Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first transistor, a first resistive random access memory (RRAM) resistor, and a second RRAM resistor. The first resistor includes a first resistive material layer, a first electrode shared by the second resistor, and a second electrode. The second resistor includes the first electrode, a second resistive material layer, and a third electrode. The first electrode is electrically coupled to the first transistor.

Abstract: Disclosed herein are related to an integrated circuit including a semiconductor layer. In one aspect, the semiconductor layer includes a first region, a second region, and a third region. The first region may include a circuit array, and the second region may include a set of interface circuits to operate the circuit array. A side of the first region may face a first side of the second region along a first direction. The third region may include a set of header circuits to provide power to the set of interface circuits through metal rails extending along a second direction. A side of the third region may face a second side of the second region along the second direction. In one aspect, the first side extending along the second direction is shorter than the second side extending along the first direction, and the metal rails are shorter than the first side.

Abstract: The present disclosure describes a method for forming a semiconductor device having a work function metal layer doped with tantalum to mitigate oxygen diffusion and improve device threshold voltage. The method includes forming a gate dielectric layer on a channel structure and forming a work function metal layer on the gate dielectric layer. The gate dielectric layer includes an interfacial layer on the channel structure and a high-k dielectric layer on the interfacial layer. The method further includes doping the work function metal layer and the gate dielectric layer with tantalum.

Abstract: The present invention provides compositions and methods for simultaneously detecting mRNA expression levels of hormonal receptors, particularly both estrogen receptor (ER) and progesterone receptor (PR), optionally in combination with growth factor receptors, particularly epidermal growth factor receptor ERBB2 (Her-2), and further optionally in combination with control genes, such as the housekeeping genes NUP214 and/or PPIG. Exemplary embodiments of the invention are useful for determining hormonal receptor and/or growth factor receptor status, particular both ER and PR status and optionally also ERBB2 status, such as for assessing or treating breast cancer.

Abstract: The present invention relates to the identification of prognostic markers useful in determining the response of hepatitis c virus (HCV) infected patients to interferon alpha (IFN-?) treatment. The studies provide biomarkers that can be used to discern sustained responders and non-responders of IFN-? treatment. This information should enable treating physicians to help patients to make more informed decisions.

Abstract: Method of obtaining N-terminal methionine-free proteins are described. The methods employ a novel enzyme, E. coli methionine aminopeptidase either in vitro or in vivo. For in vivo application, plasmid-borne DNA encoding the peptidase is transformed into a bacterial host which produces the desired protein.

Abstract: Methods of obtaining N-terminal methionine-free proteins are described. The methods employ a novel enzyme, E. coli methionine aminopeptidase either in vitro or in vivo. For in vivo application, plasmid-borne DNA encoding the peptidase is transformed into a bacterial host which produces the desired protein.

Abstract: Methods for obtaining N-terminal methionine-free proteins involve a novel E. coli methionine amino peptidase. The method is capable of in vitro or in vivo application. For in vivo application, a plasmid-borne DNA encoding the peptide is expressed in a bacterial host.