Patents by Inventor Sheng-Yi Hsiao
Sheng-Yi Hsiao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 12205855Abstract: The present disclosure relates to a method and an associated process tool. The method includes generating electromagnetic radiation that is directed toward a perimeter of a pair of bonded workpieces and toward a radiation sensor that is arranged behind the perimeter of the pair of bonded workpieces. The electromagnetic radiation is scanned along a vertical axis. An intensity of the electromagnetic radiation that impinges on the radiation sensor is measured throughout the scanning. Measuring the intensity includes recording a plurality of intensity values of the electromagnetic radiation at a plurality of different positions along the vertical axis extending past top and bottom surfaces of the pair of bonded workpieces. A position of an interface between the pair of bonded workpieces is determined based on a maximum measured intensity value of the plurality of intensity values.Type: GrantFiled: August 26, 2021Date of Patent: January 21, 2025Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hau-Yi Hsiao, Kuo-Ming Wu, Chun Liang Chen, Sheng-Chau Chen
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Publication number: 20240038892Abstract: A semiconductor device includes a transistor disposed in an active region. The transistor comprises a source/drain feature, a fin channel and a gate structure wrapping over the fin channel. The transistor also includes an insulation region disposed at an active edge. The active edge is at a boundary of the active region. The insulation region includes a trench. The trench has a tapered portion. A width of the tapered portion of the trench at a top of the fin channel is greater than a width of the tapered portion of the trench at a bottom of the gate structure.Type: ApplicationFiled: July 29, 2022Publication date: February 1, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Yi Tsai, Sheng-Yi Hsiao, Shu-Yuan Ku, Ryan Chia-Jen Chen
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Publication number: 20230402544Abstract: A FinFET includes a semiconductor substrate, a semiconductor fin, a gate structure, and an isolation structure. The semiconductor fin protrudes from the semiconductor substrate. The gate structure is disposed across a first segment of the semiconductor fin. The isolation structure interrupts a continuity of a second segment of the semiconductor fin. The isolation structure has a first portion and a second portion stacked on the first portion. Sidewalls of the first portion are inclined and sidewalls of the second portion are straight. A top surface of the first portion is coplanar with a top surface of the gate structure.Type: ApplicationFiled: June 13, 2022Publication date: December 14, 2023Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ya-Yi Tsai, Sheng-Yi Hsiao, Chao-Hsuan Chen, Yun-Ting Chiang, Shu-Yuan Ku
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Publication number: 20230402455Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a fin disposed over a semiconductor substrate, and the fin has a first width. The structure further includes an isolation region disposed around the fin, a gate electrode disposed over the fin and the isolation region, and a fill material disposed in the gate electrode. The fill material is in contact with a top surface of a portion of the semiconductor substrate, the top surface has at least a portion having a substantially flat cross-section, and the portion of the top surface has a second width substantially greater than the first width.Type: ApplicationFiled: January 15, 2023Publication date: December 14, 2023Inventors: Ya-Yi TSAI, Sheng-Yi Hsiao, Shu-Yuan KU, Ryan Chia-Jen CHEN, Tzu-Ging LIN, Jih-Jse LIN, Yih-Ann LIN
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Patent number: 10002716Abstract: Differing from conventional technology utilizing double-layer electron transport layer (ETL) to improving power conversion efficiency of perovskite solar cell, the present invention discloses a novel electron transport structure comprising an interfacial diploe moment enhancing layer, an electron transport layer and an interfacial layer. After applying this electron transport structure in a perovskite solar cell, it is found that an interfacial dipole moment formed between the electron transport layer of the electron transport structure and an active layer of the perovskite solar cell is amplified, so as to give rise to an enhanced driving force for the separation of photogenerated carriers and accelerating charge extraction.Type: GrantFiled: May 26, 2017Date of Patent: June 19, 2018Assignee: National Tsing Hua UniversityInventors: Hao-Wu Lin, Wei-Hung Lee, Sheng-Yi Hsiao
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Patent number: 9715102Abstract: This disclosure provides systems, methods, and apparatus for reducing tilt instability in an electromechanical systems (EMS) device, where the EMS device includes a plurality of hinges supporting a movable mirror over a stationary electrode and having identical hinge lengths. The EMS device can include a plurality of first anchor points providing connection at the substrate and a plurality of second anchor points providing connection at the movable mirror. Each of the hinges can be positioned between paired first and second anchor points and symmetrically arranged about the center of the movable mirror. In some implementations, the plurality of first anchor points and the plurality of second anchor points can be defined by a single mask.Type: GrantFiled: June 11, 2015Date of Patent: July 25, 2017Assignee: SnapTrack, Inc.Inventors: Bor-Shiun Lee, Hung-Yi Lin, Chih-Chun Lee, Sheng-Yi Hsiao
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Publication number: 20160363761Abstract: This disclosure provides systems, methods, and apparatus for reducing tilt instability in an electromechanical systems (EMS) device, where the EMS device includes a plurality of hinges supporting a movable mirror over a stationary electrode and having identical hinge lengths. The EMS device can include a plurality of first anchor points providing connection at the substrate and a plurality of second anchor points providing connection at the movable mirror. Each of the hinges can be positioned between paired first and second anchor points and symmetrically arranged about the center of the movable mirror. In some implementations, the plurality of first anchor points and the plurality of second anchor points can be defined by a single mask.Type: ApplicationFiled: June 11, 2015Publication date: December 15, 2016Inventors: Bor-Shiun Lee, Hung-Yi Lin, Chih-Chun Lee, Sheng-Yi Hsiao
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Publication number: 20160349497Abstract: This disclosure provides a display device that can achieve a neutral white color by combining a first tinted native white color produced by a first display element of the display device or a portion thereof with a second tinted native white color produced by a second display element of the display device or a portion of the first display element. The tint of the first tinted native white color and the second tinted native white color can be complementary to each other. The first tinted native white color and the second tinted native white color can be combined using spatial and/or temporal dithering.Type: ApplicationFiled: May 27, 2015Publication date: December 1, 2016Inventors: Jian Jim Ma, Shen-Ge Wang, Tallis Young Chang, John Hyunchul Hong, Chih-Chun Lee, Sheng-Yi Hsiao, Bor-shiun Lee, Hung-Yi Lin
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Patent number: 9431613Abstract: A method of fabricating a perovskite solar cell includes forming a hole transport layer on a transparent electrically conductive substrate, and forming a perovskite layer on the hole transport layer via a two-stage vacuum evaporation process. Then, an electron transport layer and an electrode layer are formed in order. The two-stage vacuum evaporation process includes first vacuum evaporating a first material on the hole transport layer and then vacuum evaporating a second material on the first material so as to react the first material with the second material in situ and form the perovskite layer.Type: GrantFiled: January 21, 2015Date of Patent: August 30, 2016Assignee: National Tsing Hua UniversityInventors: Hao-Wu Lin, Chang-Wen Chen, Hao-Wei Kang, Sheng-Yi Hsiao
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Publication number: 20160049585Abstract: A method of fabricating a perovskite solar cell includes forming a hole transport layer on a transparent electrically conductive substrate, and forming a perovskite layer on the hole transport layer via a two-stage vacuum evaporation process. Then, an electron transport layer and an electrode layer are formed in order. The two-stage vacuum evaporation process includes first vacuum evaporating a first material on the hole transport layer and then vacuum evaporating a second material on the first material so as to react the first material with the second material in situ and form the perovskite layer.Type: ApplicationFiled: January 21, 2015Publication date: February 18, 2016Inventors: Hao-Wu Lin, Chang-Wen Chen, Hao-Wei Kang, Sheng-Yi Hsiao
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Publication number: 20130256932Abstract: A method for preparing a hemisphere-shaped dosage form containing drug. A high molecular weight solution containing the drug is prepared, and the solution is then dropped onto a base material. The interface phenomenon between the solution and different base materials causes the solution to form a hemisphere-shaped liquid drop dosage. After solidifying by cross-link or evaporation, a hemisphere-shaped dosage form containing drug is obtained. The advantages of the preparation method are a simple and fast process, and simple operation. Applications of the preparation method to prepare a hemisphere-shaped dosage form containing drug are also provide.Type: ApplicationFiled: May 28, 2013Publication date: October 3, 2013Applicant: Instrument Technology Research Center, National Applied Research LaboratoriesInventors: Yung-Sheng LIN, Chun-Ting LIN, Keng-Shiang HUANG, Chih-Hui YANG, Sheng-Yi HSIAO, Chih-Cheng HUANG, Shih-Feng TSENG
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METHOD FOR PREPARING A MICRO-PARTICLE DRUG IN HEMISPHERE-SHAPED DOSAGE FORM AND APPLICATIONS THEREOF
Publication number: 20110256231Abstract: A method for preparing drug in hemisphere-shaped dosage form. A high molecular weight solution containing the drug is prepared, and the solution is then dropped on a base material. The interface phenomena between the solution and different base materials makes the drop of high molecular weight solution containing the drug form a hemisphere-shape. After solidifying by cross-link or evaporation, the drug in hemisphere-shaped dosage form is obtained. The advantages of the preparation method are a simple and fast process, and simple operation. Applications of the method to prepare a drug in hemisphere-shaped dosage form are also provided.Type: ApplicationFiled: April 20, 2010Publication date: October 20, 2011Inventors: Yung-Sheng Lin, Chun-Ting Lin, Keng-Shiang Huang, Chih-Hui Yang, Sheng-Yi Hsiao, Chih-Cheng Huang, Shih-Feng Tseng -
Patent number: 7981329Abstract: A method of manufacturing an optical component is provided. The method comprises steps of providing a first liquid; providing a fluid, disposed above the first liquid, wherein an interface exists between the first liquid and the fluid; providing a polymer precursor at the interface; and solidifying the polymer precursor so as to form the optical component made by a polymer.Type: GrantFiled: January 21, 2009Date of Patent: July 19, 2011Assignee: National Tsing Hua UniversityInventors: Chih-Chun Lee, Sheng-Yi Hsiao, Weileun Fang
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Publication number: 20090194892Abstract: A method of manufacturing an optical component is provided. The method comprises steps of providing a first liquid; providing a fluid, disposed above the first liquid, wherein an interface exists between the first liquid and the fluid; providing a polymer precursor at the interface; and solidifying the polymer precursor so as to form the optical component made by a polymer.Type: ApplicationFiled: January 21, 2009Publication date: August 6, 2009Applicant: NATIONAL TSING HUA UNIVERSITYInventors: Chih-Chun Lee, Sheng-Yi Hsiao, Weileun Fang