Abstract: A reticle includes a reticle body having a first surface, a pattern disposed on the first surface of the reticle body, and at least a protection layer disposed on the first surface of the reticle body. The protection layer is in contact with the first surface of the reticle body.

Abstract: The method of forming the photo resist feature comprises forming a photo resist layer on the substrate, providing a photo mask comprises the main feature and the assistant feature, providing the exposure process to form the photo resist main feature and the photo resist assistant feature correspondingly and providing the trimming process to remove the photo resist assistant feature and trim the photo resist main feature. The method reduces OPE and larges the process window.

Abstract: A method for reducing critical dimension is provided. An exposure process and a develop process are performed on a photoresist layer. An optical trim exposure process is performed between the exposure process and the development process or before the exposure process. The optical trim expsoure process is performed to expose the photoresit layer by using a fully open mask of which the transmission rate is greater than zero. Because of the performance of the optical trim exposure process, the critical dimension of the photoresist layer can be reduced without substantially changing the characteristics of the photoresist layer.

Abstract: A method for forming a photoresist pattern is described. A photoresist layer is first formed over a substrate, and then an exposure process and a development process are performed to pattern the photoresist layer so as to form a patterned photoresist layer. Next, a multiple-trimming process is performed to trim the patterned photoresist lay to form a photoresist pattern. The multiple-trimming process includes at least one step of alkaline solution treatment and/or at least one step of neutral solution treatment. The method is applicable for improving properties of smoothness of the surface, and uniformity and minification of critical dimensions of the photoresist patterns.

Abstract: A photo-sensitive material layer is formed over a semiconductor substrate. The photo-sensitive material layer is exposed to a first radiation having a maximum intensity at a first wavelength to form a first latent pattern in the photo-sensitive material layer. The photo-sensitive material layer is then exposed to a second radiation having a maximum intensity at a second wavelength to form a second latent pattern in the photo-sensitive material layer. The first latent pattern and the second latent pattern in the photo-sensitive material layer are then simultaneously removed.

Abstract: The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E0 value of the resist can be decreased.

Abstract: The present invention relates to a polymer with at least one pericyclic protective group such as 2-methyl-2-bicyclo[2,2,1]heptanyl. The resist composition containing the polymer can be used as a chemically amplified resist and exhibits strong etch resistance. In addition, a line-and-space pattern of 0.1 &mgr;m pitch can be resolved successfully using the resist composition.

Abstract: A substrate is provided. A first dielectric layer is formed over the substrate by deposition. Etching stop layer and a second dielectric layer are formed in turn over the first dielectric. Next, the second dielectric layer is dealt with Lewis acid. Then, a first photoresist layer is defined and formed over the second dielectric layer. And then dry etching is carried out by means of the first photoresist layer as the mask to form a via hole. The surface of the second dielectric layer and the via hole are treated with Lewis acid. Subsequently, the second photoresist layer is defined and formed on the second dielectric layer. Dry etching is proceed, and etching stop layer is as a etching terminal point to remove exposed partial surface of the second dielectric layer so as to form a trench having larger horizontal size than the via hole. Subsequently, the second photoresist layer is removed to form the opening of the damascene.

Abstract: The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E0 value of the resist can be decreased.

Abstract: The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur, —CH2—, and —SiH2—, wherein each R1 is independently selected from C1-20 alkyl and phenyl.

Abstract: The present invention provides a ring-opened polymer, which is prepared by reacting at least one pericyclic olefin elected from those represented by formulae (I) and (II) through ring-opening metathesis polymerization wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur,  —CH2—, and —SiH2—, wherein each R1 is independently selected from C1-20 alkyl and phenyl; each R is independently selected from hydrogen, halogen, and C1-20 alkyl; and each n is an integer from 1 to 6

Abstract: The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II) wherein A and B may be the same or different and are independently selected from the group consisting of halogen, hydrogen, C3-20 cyclic or pericyclic alkyl, C1-20 linear and branched alkyl, C6-20 aryl, C7-20 arylalkyl, C7-20 alkylaryl, silyl, alkylsilyl, germyl, alkylgermyl, alkoxycarbonyl, acyl, and a heterocylic group; or, A and B are linked together to form a C3-20 saturated or unsaturated cyclic hydrocarbon group or a substituted or unsubstituted heterocyclic group; C is selected from the group consisting of oxygen, sulfur, wherein each R1 is independently selected from C1-20 alkyl and phenyl.