Patents by Inventor Sheng-Yi Su

Sheng-Yi Su has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD FOR FABRICATING INTERCONNECT OF SEMICONDUCTOR DEVICE
    Publication number: 20200168450
    Abstract: A method for fabricating interconnect of semiconductor device. The method includes providing a base substrate, having an inter-layer dielectric layer on top. A copper interconnect structure is formed in the inter-layer dielectric layer. A pre-sputter clean process is performed with hydrogen radicals on the copper interconnect structure. A degas process is sequentially performed on the copper interconnect structure. A cobalt cap layer is formed on the copper interconnect structure.
    Type: Application
    Filed: November 28, 2018
    Publication date: May 28, 2020
    Applicant: United Microelectronics Corp.
    Inventors: Ko-Wei Lin, Kuan-Hsiang Chen, Hsin-Fu Huang, Chun-Ling Lin, Sheng-Yi Su, Pei-Hsun Kao
  • Interconnect structure
    Patent number: 10446489
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Grant
    Filed: October 25, 2018
    Date of Patent: October 15, 2019
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su
  • INTERCONNECT STRUCTURE
    Publication number: 20190067184
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Application
    Filed: October 25, 2018
    Publication date: February 28, 2019
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su
  • Interconnect structure and fabrication method thereof
    Patent number: 10153231
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Grant
    Filed: March 22, 2017
    Date of Patent: December 11, 2018
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su
  • Method for forming copper material over substrate
    Patent number: 10079177
    Abstract: A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with H2 gas at a first pressure. The cobalt layer is treated with a H2 plasma at a second pressure. The second pressure is lower than the first pressure.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: September 18, 2018
    Assignee: United Microelectronics Corp.
    Inventors: Ko-Wei Lin, Ying-Lien Chen, Chun-Ling Lin, Huei-Ru Tsai, Hung-Miao Lin, Sheng-Yi Su, Tzu-Hao Liu
  • INTERCONNECT STRUCTURE AND FABRICATION METHOD THEREOF
    Publication number: 20180261537
    Abstract: An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.
    Type: Application
    Filed: March 22, 2017
    Publication date: September 13, 2018
    Inventors: Ko-Wei Lin, Hung-Miao Lin, Chun-Ling Lin, Ying-Lien Chen, Huei-Ru Tsai, Sheng-Yi Su