Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A method for manufacturing a memory device includes forming a first metal layer over a substrate, forming a magnetic tunnel junction (MTJ) layer stack over the first metal layer, forming a second metal layer over the MTJ layer stack, forming a hard mask layer over the second metal layer, performing a first etching process on the MTJ layer stack to form an MTJ structure and a redeposited layer on a sidewall of the MTJ structure, performing a second etching process to remove the redeposited layer, and performing a third etching process on the sidewall of the MTJ structure.

Abstract: Structures and formation methods of a semiconductor structure are provided. The semiconductor structure includes an insulating layer covering a device region and an alignment mark region of a semiconductor substrate. A conductive feature is formed in the insulating layer and corresponds to the device region. An alignment mark structure is formed in the first insulating layer and corresponds to the alignment mark region. The alignment mark structure includes a first conductive layer, a second conductive layer covering the first conductive layer, and a first magnetic tunnel junction (MTJ) stack layer covering the second conductive layer. The first conductive layer and the conductive feature are made of the same material.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Abstract: A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.

Abstract: An active network backup device includes at least a mainframe and a hardware. The mainframe and other network devices cannot log in, create settings and access data of the hardware. Hence, the hardware can practically prevent and block viruses, ransomware and attacks by hackers; moreover, the device has a physical security switch design for switching on and off a port to ensure personal operation of the administrator and prevent the hardware from being hacked by robot program. Most importantly, the hardware cannot execute destructive instructions and thereby viruses cannot be executed or run in the hardware, which also prevents accidental deletion due to setting errors, or any ransomware or malicious programs in the disguise of setting programs being downloaded and executed by careless users.

Abstract: Disclosed is a drinking water reminding system and the reminding method thereof. The water intake of user is measured by the operation of a reminder of the drinking water reminding system, and a collector of the drinking water reminding system is provided for adjusting the daily drinking water demand of user according to environmental parameters or the physiological parameters of user. The drinking water reminding system reminds the user to drink water if the drinking water reminding system determines that the user has taken insufficient water according to predetermined conditions and measurement results, drinking water reminding system.

Abstract: A high aspect ratio structure is provided. The high aspect ratio structure includes a substrate, a plurality of stack structures, and a plurality of support structures. The stack structures are disposed on the substrate, and a trench is formed between adjacent two stack structures. Each of the stack structures includes a plurality of first material layers and a plurality of second material layers. The second material layers and the first material layers are disposed alternately. The support structures are respectively disposed between the substrate and the stack structures, wherein each of the support structures has a concave-convex surface.

Abstract: Present example embodiments relate generally to methods for fabricating semiconductor devices comprising forming an initial stack of alternating insulative and conductive layers over a substrate, identifying a plurality of bit line locations and word line locations for the initial stack, including a first bit line location and a first word line location, and forming, from the initial stack, a vertical arrangement of bit lines in the first bit line location, the vertical arrangement of bit lines having opposing sidewalls. The method further comprises forming a word line by forming a thin conductive layer over selected sections of the opposing sidewalls, the selected sections of the opposing sidewalls being sections within the first word line location. The forming the word line further comprises depositing conductive material adjacent to each thin conductive layer, the deposited conductive material in direct contact with the thin conductive layer.

Abstract: A semiconductor stack includes a carbon doped/implanted stop layer that reacts with etching plasma to form polymers that maintain bottom etched critical dimension (ECD) and avoid excess recess depth when over-etching in high-aspect-ratio structures.

Abstract: A cloud management method of electronic devices is disclosed herein. The method comprises collecting at least one first information from a electronic device by an information collector comprising a safe power switch; calculating a temporary safe interruption value by the information collector via analyzing a predetermined number of times of a working current or voltage of the electronic device, or calculating a safe interruption value by a local server or a first server; and writing back the temporary safe interruption value or the safe interruption value to the safe power switch. Preferably, a power supply of the electronic device is cut off by the safe power switch in response to the working current or voltage surpassing the temporary safe interruption value or the safe interruption value.

Abstract: A firmware overwriting method for paired use wireless microphone and receiver is disclosed. The firmware update method comprises building a wireless connection between the at least one wireless microphone and the at least one receiver; and executing the determining program by the receiver processing module to determine if the installed wireless microphone matching backup firmware is the same as the wireless microphone firmware. If yes, the overwriting program is not executed. If no, the receiver processing module sends a command to the wireless microphone processing module to download the installed wireless microphone matching backup firmware from the receiver storage module, and the overwriting program is executed by the wireless microphone processing module to overwrite the wireless microphone firmware with the installed wireless microphone matching backup firmware.

Abstract: A firmware overwriting method for paired use wireless microphone and receiver is disclosed. The firmware update method comprises building a wireless connection between the at least one wireless microphone and the at least one receiver; and executing the determining program by the receiver processing module to determine if the installed wireless microphone compatible backup firmware is the same as the wireless microphone firmware. If yes, the overwriting program is not executed. If no, the receiver processing module sends a command to the wireless microphone processing module to download the installed wireless microphone compatible backup firmware from the receiver storage module, and the overwriting program is executed by the wireless microphone processing module to overwrite the wireless microphone firmware with the installed wireless microphone compatible backup firmware.

Abstract: A bidirectional microphone system is disclosed, including a base station, a wireless microphone and an external control device. A bidirectional wireless communication may be performed between the wireless microphone and the base station. The external control device is connected to the wireless microphone for controlling the wireless microphone via at least one push button on the external control device. The external control device is also provided with light-emitting elements to show the function or status of the wireless microphone. The wireless microphone is provided with a global positioning system or a G-sensor for locating the coordinates of the wireless microphone under different situations. When the wireless microphone is in an emergency and located beyond the wireless communication range, the wireless microphone emits a high-power pulsed radio frequency signal for antenna of the base station to locate the position of the wireless microphone.

Abstract: A cloud management method of electronic devices is disclosed herein. The method comprises collecting at least one first information from a electronic device by an information collector comprising a safe power switch; calculating a temporary safe interruption value by the information collector via analyzing a predetermined number of times of a working current or voltage of the electronic device, or calculating a safe interruption value by a local server or a first server; and writing back the temporary safe interruption value or the safe interruption value to the safe power switch. Preferably, a power supply of the electronic device is cut off by the safe power switch in response to the working current or voltage surpassing the temporary safe interruption value or the safe interruption value.

Abstract: Disclosed is a drinking water reminding system and the reminding method thereof. The water intake of user is measured by the operation of a reminder of the drinking water reminding system, and a collector of the drinking water reminding system is provided for adjusting the daily drinking water demand of user according to environmental parameters or the physiological parameters of user. The drinking water reminding system reminds the user to drink water if the drinking water reminding system determines that the user has taken insufficient water according to predetermined conditions and measurement results, drinking water reminding system.