Patents by Inventor Sheng-Wen Su

Sheng-Wen Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Electronic device casing and electronic device
    Patent number: 10965016
    Abstract: An electronic device casing adapted to cover an antenna is provided. The electronic device casing includes a supporting layer and a carbon fiber layer. The carbon fiber layer is disposed on a surface of the supporting layer and includes a signal passing region having a plurality of slits and a plurality of microstructures separated by the slits. The signal passing region is adapted to cover the antenna, and a signal excited by the antenna is adapted to pass through the supporting layer and the slits so as to pass through the electronic device casing. An electronic device having the electronic device casing is further provided.
    Type: Grant
    Filed: June 13, 2019
    Date of Patent: March 30, 2021
    Assignee: HTC Corporation
    Inventors: Ying-Hao Yeh, Sheng-Wen Su
  • ELECTRONIC DEVICE CASING AND ELECTRONIC DEVICE
    Publication number: 20200028236
    Abstract: An electronic device casing adapted to cover an antenna is provided. The electronic device casing includes a supporting layer and a carbon fiber layer. The carbon fiber layer is disposed on a surface of the supporting layer and includes a signal passing region having a plurality of slits and a plurality of microstructures separated by the slits. The signal passing region is adapted to cover the antenna, and a signal excited by the antenna is adapted to pass through the supporting layer and the slits so as to pass through the electronic device casing. An electronic device having the electronic device casing is further provided.
    Type: Application
    Filed: June 13, 2019
    Publication date: January 23, 2020
    Applicant: HTC Corporation
    Inventors: Ying-Hao Yeh, Sheng-Wen Su
  • Semiconductor device and fabrication method thereof
    Patent number: 8076235
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Grant
    Filed: October 27, 2010
    Date of Patent: December 13, 2011
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou
  • Semiconductor Device and Fabrication Method Thereof
    Publication number: 20110039408
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Application
    Filed: October 27, 2010
    Publication date: February 17, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou
  • Semiconductor device and fabrication method thereof
    Patent number: 7846832
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Grant
    Filed: July 7, 2005
    Date of Patent: December 7, 2010
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou
  • Semiconductor device and fabrication method thereof
    Publication number: 20070010085
    Abstract: Semiconductor devices and methods for fabricating the same. The devices includes a substrate, a first etch stop layer, a dielectric layer, an opening, and an anti-diffusion layer. The first etch stop layer overlies the substrate. The dielectric layer overlies the first etch stop layer. The opening extends through the dielectric layer and the first etch stop layer, and exposes parts of the substrate. The anti-diffusion layer overlies at least sidewalls of the opening, preventing contamination molecule diffusion from at least the first etch stop layer, wherein the anti-diffusion layer is respectively denser than the first etch stop layer and the dielectric layer.
    Type: Application
    Filed: July 7, 2005
    Publication date: January 11, 2007
    Inventors: Kuan-Chi Tsai, Chih-Hsun Lin, Sheng-Wen Su, Shaw-Jang Liou