genesis Photonics Inc.Inventors: Yi-Ru Huang, Tung-Lin Chuang, Chih-Ming Shen, Sheng-Tsung Hsu, Kuan-Chieh Huang, Jing-En Huang
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Publication number: 20160329461Abstract: The invention provides an LED including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, a Bragg reflector structure, a conductive layer and insulation patterns. The first electrode and the second electrode are located on the same side of the Bragg reflector structure. The conductive layer is disposed between the Bragg reflector structure and the second-type semiconductor layer. The insulation patterns are disposed between the conductive layer and the second-type semiconductor layer. Each insulating layer has a first surface facing toward the second-type semiconductor layer, a second surface facing away from the second-type semiconductor layer, and an inclined surface. The inclined surface connects the first surface and the second surface and is inclined with respect to the first surface and the second surface.Type: ApplicationFiled: April 22, 2016Publication date: November 10, 2016Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting, Cheng-Pin Chen, Wei-Chen Chien, Chih-Chin Cheng, Chih-Hung Tseng
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Publication number: 20160247974Abstract: A light emitting diode including a first-type semiconductor layer, an emitting layer, a second-type semiconductor layer, a first electrode, a second electrode, and a Bragg reflector structure. The emitting layer is configured to emit a light beam and is located between the first-type semiconductor layer and the second-type semiconductor layer. The light beam has a peak wavelength in a light emitting wavelength range. The first-type semiconductor layer, the emitting layer, and the second-type semiconductor layer are located on a same side of the Bragg reflector structure. A reflectance of the Bragg reflector structure is greater than or equal to 95% in a reflective wavelength range at least covering 0.8X nm to 1.8X nm, and X is the peak wavelength of the light emitting wavelength range.Type: ApplicationFiled: February 17, 2016Publication date: August 25, 2016Inventors: Yi-Ru Huang, Tung-Lin Chuang, Yan-Ting Lan, Sheng-Tsung Hsu, Chih-Ming Shen, Jing-En Huang, Teng-Hsien Lai, Hung-Chuan Mai, Kuan-Chieh Huang, Shao-Ying Ting
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Publication number: 20160240732Abstract: A light emitting component includes an epitaxial structure, an adhesive layer, a first reflective layer, a second reflective layer, a block layer, a first electrode and a second electrode. The epitaxial structure includes a substrate, a first semiconductor layer, a light emitting layer and a second semiconductor layer. The adhesive layer is disposed on the second semiconductor layer of the epitaxial structure. The first reflective layer is disposed on the adhesive layer. The second reflective layer is disposed on the first reflective layer and extended onto the adhesive layer. A projection area of the second reflective layer is larger than a projection area of the first reflective layer. The block layer is disposed on the second reflective layer. The first electrode is electrically connected to the first semiconductor layer. The second electrode is electrically connected to the second semiconductor layer.Type: ApplicationFiled: February 17, 2016Publication date: August 18, 2016Inventors: Yi-Ru Huang, Tung-Lin Chuang, Chih-Ming Shen, Sheng-Tsung Hsu, Kuan-Chieh Huang, Jing-En Huang
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Publication number: 20160240758Abstract: Provided is a light emitting diode (LED) mounted on a carrier substrate and including a semiconductor epitaxial structure and at least one electrode pad structure. The semiconductor epitaxial structure is electrically connected to the carrier substrate. The electrode pad structure includes a eutectic layer, a blocking layer and an extension layer. The eutectic layer is adapted for eutectic bonding to the carrier substrate. The blocking layer is between the eutectic layer and the semiconductor epitaxial structure. The blocking layer blocks the diffusion of the material of the eutectic layer in the eutectic bonding process. The extension layer is between the eutectic layer and the semiconductor epitaxial structure. The extension layer reduces the stress on the LED produced by thermal expansion and contraction of the substrate during the eutectic bonding process, so as to prevent the electrode pad structure from cracking, and maintain the quality of the LED.Type: ApplicationFiled: February 17, 2016Publication date: August 18, 2016Inventors: Yi-Ru Huang, Tung-Lin Chuang, Chih-Ming Shen, Sheng-Tsung Hsu, Kuan-Chieh Huang, Jing-En Huang, Shao-Ying Ting